inters;| Data Sheet 60A, 600V, UFS Series N-Channel IGBT with Anti-Parallel Hyperfast Diode The HGTG30N60B3D is a MOS gated high voltage switching device combining the best features of MOSFETs and bipolar transistors. This device has the high input impedance of a MOSFET and the low on-state conduction loss of a bipolar transistor. The much lower on-state voltage drop varies only moderately between 25C and 150C. The IGBT used is the development type TA49170. The diode used in anti-parallel with the IGBT is the development type TA49053. The IGBT is ideal for many high voltage switching applications operating at moderate frequencies where low conduction losses are essential, such as: AC and DC motor controls, power supplies and drivers for solenoids, relays and contactors. Formerly Developmental Type TA49172. Ordering Information PART NUMBER PACKAGE BRAND HGTG30N60B3D TO-247 G30N60B3D NOTE: When ordering, use the entire part number. HGTG30N60B3D January 2000 File Number 4446.2 Features * 60A, 600V, Tc = 25C * 600V Switching SOA Capability * Typical Fall Time................. 90ns at Ty = 150C * Short Circuit Rating * Low Conduction Loss * Hyperfast Anti-Parallel Diode Packaging JEDEC STYLE TO-247 INTERSIL CORPORATION IGBT PRODUCT IS COVERED BY ONE OR MORE OF THE FOLLOWING U.S. PATENTS 4,364,073 4,417,385 4,430,792 4,443,931 4,466,176 4,516,143 4,532,534 4,587,713 4,598,461 4,605,948 4,620,211 4,631 ,564 4,639,754 4,639,762 4,641,162 4,644,637 4,682,195 4,684,413 4,694,313 4,717,679 4,743,952 4,783,690 4,794,432 4,801 ,986 4,803,533 4,809,045 4,809,047 4,810,665 4,823,176 4,837,606 4,860,080 4,883,767 4,888,627 4,890,143 4,901,127 4,904,609 4,933,740 4,963,951 4,969,027 1 CAUTION: These devices are sensitive to electrostatic discharge; follow proper ESD Handling Procedures. 4-888-INTERSIL or 321-724-7143 | Copyright Intersil Corporation 2000HGTG30N60B3D Absolute Maximum Ratings T = 25C, Unless Otherwise Specitied HGTG30N60B3D UNITS Collector to Emitter Voliage 0.2... eee BVcEsS 600 Vv Collector Current Continuous ALT = 25C one ened nnn lca5 60 A AtTC = 110C nnn eee een nena lc110 30 A Average Diode Forward Current at 110C... cee lEC(AVG) 25 A Collector Current Pulsed (Note 1)... 0... eee lom 220 A Gate to Emitter Voltage Continuous... 2... eee VGES +20 Vv Gate to Emitter Voltage Pulsed ....... 0... 00s VGEM +30 Vv Switching Safe Operating Area at Ty = 150C (Figure 2) ...................008. SSOA 60A at 600V Power Dissipation Total at To = 25C 20 n eee ee Pp 208 WwW Power Dissipation Derating To > 25C 00 eect n nes 1.67 w/c Operating and Storage Junction Temperature Range.....................00. Ty, Tsta -55 to 150 C Maximum Lead Temperature for Soldering ... 2... .. 0.0.00. eee TL 260 C Short Circuit Withstand Time (Note 2) at Vqp=12V......0000000 0000 eee tsc 4 ps Short Circuit Withstand Time (Note 2) at Vqe = 10V......0000000 00000. eee tsc 10 ps CAUTION: Siresses above those listed in Absolute Maximum Ratings may cause permanent damage to the device. This is a stress only rating and operation of the device at these or any other conditions above those indicated in the operational sections of this specification is not implied. NOTES: 1. Pulse width limited by maximum junction temperature. 2. VCE(PK) = 360V, Ty = 125C, Rg = 30. Electrical Specifications T,> = 25C, Unless Otherwise Specified PARAMETER SYMBOL TEST CONDITIONS MIN TYP MAX UNITS Collector to Emitter Breakdown Voltage BVcES Io = 250HA, Vor = OV 600 - - v Collector to Emitter Leakage Current IcES Voce = BYces To = 25C - - 250 pA To = 150C - - 3 mA Collector to Emitter Saturation Voltage VcEsat) |'c='cr1t0: To = 25C - 1.45 1.9 VoeE = 15V 0 Te = 150C - 1.7 2.1 Gate to Emitter Threshold Voltage VGE(TH) Io = 250A, Vee = VaE 3 5 6 Gate to Emitter Leakage Current IGEs Vag = +20V - - +250 nA Switching SOA SSOA Ty = 150C, Re = 32, | Voce (PK) = 480V 200 - - Vag = 15V L = 100LH VcE (PK) = 600V 60 - - Gate to Emitter Plateau Voltage VGEP lo =Io110: Voc = 0.5 BVcES - 7.2 - On-State Gate Charge Qaon) Ic =Ileti0: VaE = 15V - 170 190 nG VceE = 0.5 BV, CE CES Ve = 20V - 230 250 nc Current Turn-On Delay Time ta(ON)! IGBT and Diode at Ty = 25C, - 36 - ns a Ice =Ic110: Current Rise Time tr Voce = 0.8 BVcEs, - 25 - ns Current Turn-Off Delay Time td(OFF)I Vag = 15, - 137 - ns Rg = 3, Current Fall Time ty L=1mH, - 58 - ns Turn-On Energy Eon Test Circuit (Figure 19) . 550 300 uJ Turn-Off Energy (Note 3) Eorr - 680 900 iJ 2 intersilHGTG30N60B3D Electrical Specifications To = 25C, Unless Otherwise Specified (Continued) PARAMETER SYMBOL TEST CONDITIONS MIN TYP MAX UNITS Current Turn-On Delay Time ta(ON)| IGBT and Diode at Ty = 150C, - 32 - ns Current Rise Time tr est BV ces, - 24 - ns Current Turn-Off Delay Time td(OFF)| are - 275 320 ns Current Fall Time te L=1mH, - 90 150 ns Turn-On Energy Eon Test Circuit (Figure 19) - 1300 1550 iJ Turn-Off Energy (Note 3) Eorr - 1600 1900 pd Diode Forward Voltage VeEc lec = 30A - 1.95 2.5 Vv Diode Reverse Recovery Time ter lec = 1A, dlec/dt = 200A/us - 32 40 ns lEG = 30A, dliec/dt = 200A/ys - 45 55 ns Thermal Resistance Junction To Case Rec IGBT - - 0.6 oCW Diode - - 1.3 Cw NOTE: 3. Turn-Off Energy Loss (Eorr) is defined as the integral of the instantaneous power loss starting at the trailing edge of the input pulse and ending at the point where the collector current equals zero (Ice = OA). All devices were tested per JEDEC Standard No. 24-1 Method for Measurement of Power Device Turn-Off Switching Loss. This test method produces the true total Turn-Off Energy Loss. Typical Performance CurveS _ unless Otherwise Specified 60 =p 225 ~ VoE = 15V < = ee 5 200 & 50 w i Ss 475 5 40 150 oc 3 = Ps N FE 125 F 30 = i iu 100 = 2 5 20 N ~ 75 o oO g 5 50 i 10 uw a 25 2 Q o oO 0 i oO 25 50 75 100 125 150 W Tc, CASE TEMPERATURE (C) FIGURE 1. DC COLLECTOR CURRENT vs CASE TEMPERATURE Ty = 150C, Rg = 39, V 100 200 300 400 = 15V, L = 100uH 500 600 700 Voce, COLLECTOR TO EMITTER VOLTAGE (V) FIGURE 2. MINIMUM SWITCHING SAFE OPERATING AREA 3 i ntersilHGTG30N60B3D Typical Performance Curves unless Otherwise Specified (Continued) FT Ty = 150C, Rg = 3, L = 1mH, = 100 Voce = 480V o 2 ee 3 = S 40 S tm ra o ye z /. < To OV & | fmax1=0.05/(tyorry+taon) _ & LSE /| a fmax2 = (Pp- Pc)/(Eon+Eorr) = reg tov 7S = [Pc =CONDUCTION DISSIPATION = 4506 45y-4>>% g (DUTY FACTOR = 50%) = 44906 inv 4 \ = Rosc = 0.6C/W, SEE NOTES | 045 10 20 40 60 Ice, COLLECTOR TO EMITTER CURRENT (A) FIGURE 3. OPERATING FREQUENCY vs COLLECTOR TO EMITTER CURRENT 225 | DUTY CYCLE <0.5%, Vgp = 10V 200 | PULSE DURATION = 175 Tc = -55C 150 125 100 75 50 25 Ice, COLLECTOR TO EMITTER CURRENT (A) 0 0 2 4 6 8 10 Voce, COLLECTOR TO EMITTER VOLTAGE (V) FIGURE 5. COLLECTOR TO EMITTER ON-STATE VOLTAGE Rg = 3, L = 1mH, Vc = 480V LY 5 | | Ty = 25C, Ty = 150C, Veg = 10V i, 4 \ \ f \ N\A 3 N I A, A 10 20 30 40 50 60 Ice, COLLECTOR TO EMITTER CURRENT (A) N \ Eon, TURN-ON ENERGY LOSS (mJ) Ty = 25C, Ty = 150C, Vgg = 15V FIGURE 7. TURN-ON ENERGY LOSS vs COLLECTOR TO EMITTER CURRENT tgc, SHORT CIRCUIT WITHSTAND TIME (us) Ice, COLLECTOR TO EMITTER CURRENT (A) Eorr; TURN-OFF ENERGY LOSS (mJ) nN o 1 1 500 Veg = 360V, Rg = 30, Ty = 125C is N 450 \ a \ A Isc 14 i 350 12 7 300 10 J ~~ 250 S/S tsc 8 SP ~*~ 200 Isc, PEAK SHORT CIRCUIT CURRENT (A) 6 150 10 11 12 13 14 15 Voge; GATE TO EMITTER VOLTAGE (V) FIGURE 4. SHORT CIRCUIT WITHSTAND TIME 350 t r r DUTY CYCLE <0.5%, Vg = 15V 300 | PULSE _ = \ a 250 LL Te = -55C H 200 To = 150C 150 / 100 Y Y, Tc = 25C 50 0 0 1 2 3 4 5 6 7 Voge, COLLECTOR TO EMITTER VOLTAGE (V) FIGURE 6. COLLECTOR TO EMITTER ON-STATE VOLTAGE Rg = 39, L= 1mH, Veg = 480V Ty = 150C, VgE = 10V OR 15V Ty = 25C, Vge = 10V OR 15V 0 10 20 30 40 50 60 Ice, COLLECTOR TO EMITTER CURRENT (A) FIGURE 8. TURN-OFF ENERGY LOSS vs COLLECTOR TO EMITTER CURRENT 4 intersilHGTG30N60B3D Typical Performance Curves unless Otherwise Specified (Continued) 55 Rg = 3, L = 1mH, Veg = 480V 50 45 Ty = 25C, Ty = 150C, Vee = 10V 40 35 ta], TURN-ON DELAY TIME (ns) 30 Ty = 25C, Ty = 150C, Veg = 15V 25 10 20 30 40 50 60 Ice, COLLECTOR TO EMITTER CURRENT (A) FIGURE 9. TURN-ON DELAY TIME vs COLLECTOR TO EMITTER CURRENT 300 ene. Rg = 39, L=1i1mH, oie a Ss = el Wu = \ la - 250 \ N Tee & Ty = 150C, Vge = 10V, Vge = 15V Wi Ty = 25C, VGE= 10V, Voge = 15V i i 200 9 Zz a 2 - 150 y = y L id 100 10 20 30 40 50 60 Ice, COLLECTOR TO EMITTER CURRENT (A) FIGURE 11. TURN-OFF DELAY TIME vs COLLECTOR TO EMITTER CURRENT 300 DUTY CYCLE <0.5%, Vog = 10V PULSE DURATION = 250us < i 250 5 Tc = -55C VY 5 w\ i 200 = 150 To = 25C | \ Fe o To = 150C 5 100 \ 7 O 4 50 8 Io i 9 ae 4 4 5 6 7 8 9 10 11 Voge; GATE TO EMITTER VOLTAGE (V) FIGURE 13. TRANSFER CHARACTERISTIC 250 Rg = 39, L=1i1mH, Voce = 480V | | Ty = 25C, Ty = 150C, Vgg = tov 200 | (7 _ oO - 0, = 150 Ty = 25 C, Ty = 150 C, VGE = 15V Na SE 7 100 N Z eo x | 0 6 ty, RISE TIME (ns) A 50 ma = 10 20 30 40 5 0 Ice, COLLECTOR TO EMITTER CURRENT (A) FIGURE 10. TURN-ON RISE TIME vs COLLECTOR TO EMITTER CURRENT Rg = 30, L= 1mH, Vcg = 480V # 100 Ty = 150C, Vge = 10V AND 15V Wu = ke a 80 iz 60 Ty = 25C, Vge = 10V AND 15V 40 10 20 30 40 50 60 Ice, COLLECTOR TO EMITTER CURRENT (A) FIGURE 12. FALL TIME vs COLLECTOR TO EMITTER CURRENT Ig (REF) = 1mA, RL = 100, Te = 25C Vor = 600V Vor = 200V Vor = 400V Vge, GATE TO EMITTER VOLTAGE (V) 0 50 100 150 200 Qg, GATE CHARGE (nC) FIGURE 14. GATE CHARGE WAVEFORMS 5 intersilHGTG30N60B3D Typical Performance Curves unless Otherwise Specified (Continued) 10 FREQUENCY = 1MHz C, CAPACITANCE (nF) Cc 2 OES CRES 0 5 10 15 20 25 Voce, COLLECTOR TO EMITTER VOLTAGE (V) FIGURE 15. CAPACITANCE vs COLLECTOR TO EMITTER VOLTAGE 1071 DUTY FACTOR, D = ty / ty 10 SINGLE PULSE PEAK Ty = (Pp X ZoJc X Roc) + Te Zeauc, NORMALIZED THERMAL RESPONSE 10 10% 10% 102 1071 10 io! t1, RECTANGULAR PULSE DURATION (s) FIGURE 16. NORMALIZED TRANSIENT THERMAL RESPONSE, JUNCTION TO CASE 50 200 Tc = 25C, digc/dt = 200A/us qe 175 < 40 5 150 z ter Ww n oc Ww m 125 = 30 3 F ta Q 100 ra g 20 = 75 8 9 tc "50 = a 10 25 0 0 0 05 10 15 20 25 30 35 40 1 2 5 10 20 30 Vec, FORWARD VOLTAGE (V) lec, FORWARD CURRENT (A) FIGURE 17. DIODE FORWARD CURRENT vs FORWARD FIGURE 18. RECOVERY TIME vs FORWARD CURRENT VOLTAGE DROP 6 intersilHGTG30N60B3D Test Circuit and Waveforms HGTG30N60B3D L=1mH Rg = 30 Tk + = Vpp = 480V FIGURE 19. INDUCTIVE SWITCHING TEST CIRCUIT Handling Precautions for IGBTs Insulated Gate Bipolar Transistors are susceptible to gate-insulation damage by the electrostatic discharge of energy through the devices. When handling these devices, care should be exercised to assure that the static charge built in the handlers body capacitance is not discharged through the device. With proper handling and application procedures, however, IGBTs are currently being extensively used in production by numerous equipment manufacturers in military, industrial and consumer applications, with virtually no damage problems due to electrostatic discharge. IGBTs can be handled safely if the following basic precautions are taken: 1. Prior to assembly into a circuit, all leads should be kept shorted together either by the use of metal shorting springs or by the insertion into conductive material such as ECCOSORBD LD26 or equivalent. 2. When devices are removed by hand from their carriers, the hand being used should be grounded by any suitable means - for example, with a metallic wristband. . Tips of soldering irons should be grounded. 4. Devices should never be inserted into or removed from circuits with power on. 5. Gate Voltage Rating - Never exceed the gate-voltage rating of Vaem. Exceeding the rated Vge can result in permanent damage to the oxide layer in the gate region. 6. Gate Termination - The gates of these devices are essentially capacitors. Circuits that leave the gate open-circuited or floating should be avoided. These conditions can result in turn-on of the device due to voltage buildup on the input capacitor due to leakage currents or pickup. 7. Gate Protection - These devices do not have an internal monolithic Zener diode from gate to emitter. If gate protection is required an external Zener is recommended. wo 90% \ 10% VGE Lo r| Eon ms Eorpr Ke VcE 90% CE al ta(OFF)I nn It 4 ta fl | > ta(on)I FIGURE 20. SWITCHING TEST WAVEFORMS Operating Frequency Information Operating frequency information for a typical device (Figure 3) is presented as a guide for estimating device performance for a specific application. Other typical frequency vs collector current (Ice) plots are possible using the information shown for a typical unit in Figures 5, 6, 7, 8,9 and 11. The operating frequency plot (Figure 3) of a typical device shows fryax1 OF fyaxe; whichever is smaller at each point. The information is based on measurements of a typical device and is bounded by the maximum rated junction temperature. fax is defined by fryyaxy = 0.05/(tg(QFF)I+ ta(ON)))- Deadtime (the denominator) has been arbitrarily held to 10% of the on-state time for a 50% duty factor. Other definitions are possible. ty(QFFy| and tyon)y| are defined in Figure 20. Device turn-off delay can establish an additional frequency limiting condition for an application other than Ty\y. ta(OFF)I is important when controlling output ripple under a lightly loaded condition. fax is defined by fyjaxe = (Pp - PcV(Eorr + Eon). The allowable dissipation (Pp) is defined by Pp = (Tym - Tc)/Reuc. The sum of device switching and conduction losses must not exceed Pp. A 50% duty factor was used (Figure 3) and the conduction losses (Pc) are approximated by Po = (Vc X Icg)/2. Eon and Eorr are defined in the switching waveforms shown in Figure 20. Eon is the integral of the instantaneous power loss (Ice X Vce) during turn-on and Eorr is the integral of the instantaneous power loss (Ice x VcE) during turn-off. All tail losses are included in the calculation for Eorr; i-e., the collector current equals zero (Ice = 0). All Intersil semiconductor products are manufactured, assembled and tested under ISO9000 quality systems certification. Intersil semiconductor products are sold by description only. Intersil Corporation reserves the right to make changes in circuit design and/or specifications at any time with- out notice. Accordingly, the reader is cautioned to verify that data sheets are current before placing orders. Information furnished by Intersil is believed to be accurate and reliable. However, no responsibility is assumed by Intersil or its subsidiaries for its use; nor for any infringements of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of Intersil or its subsidiaries. For information regarding Intersil Corporation and its products, see web site www.intersil.com 7 intersil ECCOSORBD" is a Trademark of Emerson and Cumming, Inc.