BUH51 - ON Semiconductor

March, 2006 − Rev. 5

1Publication Order Number:

BUH51/D

BUH51

SWITCHMODEt NPN Silicon

Planar Power Transistor

The BUH51 has an application specific state−of−art die designed for

use in 50 W Halogen electronic transformers.

This power transistor is specifically designed to sustain the large

inrush current during either the startup conditions or under a short

circuit across the load.

•Improved Efficiency Due to the Low Base Drive Requirements:

High and Flat DC Current Gain hFE

Fast Switching

•Epoxy Meets UL 94 V−0 @ 0.125 in

•ESD Ratings:

Machine Model, C

Human Body Model, 3B

wThis device is available in Pb−free package(s). Specifications herein

apply to both standard and Pb−free devices. Please see our website at

www.onsemi.com for specific Pb−free orderable part numbers, or

contact your local ON Semiconductor sales office or representative.

MAXIMUM RATINGS

Rating Symbol Value Unit

Collector−Emitter Sustaining Voltage VCEO 500 Vdc

Collector−Base Breakdown Voltage VCBO 800 Vdc

Collector−Emitter Breakdown Voltage VCES 800 Vdc

Emitter−Base Voltage VEBO 10 Vdc

Collector Current −Continuous

−Peak (Note 1)

ICM

3.0

8.0

Adc

Base Current − Continuous

Base Current − Peak (Note 1)

IBM

2.0

4.0

Adc

*Total Device Dissipation @ TC = 25_C

*Derate above 25°C

PD50

0.4

Watt

W/_C

Operating and Storage Temperature TJ, Tstg –65 to

150

THERMAL CHARACTERISTICS

Thermal Resistance, Junction−to−Case RθJC 2.5 _C/W

Thermal Resistance, Junction−to−Ambient RθJA 100 _C/W

Maximum Lead Temperature for Soldering

Purposes: 1/8″ from case for 5 seconds

TL260 _C

Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings

are stress ratings only. Functional operation above the Recommended Operating

Conditions is not implied. Extended exposure to stresses above the Recommended

Operating Conditions may affect device reliability.

1. Pulse Test: Pulse Width = 5 ms, Duty Cycle ≤ 10%.

Device Package Shipping

ORDERING INFORMATION

BUH51 TO−225

TO−225

CASE 77

STYLE 3

500 Units/Box

MARKING DIAGRAM

YWW

BUH51

Y = Year

WW = Work Week

1 BASE

2 COLLECTOR

3 EMITTER

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POWER TRANSISTOR

3.0 AMPERE

800 VOLTS

50 WATTS

BUH51

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ELECTRICAL CHARACTERISTICS (TC = 25°C unless otherwise noted)

Characteristic Symbol Min Typ Max Unit

OFF CHARACTERISTICS

Collector−Emitter Sustaining Voltage

(IC = 100 mA, L = 25 mH)

VCEO(sus) 500 550 −Vdc

Collector−Base Breakdown Voltage

(ICBO = 1.0 mA)

VCBO 800 950 −Vdc

Emitter−Base Breakdown Voltage

(IEBO = 1.0 mA)

VEBO 10 12.5 −Vdc

Collector Cutoff Current

(VCE = Rated VCEO, IB = 0

ICEO − − 100 mAdc

Collector Cutoff Current

(VCE = Rated VCES, VEB = 0)

@ TC = 25°C

@ TC = 125°C

ICES −

−

100

1000

mAdc

Collector Base Current

(VCB = Rated VCBO, VEB = 0

@ TC = 25°C

@ TC = 125°C

ICBO −

−

100

1000

mAdc

Emitter−Cutoff Current

(VEB = 9.0 Vdc, IC = 0)

IEBO − − 100 mAdc

ON CHARACTERISTICS

Base−Emitter Saturation Voltage

(IC = 1.0 Adc, IB = 0.2 Adc)

@ TC = 25°C

@ TC = 125°C

VBE(sat) −

−

0.92

0.8

1.1

−

Vdc

Collector−Emitter Saturation Voltage

(IC = 1.0 Adc, IB = 0.2 Adc)

@ TC = 25°C

@ TC = 125°C

VCE(sat) −

−

0.3

0.32

0.5

0.6

Vdc

DC Current Gain (IC = 1.0 Adc, VCE = 1.0 Vdc) @ TC = 25°C

@ TC = 125°C

hFE 8.0

6.0

8.0

−

DC Current Gain (IC = 2.0 Adc, VCE = 5.0 Vdc) @ TC = 25°C

@ TC = 125°C

5.0

4.0

7.5

6.2

−

DC Current Gain (IC = 0.8 Adc, VCE = 5.0 Vdc) @ TC = 25°C

@ TC = 125°C

8.0

−

DC Current Gain (IC = 10 mAdc, VCE = 5.0 Vdc) @ TC = 25°C

@ TC = 125°C

−

DYNAMIC SATURATION VOLTAGE

Dynamic Saturation

Voltage:

Determined 3.0 ms

after rising IB1 reaches

90% of final IB1

IC = 1.0 Adc, IB1 = 0.2 Adc

VCC = 300 V

@ TC = 25°CVCE(dsat) −1.7 −V

@ TC = 125°C−6.0 −V

IC = 2.0 Adc, IB1 = 0.4 Adc

VCC = 300 V

@ TC = 25°C−5.1 −V

@ TC = 125°C−15 −V

DYNAMIC CHARACTERISTICS

Current Gain Bandwidth

(IC = 1.0 Adc, VCE = 10 Vdc, f = 1.0 MHz)

fT−23 −MHz

Output Capacitance

(VCB = 10 Vdc, IE = 0, f = 1.0 MHz)

Cob −34 100 pF

Input Capacitance

(VEB = 8.0 Vdc, f = 1.0 MHz)

Cib −200 500 pF

BUH51

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ELECTRICAL CHARACTERISTICS (TC = 25°C unless otherwise noted)

Characteristic Symbol Min Typ Max Unit

SWITCHING CHARACTERISTICS: Resistive Load (D.C. ≤ 10%, Pulse Width = 40 ms)

Turn−on Time

IC = 1.0 Adc, IB1 = 0.2 Adc

IB2 = 0.2 Adc

VCC = 300 Vdc

@ TC = 25°C

@ TC = 125°C

ton −

−

110

125

150

−

Turn−off Time @ TC = 25°C

@ TC = 125°C

toff −

−

3.5

4.1

4.0

−

Turn−on Time

IC = 2.0 Adc, IB1 = 0.4 Adc

IB2 = 0.4 Adc

VCC = 300 Vdc

@ TC = 25°C

@ TC = 125°C

ton −

−

700

1250

1000

−

Turn−off Time @ TC = 25°C

@ TC = 125°C

toff −

−

1.75

2.1

2.0

−

SWITCHING CHARACTERISTICS: Inductive Load (Vclamp = 300 V, VCC = 15 V, L = 200 mH)

Fall Time

IC = 1.0 Adc

IB1 = 0.2 Adc

IB2 = 0.2 Adc

@ TC = 25°C

@ TC = 125°C

tfi −

−

200

320

300

−

Storage Time @ TC = 25°C

@ TC = 125°C

tsi −

−

3.4

4.0

3.75

−

Crossover Time @ TC = 25°C

@ TC = 125°C

tc−

−

350

640

500

−

Fall Time

IC = 2.0 Adc

IB1 = 0.4 Adc

IB2 = 0.4 Adc

@ TC = 25°C

@ TC = 125°C

tfi −

−

140

300

200

−

Storage Time @ TC = 25°C

@ TC = 125°C

tsi −

−

2.3

2.8

2.75

−

Crossover Time @ TC = 25°C

@ TC = 125°C

tc−

−

400

725

600

−

TYPICAL STATIC CHARACTERISTICS

Figure 1. DC Current Gain @ 1.0 V

100

1010.10.001

IC, COLLECTOR CURRENT (AMPS)

hFE, DC CURRENT GAIN

TJ = 125°C

TJ = 25°C

TJ = −20°C

VCE = 1 V

Figure 2. DC Current Gain @ 3.0 V

100

1010.10.001

IC, COLLECTOR CURRENT (AMPS)

hFE, DC CURRENT GAIN

TJ = 125°C

TJ = 25°C

TJ = −20°C

VCE = 3 V

0.010.01

BUH51

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TYPICAL STATIC CHARACTERISTICS

Figure 3. DC Current Gain @ 5.0 V Figure 4. Collector−Emitter Saturation Voltage

0.01

1010.10.001

IC, COLLECTOR CURRENT (AMPS)

TJ = 125°C

TJ = 25°C

TJ = −20°C

IC/IB = 5

VCE, VOLTAGE (VOLTS)

Figure 5. Collector−Emitter Saturation Voltage

0.1

100.10.001

IC, COLLECTOR CURRENT (AMPS)

Figure 6. Base−Emitter Saturation Region

1.5

0.5

100.10.001

IC, COLLECTOR CURRENT (AMPS)

TJ = 125°C

TJ = 25°C

TJ = −20°C

VCE, VOLTAGE (VOLTS)

VBE , VOLTAGE (VOLTS)

TJ = 125°C

TJ = 25°C

TJ = −20°C

0.1

IC/IB = 10

IC/IB = 5

Figure 7. Base−Emitter Saturation Region

1.5

0.5

1010.10.001

IC, COLLECTOR CURRENT (AMPS)

VBE , VOLTAGE (VOLTS)

TJ = 125°C

TJ = 25°C

TJ = −20°C

Figure 8. Collector Saturation Region

0.5

1010.01

IB, BASE CURRENT (A)

1.5

100

1010.10.001

IC, COLLECTOR CURRENT (AMPS)

hFE, DC CURRENT GAIN

TJ = 125°C

TJ = 25°C

TJ = −20°C

VCE = 5 V

0.01 0.01

0.01

IC/IB = 10

VCE, VOLTAGE (VOLTS)

0.1

TJ = 25°C

VCE(sat)

(IC = 500 mA)

1 A

4 A

2 A

3 A

BUH51

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t, TIME (s)μ

TYPICAL STATIC CHARACTERISTICS

Figure 9. Capacitance

1000

100101

VR, REVERSE VOLTAGE (VOLTS)

C, CAPACITANCE (pF)

100

Cib

TJ = 25°C

f(test) = 1 MHz

Cob

Figure 10. Resistive Breakdown

700

400

10000010010

RBE (Ω)

BVCER (VOLTS)

TJ = 25°C

BVCER @ 10 mA

1000

900

800

600

500 BVCER(sus) @ 200 mA, 25 mH

100001000

TYPICAL SWITCHING CHARACTERISTICS

Figure 11. Resistive Switching, ton

2500

1000

310

IC, COLLECTOR CURRENT (AMPS)

1500

500

TJ = 125°C

TJ = 25°C

IB1 = IB2

VCC = 300 V

PW = 40 μs

Figure 12. Resistive Switch Time, toff

310

IC, COLLECTOR CURRENT (AMPS)

Figure 13. Inductive Storage Time, tsi

310

IC, COLLECTOR CURRENT (AMPS)

2TJ = 125°C

TJ = 25°C

IC/IB = 5

TJ = 125°C

TJ = 25°C

Figure 13 Bis. Inductive Storage Time, tsi

21.50.5

IC, COLLECTOR CURRENT (AMPS)

TJ = 125°C

TJ = 25°C

2000

IC/IB = 5

t, TIME (ns)

IB1 = IB2

VCC = 300 V

PW = 40 μs

t, TIME (s)μ

IB1 = IB2

VCC = 15 V

VZ = 300 V

LC = 200 μH3

IB1 = IB2

VCC = 15 V

VZ = 300 V

LC = 200 μH

IC/IB = 10

BUH51

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TYPICAL SWITCHING CHARACTERISTICS

Figure 14. Inductive Storage Time,

tc & tfi @ IC/IB = 5

1000

400

2.510.5

IC, COLLECTOR CURRENT (AMPS)

800

200

1.5

TJ = 125°C

TJ = 25°C

Figure 15. Inductive Storage Time,

tc & tfi @ IC/IB = 10

800

2.51.50.5

IC, COLLECTOR CURRENT (AMPS)

t, TIME (ns)

200

TJ = 125°C

TJ = 25°C

IB1 = IB2

VCC = 15 V

VZ = 300 V

LC = 200 μH

tfi

600

400

t, TIME (ns)

600

IB1 = IB2

VCC = 15 V

VZ = 300 V

LC = 200 μHtc

tfi

1042

hFE, FORCED GAIN

TJ = 125°C

TJ = 25°C

Figure 16. Inductive Storage Time

IB1 = IB2

VCC = 15 V

VZ = 300 V

LC = 200 μH

Figure 17. Inductive Fall Time

450

103

hFE, FORCED GAIN

350

tfi, FALL TIME (ns)

400

250

150

467

TJ = 125°C

TJ = 25°C

300

200

100

, STORAGE TIME (tsi μs)

IC = 2 A

IC = 0.8 A

589

IBoff = IB2

VCC = 15 V

VZ = 300 V

LC = 200 μH

IC = 2 A

IC = 0.8 A

Figure 18. Inductive Crossover Time

800

300

100

hFE, FORCED GAIN

600

tc, CROSSOVER TIME (ns)

700

400

500

200

1034 6 7589

IB1 = IB2

VCC = 15 V

VZ = 300 V

LC = 200 μH

TJ = 125°C

TJ = 25°CIC = 2 A

IC = 0.8 A

tfi

BUH51

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TYPICAL SWITCHING CHARACTERISTICS

Figure 19. Dynamic Saturation Voltage

Measurements

Figure 20. Inductive Switching Measurements

Table 1. Inductive Load Switching Drive Circuit

V(BR)CEO(sus)

L = 10 mH

RB2 = ∞

VCC = 20 Volts

IC(pk) = 100 mA

Inductive Switching

L = 200 μH

RB2 = 0

VCC = 15 Volts

RB1 selected for

desired IB1

RBSOA

L = 500 μH

RB2 = 0

VCC = 15 Volts

RB1 selected for

desired IB1

+15 V

1 μF150 Ω

3 W

100 Ω

3 W

MPF930

+10 V

50 Ω

COMMON

−Voff

500 μF

MPF930

MTP8P10

MUR105

MJE210

MTP12N10

MTP8P10

150 Ω

3 W

100 μF

Iout

RB1

RB2

1 μF

IC PEAK

VCE PEAK

VCE

IB1

IB2

TIME

VCE

0 V

90% IB

1 μs

3 μs

dyn 1 μs

dyn 3 μs

0820

TIME

1357

Vclamp tc

tfi

90% IC

10% IC

90% IB1

10% Vclamp

tsi

BUH51

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TYPICAL THERMAL RESPONSE

Figure 21. Forward Bias Power Derating

016010020

TC, CASE TEMPERATURE (°C)

0.8

POWER DERATING FACTOR

0.6

0.4

0.2

60 140

SECOND BREAKDOWN

DERATING

40 80 120

THERMAL DERATING

There are two limitations on the power handling ability of

a transistor: average junction temperature and second

breakdown. Safe operating area curves indicate IC−VCE

limits of the transistor that must be observed for reliable

operation; i.e., the transistor must not be subjected to greater

dissipation than the curves indicate. The data of Figure 22 is

based on TC = 25°C; TJ(pk) is variable depending on power

level. Second breakdown pulse limits are valid for duty

cycles to 10% but must be derated when TC > 25°C. Second

breakdown limitations do not derate the same as thermal

limitations. Allowable current at the voltages shown on

Figure 22 may be found at any case temperature by using the

appropriate curve on Figure 21.

TJ(pk) may be calculated from the data in Figure 24. At any

case temperatures, thermal limitations will reduce the power

that can be handled to values less than the limitations

imposed by second breakdown. For inductive loads, high

voltage and current must be sustained simultaneously during

turn−off with the base to emitter junction reverse biased. The

safe level is specified as a reverse biased safe operating area

(Figure 23). This rating is verified under clamped conditions

so that the device is never subjected to an avalanche mode.

Figure 22. Forward Bias Safe Operating Area

100

0.01

100010

VCE, COLLECTOR−EMITTER VOLTAGE (VOLTS)

Figure 23. Reverse Bias Safe Operating Area

900200

VCE, COLLECTOR−EMITTER VOLTAGE (VOLTS)

100 500

0.1

IC, COLLECTOR CURRENT (AMPS)

DC 5 ms

1 ms 10 μs

1 μs3

GAIN ≥ 4

−1.5 V

−5 V

TC ≤ 125°C

LC = 500 μH

300 400 700600 800

EXTENDED

SOA

0 V

BUH51

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TYPICAL THERMAL RESPONSE

Figure 24. Typical Thermal Response (ZθJC(t)) for BUH51

0.01

100.10.01

t, TIME (ms)

0.1

1 100 1000

r(t), TRANSIENT THERMAL RESISTANCE

(NORMALIZED)

RθJC(t) = r(t) RθJC

RθJC = 2.5°C/W MAX

D CURVES APPLY FOR POWER

PULSE TRAIN SHOWN

READ TIME AT t1

TJ(pk) − TC = P(pk) RθJC(t)

P(pk)

DUTY CYCLE, D = t1/t2

0.05

SINGLE PULSE

0.5

0.2

0.1

0.02

BUH51

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PACKAGE DIMENSIONS

TO−225

CASE 77−09

ISSUE Z

NOTES:

1. DIMENSIONING AND TOLERANCING PER ANSI

Y14.5M, 1982.

2. CONTROLLING DIMENSION: INCH.

3. 077−01 THRU −08 OBSOLETE, NEW STANDARD

077−09.

−B−

−A−M

132

2 PL

0.25 (0.010) B M

DIM MIN MAX MIN MAX

MILLIMETERSINCHES

A0.425 0.435 10.80 11.04

B0.295 0.305 7.50 7.74

C0.095 0.105 2.42 2.66

D0.020 0.026 0.51 0.66

F0.115 0.130 2.93 3.30

G0.094 BSC 2.39 BSC

H0.050 0.095 1.27 2.41

J0.015 0.025 0.39 0.63

K0.575 0.655 14.61 16.63

M5 TYP 5 TYP

Q0.148 0.158 3.76 4.01

R0.045 0.065 1.15 1.65

S0.025 0.035 0.64 0.88

U0.145 0.155 3.69 3.93

V0.040 −−− 1.02 −−−

STYLE 3:

PIN 1. BASE

2. COLLECTOR

3. EMITTER

ON Semiconductor and are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice

to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability

arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages.

“Typical” parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All

operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. SCILLC does not convey any license under its patent rights

nor the rights of others. SCILLC products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications

intended to support or sustain life, or for any other application in which the failure of the SCILLC product could create a situation where personal injury or death may occur. Should

Buyer purchase or use SCILLC products for any such unintended or unauthorized application, Buyer shall indemnify and hold SCILLC and its officers, employees, subsidiaries, affiliates,

and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death

associated with such unintended or unauthorized use, even if such claim alleges that SCILLC was negligent regarding the design or manufacture of the part. SCILLC is an Equal

Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner.

PUBLICATION ORDERING INFORMATION

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Phone: 81−3−5773−3850

BUH51/D

SWITCHMODE is a trademark of Semiconductor Components Industries, LLC (SCILLC).

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