SBL(F,B)1030CT & SBL(F,B)1040CT
Vishay General Semiconductor
Document Number: 88726
Revision: 25-Apr-08
For technical questions within your region, please contact one of the following:
PDD-Americas@vishay.com, PDD-Asia@vishay.com, PDD-Europe@vishay.com
www.vishay.com
1
Dual Common-Cathode Schottky Rectifier
FEATURES
• Guardring for overvoltage protection
• Lower power losses, high efficiency
• Low forward voltage drop
• High forward surge capability
• High frequency operation
• Meets MSL level 1, per J-STD-020, LF maximum
peak of 245 °C (for TO-263AB package)
• Solder dip 260 °C, 40 s (for TO-220AB and
ITO-220AB package)
• Component in accordance to RoHS 2002/95/EC
and WEEE 2002/96/EC
TYPICAL APPLICATIONS
For use in low voltage, high frequency rectifier of
switching mode power supplies, freewheeling diodes,
dc-to-dc converters and polarity protection application.
MECHANICAL DATA
Case: TO-220AB, ITO-220AB, TO-263AB
Epoxy meets UL 94V-0 flammability rating
Terminals: Matte tin plated leads, solderable per
J-STD-002 and JESD22-B102
E3 suffix for consumer grade, meets JESD 201 class
1A whisker test, HE3 suffix for high reliability grade
(AEC Q101 qualified), meets JESD 201 class 2
whisker test
Polarity: As marked
Mounting Torque: 10 in-lbs maximum
PRIMARY CHARACTERISTICS
IF(AV) 5 A x 2
VRRM 30 V, 40 V
IFSM 175 A
VF0.55 V
TJ max. 125 °C
TO-263AB
CASE
PIN 2
PIN 1
PIN 3
TO-220AB
SBL10xxCT
ITO-220AB
SBLB10xxCT
PIN 1
K
PIN 2
HEATSINK
1
23
1
2
K
SBLF10xxCT
PIN 2
PIN 1
PIN 3
123
MAXIMUM RATINGS (TC = 25 °C unless otherwise noted)
PARAMETER SYMBOL SBL1030CT SBL1040CT UNIT
Maximum repetitive peak reverse voltage VRRM 30 40 V
Working peak reverse voltage VRWM 21 28 V
Maximum DC blocking voltage VDC 30 40 V
Maximum average forward rectified current at TC = 107 °C total device
per diode IF(AV)
10
5.0 A
Peak forward surge current 8.3 ms single half sine-wave superimposed
on rated load per diode IFSM 175 A
Operating junction and storage temperature range TJ, TSTG - 40 to + 125 °C
Isolation voltage (ITO-220AB only) from terminal to heatsink t = 1 min VAC 1500 V
SBL(F,B)1030CT & SBL(F,B)1040CT
Vishay General Semiconductor
www.vishay.com For technical questions within your region, please contact one of the following:
PDD-Americas@vishay.com, PDD-Asia@vishay.com, PDD-Europe@vishay.com
Document Number: 88726
Revision: 25-Apr-08
2
Note:
(1) Pulse test: 300 µs pulse width, 1 % duty cycle
Note:
(1) Automotive grade AEC Q101 qualified
RATINGS AND CHARACTERISTICS CURVES
(TA = 25 °C unless otherwise noted)
ELECTRICAL CHARACTERISTICS (TC = 25 °C unless otherwise noted)
PARAMETER TEST CONDITIONS SYMBOL VALUE UNIT
Maximum instantaneous forward voltage per diode (1) 5.0 A VF 0.55 V
Maximum instantaneous reverse current per diode at
rated DC blocking voltage (1)
TC = 25 °C
TC = 100 °C IR 0.5
50 mA
THERMAL CHARACTERISTICS (TC = 25 °C unless otherwise noted)
PARAMETER SYMBOL SBL SBLF SBLB UNIT
Typical thermal resistance per diode RθJC 3.0 5.0 3.0 °C/W
ORDERING INFORMATION (Example)
PACKAGE PREFERRED P/N UNIT WEIGHT (g) PACKAGE CODE BASE QUANTITY DELIVERY MODE
TO-220AB SBL1030CT-E3/45 1.85 45 50/tube Tube
ITO-220AB SBLF1030CT-E3/45 1.99 45 50/tube Tube
TO-263AB SBLB1030CT-E3/45 1.35 45 50/tube Tube
TO-263AB SBLB1030CT-E3/81 1.35 81 800/reel Tape and reel
TO-220AB SBL1030CTHE3/45 (1) 1.85 45 50/tube Tube
ITO-220AB SBLF1030CTHE3/45 (1) 1.99 45 50/tube Tube
TO-263AB SBLB1030CTHE3/45 (1) 1.35 45 50/tube Tube
TO-263AB SBLB1030CTHE3/81 (1) 1.35 81 800/reel Tape and reel
Figure 1. Forward Current Derating Curve
050 100 150
0
2.5
5
7.5
10
12.5
Resistive or Inductive Load
Average Forward Current (A)
Case Temperature (°C)
Figure 2. Maximum Non-Repetitive Peak Forward Surge
Current Per Diode
110 100
0
50
100
150
200
250
300
T
J
= T
J
Max.
8.3 ms Single Half Sine-Wave
Number of Cycles at 60 Hz
Peak Forward Surge Current (A)
SBL(F,B)1030CT & SBL(F,B)1040CT
Vishay General Semiconductor
Document Number: 88726
Revision: 25-Apr-08
For technical questions within your region, please contact one of the following:
PDD-Americas@vishay.com, PDD-Asia@vishay.com, PDD-Europe@vishay.com
www.vishay.com
3
Figure 3. Typical Instantaneous Forward Characteristics Per Diode
Figure 4. Typical Reverse Characteristics Per Diode
100
10
1
0.1
0.01
0 0.2 0.6 1.2 1.40.4 0.81.0
T
J
= 125 °C
T
J
= 25 °C
Pulse Width = 300 µs
1 % Duty Cycle
Instantaneous Forward Voltage (V)
Instantaneous Forward Current (A)
020 40 60 80100
0.001
0.01
0.1
1
10
100
T
J
= 125 °C
T
J
= 25 °C
T
J
= 75 °C
Percent of Rated Peak Reverse Voltage (%)
Instantaneous Reverse Current (mA)
Figure 5. Typical Junction Capacitance Per Diode
Figure 6. Typical Transient Thermal Impedance Per Diode
0.1 110 100
100
1000
10 000
T
J
= 25 °C
f = 1.0 MHz
V
sig
= 50 mVp-p
Reverse Voltage (V)
Junction Capacitance (pF)
0.01 0.1 110 100
0.1
1
10
100
t - Pulse Duration (s)
Transient Thermal Impedance (°C/W)
SBL(F,B)1030CT & SBL(F,B)1040CT
Vishay General Semiconductor
www.vishay.com For technical questions within your region, please contact one of the following:
PDD-Americas@vishay.com, PDD-Asia@vishay.com, PDD-Europe@vishay.com
Document Number: 88726
Revision: 25-Apr-08
4
PACKAGE OUTLINE DIMENSIONS in inches (millimeters)
TO-220AB
0.113 (2.87)
0.103 (2.62)
0.370 (9.40)
0.360 (9.14)
0.415 (10.54) MAX.
0.635 (16.13)
0.625 (15.87)
PIN
0.160 (4.06)
0.140 (3.56)
0.057 (1.45)
0.045 (1.14)
0.105 (2.67)
0.095 (2.41)
0.104 (2.65)
0.096 (2.45) 0.205 (5.20)
0.195 (4.95)
0.035 (0.90)
0.028 (0.70)
0.154 (3.91)
0.148 (3.74)
13
2
0.185 (4.70)
0.175 (4.44)
0.055 (1.39)
0.045 (1.14)
0.145 (3.68)
0.135 (3.43)
0.350 (8.89)
0.330 (8.38)
1.148 (29.16)
1.118 (28.40)
0.560 (14.22)
0.530 (13.46)
0.022 (0.56)
0.014 (0.36)
0.110 (2.79)
0.100 (2.54)
0.603 (15.32)
0.573 (14.55)
ITO-220AB
0.076 (1.93) REF.
45° REF.
PIN
321
0.404 (10.26)
0.384 (9.75)
0.076 (1.93) REF.
0.600 (15.24)
0.580 (14.73)
0.560 (14.22)
0.530 (13.46)
0.057 (1.45)
0.045 (1.14)
0.057 (1.45)
0.045 (1.14)
0.191 (4.85)
0.171 (4.35)
0.671 (17.04)
0.651 (16.54)
0.035 (0.89)
0.025 (0.64)
0.205 (5.21)
0.195 (4.95)
0.025 (0.64)
0.015 (0.38)
0.105 (2.67)
0.095 (2.41)
0.028 (0.71)
0.020 (0.51)
0.110 (2.79)
0.100 (2.54)
7° REF.
0.135 (3.43) DIA.
0.122 (3.08) DIA.
0.110 (2.79)
0.100 (2.54)
0.190 (4.83)
0.170 (4.32)
7° REF.
7° REF.
0.140 (3.56) DIA.
0.125 (3.17) DIA.
0.350 (8.89)
0.330 (8.38)
TO-263AB
Mounting Pad Layout
0.670 (17.02)
0.591 (15.00)
0.105 (2.67)
0.095 (2.41)
0.08 (2.032) MIN.
0.15 (3.81) MIN.
0.33 (8.38) MIN.
0.42 (10.66) MIN.
12
K
K
0.140 (3.56)
0.110 (2.79)
0.021 (0.53)
0.014 (0.36)
0.110 (2.79)
0.090 (2.29)
0 to 0.01 (0 to 0.254)
0.055 (1.40)
0.047 (1.19)
0.055 (1.40)
0.045 (1.14)
0.190 (4.83)
0.160 (4.06)
0.205 (5.20)
0.195 (4.95)
0.624 (15.85)
0.591 (15.00)
0.037 (0.940)
0.027 (0.686)
0.105 (2.67)
0.095 (2.41)
0.360 (9.14)
0.320 (8.13)
0.411 (10.45)
0.380 (9.65)
0.245 (6.22)
MIN.
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Revision: 12-Mar-12 1Document Number: 91000
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