D44H11, D45H11 High Power Bipolar Transistors Designed for various specific and general purpose application such as; output and driver stages of amplifiers operating at frequencies from DC to greater than 1 MHz; series, shunt and switching regulators; low and high frequency inverters/converters and many others Features: * * * * Very low collector saturation voltage Excellent linearity Fast switching PNP values are negative, observe proper polarity TO-220 Pin 1. 2. 3. 4. Base Collector Emitter Collector (Case) Dimensions Minimum Maximum A 14.68 15.31 B 9.78 10.42 C 5.01 6.52 D 13.06 14.62 E 3.57 4.07 F 2.42 3.66 G 1.12 1.36 H 0.72 0.96 I 4.22 4.98 J 1.14 1.38 K 2.2 2.97 L 0.33 0.55 M 2.48 2.98 O 3.7 3.9 NPN D44H11 PNP D45H11 10 Amperes Complementary Silicon Power Transistors 80 Volts 50 Watts Dimensions : Millimetres Maximum Ratings Characteristic Symbol D44H11 D45H11 Unit 80 V Collector - emitter voltage VCEO Collector - base voltage VCES Emitter - base voltage VEBO 5 IC ICM 10 20 Base current IB 2 Total power dissipation at TC = 25C derate above 25C PD 50 0.4 W W/C TJ, TSTG -55 to +150 C Collector current - continuous - peak Operating and storage junction temperature range A Thermal Characteristics Characteristic Symbol Maximum Unit Thermal resistance junction to case Rjc 2.5 C/W www.element14.com www.farnell.com www.newark.com Page <1> 15/12/11 V1.1 D44H11, D45H11 High Power Bipolar Transistors PD, Power Dissipation (Watts) Figure - 1 Power Derating TC, Temperature (C) Electrical Characteristics (TC = 25C Unless Otherwise Noted) Characteristic Symbol Minimum Maximum Unit OFF Characteristics Collector - emitter sustaining voltage (IC = 30 mA, IB = 0) VCEO (SUS) 80 - Collector - emitter cut off current (VCE = 80 V, VBE = 0) ICES - 10 Emitter - base cut off current (VEB = 5 V, IC = 0) IEBO - 100 hFE 60 40 - Collector - emitter saturation voltage (IC = 8 A, IB = 400 mA) VCE (sat) - 1 Base - emitter saturation voltage (IC = 8 A, IB = 800 mA) VBE (sat) - 1.5 V A ON Characteristics (1) DC current gain (IC = 2 A, VCE = 1 V) (IC = 4 A, VCE = 1 V) - V Dynamic Characteristics Current gain - bandwidth product (2) (IC = 500 mA, VCE = 10 V, f = 0.5 MHz) D44H11 D45H11 fT 15 12 - MHz Small - signal current gain (VCB = 200 mA, IE = 10 V, f = 1 MHz) D44H11 D45H11 Cob 220 400 - - D44H11 D45H11 tr - 0.5 0.6 s D44H11 D45H11 ts - 1 1.2 s D44H11 D45H11 tf - 0.4 0.5 s Switching Characteristics Rise Time Storage Time IC = 5 A, IB1 = -IB2 = 500 mA Fall Time (1) Pulse Test : Pulse width = 300 s, duty cycle 2% (2) fT = hfe* ftest www.element14.com www.farnell.com www.newark.com Page <2> 15/12/11 V1.1 D44H11, D45H11 High Power Bipolar Transistors "ON" Voltages V, Voltage (Volts) hFE, DC Current Gain DC Current Gain IC, Collector Current (Amperes) IC, Collector Current (Amperes) Forward Bias Safe Operating Area V, Voltage (Volts) IC, Collector Current (Amperes) "ON" Voltages IC, Collector Current (Amperes) IC, Collector Current (Amperes) Specification Table Description IC(av) Maximum (A) VCEO Maximum (V) hFE Minimum at at IC = 2 A Ptot at 25C (W) 10 80 60 50 High Power Bipolar Transistor High Power Bipolar Transistor Type Part Number NPN D44H11 PNP D45H11 Important Notice : This data sheet and its contents (the "Information") belong to the members of the Premier Farnell group of companies (the "Group") or are licensed to it. No licence is granted for the use of it other than for information purposes in connection with the products to which it relates. No licence of any intellectual property rights is granted. The Information is subject to change without notice and replaces all data sheets previously supplied. The Information supplied is believed to be accurate but the Group assumes no responsibility for its accuracy or completeness, any error in or omission from it or for any use made of it. Users of this data sheet should check for themselves the Information and the suitability of the products for their purpose and not make any assumptions based on information included or omitted. Liability for loss or damage resulting from any reliance on the Information or use of it (including liability resulting from negligence or where the Group was aware of the possibility of such loss or damage arising) is excluded. This will not operate to limit or restrict the Group's liability for death or personal injury resulting from its negligence. Multicomp is the registered trademark of the Group. (c) Premier Farnell plc 2011. www.element14.com www.farnell.com www.newark.com Page <3> 15/12/11 V1.1