NPN Silicon Power Transistor
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Features:
•Driver for high power outputs
•Series and shunt regulators
•Solenoid and relay drivers
•Power switching circuits
Pin Description
1 Base
2Emitter
Collector (case)
Pinning
TO - 3
Dimensions : Millimetres
Dimensions mm
Minimum Maximum
A 38.75 39.96
B 19.28 22.23
C 7.96 9.28
D 11.18 12.19
E 25.2 26.67
F 0.92 1.09
G 1.38 1.62
H 29.9 30.4
I 16.64 17.3
J 3.88 4.36
K 10.67 11.18
Transistor is designed for use in general
purpose switching and linear amplifier
application requiring high breakdown
voltages
Characteristic Symbol Value Unit
Collector - base voltage VCBO 160 V
Collector - emitter voltage VCEO 125 V
Emitter - base voltage VEBO 7 V
Collector current - Continuous
- Peak IC25
30 A
Base current IB5 A
Total power dissipation at Tc= 25°C
derate above 25°C PD150
0.857
W
W/°C
Operating and storage Junction
temperature range Tj, Tstg -65 to +200 °C
Maximum Ratings
NPN Silicon Power Transistor
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Characteristic Symbol Maximum Unit
Thermal resistance, junction to case Rθjc 1.167 °C/W
Thermal Characteristics
Characteristic Symbol Minimum Maximum Unit
Off Characteristics
Collector - emitter sustaining voltage (1)
(IC= 100 mA, IB= 0) VCEO (SUS) 125 - V
Collector cutoff current
(VCE = 100 V, IB= 0) ICEO - 1.5 mA
Collector cutoff current
(VCE = 160 V, VBE (off) = 1.5 V) ICEX - 6 mA
Emitter cutoff current
(VEB = 5 V, IC= 0) IEBO - 1 mA
On Characteristics (1)
DC current gain
(IC= 10 A; VCE = 2 V)
(IC= 20 A; VCE = 4 V)
hFE 20
10
60
Collector - emitter saturation voltage
(IC= 10 A; IB= 1 A)
(IC= 20 A; IB= 2 A)
VCE(sat) 0.6
1.2
V
Base-emitter saturation voltage
(IC= 20 A; VCE = 2 A) VBE(sat) 2 V
Electrical Characteristics (Tj= 25°C Unless Otherwise noted)
Figure-1 Power Derating
TC, Temperature (°C)
PD, Power Dissipation (watts)
NPN Silicon Power Transistor
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Characteristic Symbol Minimum Maximum Unit
Dynamic Characteristics
Current gain - bandwidth product
(IC= 1 A, VCE = 15 V, f test = 1 MHz) fT8 - MHz
Electrical Characteristics (Tj= 25°C Unless Otherwise noted)
(1) Pulse test: Pulse width = 300 µs, duty cycle ≤ 2%
(2) fT= hfe •ftest
Description Part Number
NPN Silicon Power Transistor BUX10
Part Number Table
Important Notice : This data sheet and its contents (the "Information") belong to the members of the Premier Farnell group of companies (the "Group") or are licensed to it. No licence is granted for the use of
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all data sheets previously supplied. The Information supplied is believed to be accurate but the Group assumes no responsibility for its accuracy or completeness, any error in or omission from it or for any use
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