2N/PN/SST4391 Series
2 Siliconix
E-77090—Rev. E, 11-Aug-97
Absolute Maximum Ratings
Gate-Drain, Gate-Source Voltage:
(2N/PN Prefixes) –40 V. . . . . . . . . . . . . . .
(SST Prefix) –35 V. . . . . . . . . . . . . . . . . . .
Gate Current 50 mA. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Lead Temperature 300 _C. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Storage Temperature : (2N Prefix) –65 to 200 _C. . . . . . . . . . . . . .
(PN/SST Prefixes) –55 to 150 _C. . . . . . . .
Operating Junction Temperature :
(2N Prefix) –55 to 200 _C. . . . . . . . . . . . . .
(PN/SST Prefixes) –55 to 150 _C. . . . . . . .
Power Dissipation : (2N Prefix)a(TC = 25_C) 1800 mW. . . . . .
(PN/SST Prefixes)b350 mW. . . . . . . . . . .
Notes
a. Derate 10 mW/_C above 25_C
b. Derate 2.8 mW/_C above 25_C
Specificationsa
Limits
4391 4392 4393
Parameter Symbol Test Conditions TypbMin Max Min Max Min Max Unit
Static
Gate-Source
Breakdown Voltage V(BR)GSS IG = –1 mA, VDS = 0 V –55 –40 –40 –40
Gate-Source
VDS = 20 V 2N/PN: ID = 1 nA
Cutoff Voltage
GS(off) VDS = 15 V SST: ID = 10 nA –
–
–
–
–
.
–
2N 50 150 25 75 5 30
aturat
on
ra
n
CurrentcIDSS VDS = 20 V, VGS = 0 V PN 50 150 25 100 5 60 mA
SST 50 25 5
VGS = –20 V 2N/SST –5 –100 –100 –100
VDS = 0 V PN –5 –1000 –1000 –1000
Gate Reverse Current IGSS 2N: TA = 150_C –13 –200 –200 –200
PN: TA = 100_C –1 –200 –200 –200 nA
SST: TA = 125_C –3
Gate Operating Current IGVDG = 15 V, ID = 10 mA –5
2N: VGS = –5 V 5 100
2N: VGS = –7 V 5 100
2N: VGS = –12 V 5 100
DS =
PN: VGS = –5 V 0.005
PN: VGS = –7 V 0.005 nA
PN: VGS = –12 V 0.005
SST VDS = 10 V, VGS = –10 V 5 100 100 100 pA
Drain Cutoff Current ID(off)
2N: VGS = –5 V 13 200
DS =
T
= 150_C2N: VGS = –7 V 13 200
2N: VGS = –12 V 13 200
PN: VGS = –5 V 1 200
DS =
T
= 100_CPN: VGS = –7 V 1 200
PN: VGS = –12 V 1 200
VDS = 10 V
TA = 125_CSST: VGS = –10 V 3
ID = 3 mA 0.25 0.4
ra
n-
ource
On-Volta
eVDS(on) VGS = 0 V ID = 6 mA 0.3 0.4 V
ID = 12 mA 0.35 0.4