DS30039 Rev. 6 - 2 1 of 4 MMBT4401
www.diodes.com ã Diodes Incorporated
MMBT4401
NPN SMALL SIGNAL SURFACE MOUNT TRANSISTOR
·Epitaxial Planar Die Construction
·Complementary PNP Type Available (MMBT4403)
·Ideal for Medium Power Amplification and Switching
·Available in Lead Free/RoHS Compliant Version (Note 2)
Characteristic Symbol MMBT4401 Unit
Collector-Base Voltage VCBO 60 V
Collector-Emitter Voltage VCEO 40 V
Emitter-Base Voltage VEBO 6.0 V
Collector Current - Continuous (Note 1) IC600 mA
Power Dissipation (Note 1) Pd300 mW
Thermal Resistance, Junction to Ambient (Note 1) RqJA 417 °C/W
Operating and Storage and Temperature Range Tj,T
STG -55 to +150 °C
Features
Maximum Ratings @ TA= 25°C unless otherwise specified
A
B
E
E
JL
TOP VIEW
M
BC
C
H
G
D
K
Mechanical Data
·Case: SOT-23
·Case Material: Molded Plastic. UL Flammability
Classification Rating 94V-0
·Moisture Sensitivity: Level 1 per J-STD-020C
·Terminal Connections: See Diagram
·Terminals: Solderable per MIL-STD-202, Method 208
·Also Available in Lead Free Plating (Matte Tin Finish
annealed over Alloy 42 leadframe). Please see Ordering
Information, Note 5, on Page 2
·Marking (See Page 2): K2X
·Ordering & Date Code Information: See Page 2
·Weight: 0.008 grams (approximate)
SOT-23
Dim Min Max
A0.37 0.51
B1.20 1.40
C2.30 2.50
D0.89 1.03
E0.45 0.60
G1.78 2.05
H2.80 3.00
J0.013 0.10
K0.903 1.10
L0.45 0.61
M0.085 0.180
a0°8°
All Dimensions in mm
Notes: 1. Device mounted on FR-4 PCB, 1 inch x 0.85 inch x 0.062 inch; pad layout as shown on Diodes Inc. suggested pad layout
document AP02001, which can be found on our website at http://www.diodes.com/datasheets/ap02001.pdf.
2. No purposefully added lead.
E
B
C
SPICE MODEL: MMBT4401
DS30039 Rev. 6 - 2 2 of 4 MMBT4401
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Electrical Characteristics @ TA = 25°C unless otherwise specified
Characteristic Symbol Min Max Unit Test Condition
OFF CHARACTERISTICS (Note 3)
Collector-Base Breakdown Voltage V(BR)CBO 60 ¾VIC= 100mA, IE = 0
Collector-Emitter Breakdown Voltage V(BR)CEO 40 ¾VIC= 1.0mA, IB = 0
Emitter-Base Breakdown Voltage V(BR)EBO 6.0 ¾VIE = 100mA, IC = 0
Collector Cutoff Current ICEX ¾100 nA VCE = 35V, VEB(OFF) = 0.4V
Base Cutoff Current IBL ¾100 nA VCE = 35V, VEB(OFF) = 0.4V
ON CHARACTERISTICS (Note 3)
DC Current Gain hFE
20
40
80
100
40
¾
¾
¾
300
¾
¾
IC = 100µA, VCE = 1.0V
IC = 1.0mA, VCE = 1.0V
IC = 10mA, VCE = 1.0V
IC = 150mA, VCE = 1.0V
IC = 500mA, VCE = 2.0V
Collector-Emitter Saturation Voltage VCE(SAT) ¾0.40
0.75 VIC= 150mA, IB = 15mA
IC = 500mA, IB = 50mA
Base-Emitter Saturation Voltage VBE(SAT) 0.75
¾
0.95
1.2 VIC = 150mA, IB = 15mA
IC = 500mA, IB = 50mA
SMALL SIGNAL CHARACTERISTICS
Output Capacitance Ccb ¾6.5 pF VCB = 5.0V, f = 1.0MHz, IE = 0
Input Capacitance Ceb ¾30 pF VEB = 0.5V, f = 1.0MHz, IC = 0
Input Impedance hie 1.0 15 kW
VCE = 10V, IC = 1.0mA,
f = 1.0kHz
Voltage Feedback Ratio hre 0.1 8.0 x 10-4
Small Signal Current Gain hfe 40 500 ¾
Output Admittance hoe 1.0 30 mS
Current Gain-Bandwidth Product fT250 ¾MHz VCE = 10V, IC = 20mA,
f = 100MHz
SWITCHING CHARACTERISTICS
Delay Time td¾15 ns VCC = 30V, IC = 150mA,
VBE(off) = 2.0V, IB1 = 15mA
Rise Time tr¾20 ns
Storage Time ts¾225 ns VCC = 30V, IC = 150mA,
IB1 = IB2 = 15mA
Fall Time tf¾30 ns
Month Jan Feb March Apr May Jun Jul Aug Sep Oct Nov Dec
Code 1234567
89 OND
Date Code Key
K2X = Product Type Marking Code
YM = Date Code Marking
Y = Year ex: N = 2002
M = Month ex: 9 = September
K2X
YM
Marking Information
Device Packaging Shipping
MMBT4401-7 SOT-23 3000/Tape & Reel
(Note 4)
Ordering Information
Year 1998 1999 2000 2001 2002 2003 2004 2005 2006 2007 2008 2009
Code JKLMNPR
ST U VW
Notes: 3. Short duration test pulse used to minimize self-heating effect.
4. For Packaging Details, go to our website at http://www.diodes.com/datasheets/ap02007.pdf.
5. For Lead Free/RoHS Compliant version part number, please add "-F" suffix to the part number above. Example: MMBT4401-7-F.
DS30039 Rev. 6 - 2 3 of 4 MMBT4401
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0
50
100
25 50 75 100 125 150 175 200
P , POWER DISSIPATION (mW)
D
T , AMBIENT TEMPERATURE (°C)
A
Fig. 1 Max Power Dissipation vs
Ambient Tem
p
erature
150
200
250
300
350
0
1
10
1000
100
0.1 110 1000
100
h , DC CURRENT GAIN
FE
I , COLLECTOR CURRENT (mA)
C
Fig. 2 Typical DC Current Gain vs
Collector Current
T = -25°C
A
T = +25°C
A
T = 125°C
A
V=1.0V
CE
1.0
5.0
20
10
30
0.1 101.0 50
CAPACITANCE (pF)
REVERSE VOLTS (V)
Fig. 3 Typical Capacitance
Cobo
Cibo
0.001 0.01 110
0.1 100
0
0.2
0.4
0.6
0.8
1.0
1.2
1.4
1.6
1.8
2
.
0
I , BASE CURRENT (mA)
B
Fi
g
.4 T
y
pical Collector Saturation Re
g
ion
V , COLLECTOR-EMITTER VOLTAGE (V)
CE
I=1mA
CI = 10mA
C
I = 30mA
C
I = 100mA
C
I = 300mA
C
DS30039 Rev. 6 - 2 4 of 4 MMBT4401
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110 100 1000
V,C
O
LLECT
O
RT
O
EMITTER
CE(SAT)
SATURATION VOLTAGE (V)
I , COLLECTOR CURRENT (mA)
C
Fig. 5 Collector Emitter Saturation Voltage
vs. Collector Current
T = 25°C
A
T = -50°C
A
T = 150°C
A
0
0.1
0.2
0.3
0.4
0.5
IC
IB
=10
1
0.1 10 100
V , BASE EMITTER V
O
LTAGE (V)
BE(ON)
I , COLLECTOR CURRENT (mA)
C
Fig. 6 Base Emitter Voltage vs. Collector Current
0.2
0.3
0.4
0.6
0.5
0.8
0.7
1.0
0.9 V=5V
CE
T = 25°C
A
T = -50°C
A
T = 150°C
A
1
10
100
1000
110100
I , COLLECTOR CURRENT (mA)
C
Fig. 7 Gain Bandwidth Product vs. Collector Current
f , GAIN BANDWIDTH PR
O
DUCT (MHz)
T
V=5V
CE
