NPN Silicon Power Transistor Features: * * * * Driver for high power outputs Series and shunt regulators Solenoid and relay drivers Power switching circuits Pinning Pin TO - 3 Transistor is designed for use in general purpose switching and linear amplifier application requiring high breakdown voltages Description 1 Base 2 Emitter Collector (case) Dimensions mm Minimum Maximum A 38.75 39.96 B 19.28 22.23 C 7.96 9.28 D 11.18 12.19 E 25.2 26.67 F 0.92 1.09 G 1.38 1.62 H 29.9 30.4 I 16.64 17.3 J 3.88 4.36 K 10.67 11.18 Dimensions : Millimetres Maximum Ratings Characteristic Symbol Value Unit Collector - base voltage VCBO 160 V Collector - emitter voltage VCEO 125 V Emitter - base voltage VEBO 7 V Collector current - Continuous - Peak IC 25 30 A Base current IB 5 A PD 150 0.857 W W/C Tj, Tstg -65 to +200 C Total power dissipation at Tc = 25C derate above 25C Operating and storage Junction temperature range www.element14.com www.farnell.com www.newark.com Page <1> 07/12/11 V1.1 NPN Silicon Power Transistor Thermal Characteristics Characteristic Symbol Maximum Unit Thermal resistance, junction to case Rjc 1.167 C/W PD, Power Dissipation (watts) Figure-1 Power Derating TC, Temperature (C) Electrical Characteristics (Tj = 25C Unless Otherwise noted) Characteristic Symbol Minimum Maximum Unit VCEO (SUS) 125 - V Collector cutoff current (VCE = 100 V, IB = 0) ICEO - 1.5 mA Collector cutoff current (VCE = 160 V, VBE (off) = 1.5 V) ICEX - 6 mA Emitter cutoff current (VEB = 5 V, IC = 0) IEBO - 1 mA hFE 20 10 60 Off Characteristics Collector - emitter sustaining voltage (1) (IC = 100 mA, IB = 0) On Characteristics (1) DC current gain (IC = 10 A; VCE = 2 V) (IC = 20 A; VCE = 4 V) Collector - emitter saturation voltage (IC = 10 A; IB = 1 A) (IC = 20 A; IB = 2 A) Base-emitter saturation voltage (IC = 20 A; VCE = 2 A) VCE(sat) 0.6 1.2 V VBE(sat) 2 V www.element14.com www.farnell.com www.newark.com Page <2> 07/12/11 V1.1 NPN Silicon Power Transistor Electrical Characteristics (Tj = 25C Unless Otherwise noted) Characteristic Symbol Minimum Maximum Unit fT 8 - MHz Dynamic Characteristics Current gain - bandwidth product (IC = 1 A, VCE = 15 V, f test = 1 MHz) (1) Pulse test: Pulse width = 300 s, duty cycle 2% (2) fT = hfe * f test Part Number Table Description Part Number NPN Silicon Power Transistor BUX10 Important Notice : This data sheet and its contents (the "Information") belong to the members of the Premier Farnell group of companies (the "Group") or are licensed to it. No licence is granted for the use of it other than for information purposes in connection with the products to which it relates. No licence of any intellectual property rights is granted. The Information is subject to change without notice and replaces all data sheets previously supplied. The Information supplied is believed to be accurate but the Group assumes no responsibility for its accuracy or completeness, any error in or omission from it or for any use made of it. Users of this data sheet should check for themselves the Information and the suitability of the products for their purpose and not make any assumptions based on information included or omitted. Liability for loss or damage resulting from any reliance on the Information or use of it (including liability resulting from negligence or where the Group was aware of the possibility of such loss or damage arising) is excluded. This will not operate to limit or restrict the Group's liability for death or personal injury resulting from its negligence. Multicomp is the registered trademark of the Group. (c) Premier Farnell plc 2011. www.element14.com www.farnell.com www.newark.com Page <3> 07/12/11 V1.1