Data Sheet BTS650P
Infineon Technologies AG Page 1of 16 2003-Oct-01
Smart Highside High Current Power Switch Reversave
Features
• Overload protection
• Current limitation
• Short circuit protection
• Over temperature protection
• Over voltage protection (including load dump)
• Clamp of negative voltage at output
• Fast deenergizing of inductive loads 1)
• Low ohmic inverse current operation
• Reversave (Reverse battery protection)
• Diagnostic feedback with load current sense
• Open load detection via current sense
• Loss of Vbb protection 2)
• Electrostatic discharge (ESD) protection
Application
• Power switch with current sense diagnostic
feedback for 12 V and 24 V DC grounded loads
• Most suitable for loads with high inrush current
like lamps and motors; all types of resistive and
inductive loads
• Replaces electromechanical relays, fuses and
discrete circuits
General Description
N channel vertical power FET with charge pump, current controlled input and diagnostic feedback with load
current sense, integrated in Smart SIPMOS chip on chip technology. Providing embedded protective functions.
IN
Charge pump
Level shifter
Rectifier
Limit for
unclamped
ind. loads
Gate
protection
Current
limit
3
Overvoltage
protection
+ Vbb
PROFET
OUT
4 & Tab
1,2,6,7
Load GND
Load
Output
Voltage
detection
RIS
IS
5
IIS
IL
VIS
IIN
Logic GND
Voltage
sensor
Voltage
source
Current
Sense
Logic
ESD
Temperature
sensor
Rbb
VIN
1) With additional external diode.
2) Additional external diode required for energized inductive loads (see page 9).
Product Summary
Overvoltage protection Vbb(AZ) 62 V
Output clamp VON(CL) 42 V
Operating voltage Vbb(on) 5.0 ... 34 V
On-state resistance RON 6.0 mΩ
Load current (ISO) IL(ISO) 70 A
Short circuit current limitation IL(SC) 130 A
Current sense ratio I
L : IIS 14 000
TO-220-7
1
7
Standard
1
7
SMD
Data Sheet BTS650P
Infineon Technologies AG Page 2 2003-Oct-01
Pin Symbol Function
1 OUT O
Output; output to the load; pin 1, 2, 6 and 7 must be externally shorted with
each other especially in high current applications. 3)
2 OUT O Output; output to the load; pin 1, 2, 6 and 7 must be externally shorted with
each other especially in high current applications. 3)
3 IN I Input; has an internal pull up; activates the power switch in case of short to
ground
4 Vbb + Supply voltage; positive power supply voltage; tab and pin 4 are internally
shorted; in high current applications use the tab 4).
5 IS S
Sense Output; Diagnostic feedback; provides a sense current proportional
to the load current; zero current on failure (see Truth Table on page 7)
6 OUT O
Output; output to the load; pin 1, 2, 6 and 7 must be externally shorted with
each other especially in high current applications. 3)
7 OUT O
Output; output to the load; pin 1, 2, 6 and 7 must be externally shorted with
each other especially in high current applications. 3)
Maximum Ratings at Tj = 25 °C unless otherwise specified
Parameter Symbol Values Unit
Supply voltage (over voltage protection see page 4) Vbb 42 V
Supply voltage for short circuit protection,
Tj,start =-40 ...+150°C: (see diagram on page 10) Vbb 34 V
Load current (short circuit current, see page 5) IL self-limited A
Load dump protection VLoadDump = VA + Vs, VA = 13.5 V
RI5) = 2 Ω, RL = 0.54 Ω, td = 200 ms,
IN, IS = open or grounded
VLoad dum p6) 75 V
Operating temperature range
Storage temperature range Tj
Tstg -40 ...+150
-55 ...+150 °C
Power dissipation (DC), TC ≤ 25 °C Ptot 170 W
Inductive load switch-off energy dissipation, single pulse
Vbb = 12V, Tj,start = 150°C, TC = 150°C const.,
IL = 20 A, ZL = 7.5 mH, 0 Ω, see diagrams on page 10
EAS 1.5 J
Electrostatic discharge capability (ESD)
Human Body Model acc. MIL-STD883D, method 3015.7 and ESD
assn. std. S5.1-1993, C = 100 pF, R = 1.5 kΩ
VESD 4kV
Current through input pin (DC)
Current through current sense status pin (DC)
see internal circuit diagrams on page 8 and 9
IIN
IIS +15 , -250
+15 , -250 mA
3) Not shorting all outputs will considerably increase the on-state resistance, reduce the peak current capability
and decrease the current sense accuracy
4) Otherwise add up to 0.7 mΩ (depending on used length of the pin) to the RON if the pin is used instead of the
tab.
5) RI = internal resistance of the load dump test pulse generator.
6) VLoad dump is setup without the DUT connected to the generator per ISO 7637-1 and DIN 40839.
Data Sheet BTS650P
Infineon Technologies AG Page 3 2003-Oct-01
Thermal Characteristics
Parameter and Conditions Symbol Values Unit
min typ max
Thermal re sistance chip - case: RthJC 7) -- -- 0.75 K/W
junction - ambient (free air): RthJA -- 60 --
SMD version, device on PCB 8): -- 33 40
Electrical Characteristics
Parameter and Conditions Symbol Values Unit
at Tj = -40 ... +150 °C, Vbb = 12 V unless otherwise specified min typ max
Load Switching Capabilities and Characteristics
On-state resistance (Tab to pins 1,2,6,7, see
measurement circuit page 7) IL = 20 A, Tj = 25 °C:
VIN = 0, IL = 20 A, Tj = 150 °C:
RON
--
4.4
7.9 6.0
10.5 mΩ
IL = 90 A, Tj = 150 °C: -- 10.7
Vbb = 6V 9), IL = 20 A, Tj = 150 °C: RON(Static) -- 10 17
Nominal load current 10) (Tab to pins 1, 2, 6, 7)
ISO 10483-1/6.7: VON = 0.5 V, Tc = 85 °C 11) IL(ISO) 55 70 -- A
Nominal load current 10), device on PCB 8)
TA = 85 °C, Tj ≤ 150 °C VON ≤ 0.5 V,
IL(NOM)
13.6
17 -- A
Maximum load current in resistive range
(Tab to pins 1, 2, 6, 7) VON = 1.8 V, Tc = 25 °C:
see diagram on page 13 VON = 1.8 V, Tc = 150 °C:
IL(Max)
250
150
--
--
--
-- A
Turn-on time12) IIN to 90% VOUT:
Turn-off time IIN to 10% VOUT:
RL = 1 Ω , Tj =-40...+150°C
ton
toff 100
30 --
-- 420
110 µs
Slew rate on 12) (10 to 30% VOUT )
RL = 1 Ω , TJ = 25 °C dV/dton -- 0.7 -- V/µs
Slew rate off 12) (70 to 40% VOUT )
RL = 1 Ω , TJ = 25 °C -dV/dtoff -- 1.1 -- V/µs
7) Thermal resistance RthCH case to heatsink (about 0.5 ... 0.9 K/W with silicone paste) not included!
8) Device on 50mm*50mm*1.5mm epoxy PCB FR4 with 6cm2 (one layer, 70µm thick) copper area for Vbb
connection. PCB is vertical without blown air.
9) Decrease of Vbb below 10 V causes slowly a dynamic increase of RON to a higher value of RON(Static). As
long as VbIN > VbIN(u) max, RON increase is less than 10 % per second for TJ < 85 °C.
10) not subject to production test, specified by design
11) TJ is about 105°C under these conditions.
12) See timing diagram on page 14.
Data Sheet BTS650P
Infineon Technologies AG Page 4 2003-Oct-01
Parameter and Conditions Symbol Values Unit
at Tj = -40 ... +150 °C, Vbb = 12 V unless otherwise specified min typ max
Inverse Load Current Operation
On-state resistance (Pins 1, 2, 6, 7 to pin 4)
VbIN = 12 V, IL = - 20 A Tj = 25 °C:
see diagram on page 10 Tj = 150 °C:
RON(inv)
--
4.4
7.9 6.0
10.5 mΩ
Nominal inverse load current (Pins 1, 2, 6, 7 to Tab)
VON = -0.5 V, Tc = 85 °C11 IL(inv) 55 70 -- A
Drain-source diode voltage (Vout > Vbb)
IL = - 20 A, IIN = 0, Tj = +150°C -VON -- 0.6 -- V
Operating Parameters
Operating voltage (VIN = 0V) 13) Vbb(on) 5.0 -- 34 V
Under voltage shutdown 14) VbIN(u) 1.5 3.0 4.5 V
Under voltage start of charge pump
see diagram page 15
VbIN(ucp)
3.0
4.5 6.0 V
Over voltage protection 15) Tj =-40°C:
Ibb = 15 mA Tj = 25...+150°C: VZ,IN 60
62 --
66
--
-- V
Standby current Tj =-40...+25°C:
IIN = 0 T
j = 150°C: Ibb(off) --
-- 15
25 25
50 µA
13) If the device is turned on before a Vbb-decrease, the operating voltage range is extended down to VbIN(u).
For all voltages 0 ... 34 V the device is fully protected against overtemperature and short circuit.
14) VbIN = Vbb - VIN see diagram on page 7. When VbIN increases from less than VbIN(u) up to VbIN(ucp) = 5 V
(typ.) the charge pump is not active and VOUT ≈Vbb - 3 V.
15) See also VON(CL) in circuit diagram on page 9.
Data Sheet BTS650P
Infineon Technologies AG Page 5 2003-Oct-01
Parameter and Conditions Symbol Values Unit
at Tj = -40 ... +150 °C, Vbb = 12 V unless otherwise specified min typ max
Protection Functions 16)
Short circuit current limit (Tab to pins 1, 2, 6, 7)
VON = 12 V, time until shutdown max. 350 µs Tc =-40°C:
Tc =25°C:
Tc =+150°C:
IL(SC)
IL(SC)
IL(SC)
--
--
65
110
130
115
--
180
--
A
Short circuit shutdown delay after input current
positive slope, VON > VON(SC)
min. value valid only if input "off-signal" time exceeds 30 µs
td(SC)
80
-- 350 µs
Output clamp 17) IL= 40 mA:
(inductive load switch off)
see diagram Ind. and overvolt. output clamp page 8
-VOUT(CL) 14
16.5
20 V
Output clamp (inductive load switch off)
at VOUT = Vbb - VON(CL) (e.g. over voltage)
IL= 40 mA
VON(CL)
39
42 47 V
Short circuit shutdown detection voltage
(pin 4 to pins 1,2,6,7)
VON(SC)
--
6 -- V
Thermal overload trip temperature Tjt 150 -- -- °C
Thermal hysteresis
∆
Tjt -- 10 -- K
Reverse Battery
Reverse battery voltage 18) -Vbb -- -- 16 V
On-state resistance (Pins 1 ,2 ,6 ,7 to pin 4) Tj = 25 °C:
Vbb = -12V, VIN = 0, IL = - 20 A, RIS = 1 kΩ Tj = 150 °C: RON(rev) -- 5.4
8.9 7.0
12.3 mΩ
Integrated resistor in Vbb line Rbb -- 120 -- Ω
16) Integrated protection functions are designed to prevent IC destruction under fault conditions described in the
data sheet. Fault conditions are considered as “outside” normal operating range. Protection functions are not
designed for continuous repetitive operation.
17) This output clamp can be "switched off" by using an additional diode at the IS-Pin (see page 8). If the diode
is used, VOUT is clamped to Vbb- VON(CL) at inductive load switch off.
18) The reverse load current through the intrinsic drain-source diode has to be limited by the connected load (as
it is done with all polarity symmetric loads). Note that under off-conditions (IIN = IIS = 0) the power transistor
is not activated. This results in raised power dissipation due to the higher voltage drop across the intrinsic
drain-source diode. The temperature protection is not active during reverse current operation! Increasing
reverse battery voltage capability is simply possible as described on page 9.
Data Sheet BTS650P
Infineon Technologies AG Page 6 2003-Oct-01
Parameter and Conditions Symbol Values Unit
at Tj = -40 ... +150 °C, Vbb = 12 V unless otherwise specified min typ max
Diagnostic Characteristics
Current sense ratio, IL = 90 A,Tj =-40°C:
static on-condition, Tj =25°C:
kILIS = IL : IIS, Tj =150°C:
VON < 1.5 V 19), IL = 20 A,Tj =-40°C:
VIS <VOUT - 5V, Tj =25°C:
VbIN > 4.0 V Tj =150°C:
see diagram on page 12 IL = 10 A,Tj =-40°C:
Tj =25°C:
Tj =150°C:
IL = 4 A,Tj =-40°C:
Tj =25°C:
Tj =150°C:
kILIS 12 500
12 500
11 500
12 500
12 000
11 500
12 500
11 500
11 500
11 000
11 000
11 200
14 200
13 700
13 000
14 500
14 000
13 400
15 000
14 300
13 500
18 000
15 400
14 000
16 000
16 000
14 500
17 500
16 500
15 000
19 000
17 500
15 500
28 500
22 000
19 000
IIS=0 by IIN =0 (e.g. during deenergizing of inductive loads):
Sense current saturation IIS,lim 6.5 -- -- mA
Current sense leakage current IIN = 0:
V
IN = 0, IL ≤ 0:
IIS(LL)
IIS(LH) --
-- --
2
0.5
65 µA
Current sense over voltage protection Tj =-40°C:
Ibb = 15 mA Tj = 25...+150°C: VZ,IS 60
62 --
66
--
-- V
Current sense settling time 20) ts(IS) -- -- 500 µs
Input
Input and operating current (see diagram page 13)
IN grounded (VIN = 0) IIN(on) -- 0.8 1.5 mA
Input current for turn-off 21) IIN(off) -- -- 80 µA
19) If VON is higher, the sense current is no longer proportional to the load current due to sense current
saturation, see IIS,lim .
20) not subject to production test, specified by design
21) We recommend the resistance between IN and GND to be less than 0.5 kΩ for turn-on and more than
500kΩ for turn-off. Consider that when the device is switched off (IIN = 0) the voltage between IN and GND
reaches almost Vbb.
Data Sheet BTS650P
Infineon Technologies AG Page 7 2003-Oct-01
Truth Table
Input
current Output Current
Sense Remark
level level IIS
Normal
operation L
H L
H 0
nominal
=IL / kilis, up to IIS=IIS,lim
Very high
load current H H IIS, lim up to VON=VON(Fold back)
IIS no longer proportional to IL
Current-
limitation H H 0 VON > VON(Fold back)
if VON>VON(SC), shutdown will occur
Short circuit to
GND L
H L
L 0
0
Over
temperature L
H L
L 0
0
Short circuit to
Vbb L
H H
H 0
<nominal 22)
Open load L
H Z23)
H 0
0
Negative output
voltage clamp L L 0
Inverse load
current L
H H
H 0
0
L = "Low" Level; H = "High" Level
Over temperature reset by cooling: Tj < Tjt (see diagram on page 15)
Short circuit to GND: Shutdown remains latched until next reset via input (see diagram on page 14)
22) Low ohmic short to Vbb may reduce the output current IL and can thus be detected via the sense current IIS.
23) Power Transistor "OFF", potential defined by external impedance.
Terms
PROFET
V
IN
IS
OUT
bb
VIN IIS
IIN
Vbb
Ibb
IL
VOUT
VON
3
5
4
1,2,6,7
RIS
VIS
VbIN
RIN
DS
VbIS
Two or more devices can easily be connected in
parallel to increase load current capability.
RON measurement layout
Sense
V force Out Force
bb
contacts contacts
(both out
pins parallel)
l ≤
5.5mm
Typical RON for SMD version is about 0.2 mΩ less
than straight leads due to l ≈ 2 mm
Data Sheet BTS650P
Infineon Technologies AG Page 8 2003-Oct-01
Input circuit (ESD protection)
IN
ZD
IN
I
Vbb
Rbb
VZ,IN
VbIN
VIN
When the device is switched off (IIN = 0) the voltage
between IN and GND reaches almost Vbb. Use a
mechanical switch, a bipolar or MOS transistor with
appropriate breakdown voltage as driver.
VZ,IN = 66 V (typ).
Short circuit detection
Fault Condition: VON > VON(SC) (6 V typ.) and t> td(SC)
(80 ...350 µs).
Short circuit
detection
Logic
unit
+ Vbb
OUT
VON
Current sense status output
IS
IS
R
IS
I
ZD
IS
V
bb
V
bb
R
Z,IS
V
VZ,IS = 66 V (typ.), RIS = 1 kΩ nominal (or 1 kΩ /n, if n
devices are connected in parallel). IS = IL/kilis can be
driven only by the internal circuit as long as Vout - VIS >
5 V. If you want measure load currents up to IL(M), RIS
should be less than Vbb - 5 V
IL(M) / Kilis.
Note: For large values of RIS the voltage VIS can reach
almost Vbb. See also over voltage protection.
If you don't use the current sense output in your
application, you can leave it open.
Inductive and over voltage output clamp
+ Vbb
OUT
PROFET
VZ1
VON
DS
IS VOUT
VZG
VON is clamped to VON(Cl) = 42 V typ. At inductive load
switch-off without DS, VOUT is clamped to VOUT(CL) =
-19 V typ. via VZG. With DS, VOUT is clamped to Vbb -
VON(CL) via VZ1. Using DS gives faster deenergizing of
the inductive load, but higher peak power dissipation in
the PROFET. In case of a floating ground with a
potential higher than 19V referring to the OUT –
potential the device will switch on, if diode DS is not
used.
Data Sheet BTS650P
Infineon Technologies AG Page 9 2003-Oct-01
Over voltage protection of logic part
+ Vbb
VOUT
IN
bb
R
Signal GND
Logic
PROFET
VZ,IS
RIS
IN
R
IS
VZ,IN
RVVZ,VIS
Rbb = 120 Ω typ., VZ,IN = VZ,IS = 66 V typ., RIS = 1 kΩ
nominal. Note that when over voltage exceeds 71 V typ.
a voltage above 5V can occur between IS and GND, if
RV, VZ,VIS are not used.
Reverse battery protection
Logic
IS
IN
IS
RV
R
OUT
L
R
Power GND
Signal GND
Vbb
-
Power
Transistor
IN
R
bb
R
D
S
D
RV ≥ 1 kΩ, RIS = 1 kΩ nominal. Add RIN for reverse
battery protection in applications with Vbb above
16 V18); recommended value:
1
RIN + 1
RIS + 1
RV = 0.1A
|Vbb| - 12V if DS is not used (or
1
RIN = 0.1A
|Vbb| - 12V if DS is used).
To minimize power dissipation at reverse battery
operation, the summarized current into the IN and IS
pin should be about 120mA. The current can be
provided by using a small signal diode D in parallel to
the input switch, by using a MOSFET input switch or by
proper adjusting the current through RIS and RV.
Vbb disconnect with energized inductive
load
Provide a current path with load current capability by
using a diode, a Z-diode, or a varistor. (VZL < 72 V or
VZb < 30 V if RIN=0). For higher clamp voltages
currents at IN and IS have to be limited to 250 mA.
Version a:
PROFET
V
IN OUT
IS
bb
Vbb
VZL
Version b:
PROFET
V
IN OUT
IS
bb
Vbb
VZb
Note that there is no reverse battery protection when
using a diode without additional Z-diode VZL, VZb.
Version c: Sometimes a necessary voltage clamp is
given by non inductive loads RL connected to the same
switch and eliminates the need of clamping circuit:
PROFET
V
IN OUT
IS
bb
Vbb RL
Data Sheet BTS650P
Infineon Technologies AG Page 10 2003-Oct-01
Inverse load current operation
PROFET
V
IN OUT
IS
bb
Vbb
VOUT
- IL
RIS
VIS
VIN
+
-+
-
IIS
The device is specified for inverse load current
operation (VOUT > Vbb > 0V). The current sense feature
is not available during this kind of operation (IIS = 0).
With IIN = 0 (e.g. input open) only the intrinsic drain
source diode is conducting resulting in considerably
increased power dissipation. If the device is switched
on (VIN = 0), this power dissipation is decreased to the
much lower value RON(INV) * I2 (specifications see page
4).
Note: Temperature protection during inverse load
current operation is not possible!
Inductive load switch-off energy
dissipation
PROFET
V
IN OUT
IS
bb
E
E
E
EAS
bb
L
R
ELoad
L
R
L
{
Z
L
R
IS
I
IN
V
bb
i (t)
L
Energy stored in load inductance:
EL = 1/2·L·I2
L
While demagnetizing load inductance, the energy
dissipated in PROFET is
EAS= Ebb + EL - ER= VON(CL)·iL(t) dt,
with an approximate solution for RL > 0 Ω:
EAS= IL· L
2·RL(Vbb + |VOUT(CL)|) ln (1+ IL·RL
|VOUT(CL)| )
Maximum allowable load inductance for
a single switch off
L = f (IL ); Tj,start = 150°C, Vbb = 12 V, RL = 0 Ω
L [µH]
I
L [A]
Externally adjustable current limit
If the device is conducting, the sense current can be
used to reduce the short circuit current and allow
higher lead inductance (see diagram above). The
device will be turned off, if the threshold voltage of T2
is reached by IS*RIS . After a delay time defined by
RV*CV T1 will be reset. The device is turned on again,
the short circuit current is defined by IL(SC) and the
device is shut down after td(SC) with latch function.
PROFET
IS
IN
IS
R
V
R
Powe
r
GND
Signal
GND
Vbb
OUT
V
C
load
R
T1 T2
IN
Signal
Vbb
1
10
100
1000
10000
100000
1000000
1
A
10 A 100 A 1000 A
Data Sheet BTS650P
Infineon Technologies AG Page 11 2003-Oct-01
Options Overview
Type BTS
6510 550P
650P 555
Over temperatur e protection w ith hysteresi s X X X
Tj >150 °C, latch function24)
Tj >150 °C, with auto-restart on cooling
X
X X
Short circuit to GND protection
with over temperature shutdown
switches off when VON>6 V typ.
(when first turned on after approx. 180 µs)
X
X
X
Over voltage shutdown - - -
Output negative voltage transient limit
to Vbb - VON(CL) X X X
to VOUT = -19 V typ X25) X25) X25)
24) Latch except when Vbb -VOUT < VON(SC) after shutdown. In most cases VOUT = 0 V after shutdown (VOUT ≠
0 V only if forced externally). So the device remains latched unless Vbb < VON(SC) (see page 5). No latch
between turn on and td(SC).
25) Can be "switched off" by using a diode DS (see page 8) or leaving open the current sense output.
Data Sheet BTS650P
Infineon Technologies AG Page 12 2003-Oct-01
Characteristics
Current sense versus load current:
IIS = f(IL), TJ= -40 ... +150 °C
IIS [mA]
I
L [A]
Current sense ratio:
KILIS = f(IL),TJ = -40°C
kilis
I
L [A]
Current sense ratio:
IIS = f(IL), TJ= 25 °C
kILIS
I
L [A]
Current sense ratio:
KILIS = f(IL),TJ = 150°C
kilis
I
L [A]
10000
12000
14000
16000
18000
20000
22000
0 20406080
max
typ
min
10000
12000
14000
16000
18000
20000
22000
0 20406080
max
typ
min
0
1
2
3
4
5
6
7
0 20406080
max
min
10000
12000
14000
16000
18000
20000
22000
24000
26000
28000
30000
0 20406080
max
typ
min
Data Sheet BTS650P
Infineon Technologies AG Page 13 2003-Oct-01
Typ. current limitation characteristic
IL = f (VON, Tj )
IL [A]
V
ON [V]
In case of VON > VON(SC) (typ. 6 V) the device will be
switched off by internal short circuit detection.
Typ. on-state resistance
RON = f (Vbb, Tj ); IL = 20 A; VIN = 0
RON [mOhm]
0
2
4
6
8
10
12
14
0 5 10 15
static
dynamic
T
j
= 150°C
85°C
25°C
-40°C
40
Vbb [V]
Typ. input current
IIN = f (VbIN), VbIN = Vbb - VIN
IIN [mA]
VbIN [V]
0
50
100
150
200
250
300
350
400
450
0 5 10 15 20
VON > VON(SC) only for t < td(SC)
(otherwise i m m edi ate shutdown)
TJ = 25°C
TJ = - 40°C TJ = 150°C
VON(FB) 0
0.2
0.4
0.6
0.8
1.0
1.2
1.4
1.6
020406080
Data Sheet BTS650P
Infineon Technologies AG Page 14 2003-Oct-01
Timing diagrams
Figure 1a: Switching a resistive load,
change of load current in on-condition:
IIN
t
VOUT
IL
IIS tson(IS)
tt
slc(IS)
Load 1 Load 2
soff(IS)
t
t
t
on
off
slc(IS)
90%
dV/dton
dV/dtoff
10%
The sense signal is not valid during a settling time
after turn-on/off and after change of load current.
Figure 2b: Switching motors and lamps:
IIN
t
VOUT
IIL
IIS
Sense current saturation can occur at very high
inrush currents (se e IIS,lim on page 6).
Figure 2c: Switching an inductive load:
IIN
t
VOUT
IL
IIS
Figure 3d: Short circuit:
shut down by short circuit detection, reset by IIN = 0.
IIN
IL
IL(SCp)
IIS
t
td(SC)
VOUT=0
VOUT>>0
Shut down remains latched until next reset via input.
Data Sheet BTS650P
Infineon Technologies AG Page 15 2003-Oct-01
Figure 4e: Over temperature
Reset if Tj<Tjt
IIN
t
IIS
VOUT
Tj
Auto Restart
Figure 6f: Under voltage restart of charge pump,
over voltage clamp
0
2
4
6
0
VOUT
VbIN(ucp)
VIN = 0
IIN = 0
VON(CL)
VbIN(u)
V
bIN(u)
dynamic, short
Undervoltage
not below
VON(CL)
Data Sheet BTS650P
Infineon Technologies AG Page 16 2003-Oct-01
Package and Ordering Code
All dimensions in mm
Standard: TO-220-7-3 Ordering code
BTS650P Q67060-S6308-A002
SMD: TO220-7-180 Ordering code
BTS650P E3180A T&R: Q67060-S6308-A004
Footprint:
9.4
0.47
0.8
8.42
4.6
16.15
10.8
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Infineon Technologies AG,
St.-Martin-Strasse 53,
D-81669 München
© Infineon Technologies AG 2001
All Rights Reserved.
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descriptions and charts stated herein.
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