TECHNICAL DATA SHEET
6 Lake Street, Lawrence, MA 01841
1-800-446-1158 / (978) 620-2600 / Fax: ( 978) 689-0803
Website: http: //www.microsemi.com
RADIATION HARDENED
NPN LOW POWER SILICON TRANSISTOR
Qualified per MIL-PRF-19500/368
T4-LDS-0134 Rev. 1 (091510) Page 1 of 2
DEVICES LEVELS
2N3439 2N3440 JANSM – 3K Rads (Si)
2N3439L 2N3440L JANSD – 10K Rads (Si)
2N3439UA 2N3440UA JANSP – 30K Rads (Si)
JANSL – 50K Rads (Si)
JANSR – 100K Rads (Si)
ABSOLUTE MAXIMUM RATINGS (TC = +25°C unless otherwise noted)
Parameters / Test Conditions Symbol 2N3439 2N3440 Unit
Collector-Emitter Voltage VCEO 350 250 Vdc
Collector-Base Voltage VCBO 450 300 Vdc
Emitter-Base Voltage VEBO 7.0 Vdc
Collector Current IC 1.0 Adc
Total Power Dissipation
UA
@ TA = +25°C (1)
@ TC = +25°C (2)
@ TSP = +25°C (3)
PT
0.8
5.0
2.0
W
Operating & Storage Temperature Range Top , Tstg -65 to +200 °C
1) Derate linearly @ 4.57mW/°C for TA > +25°C
2) Derate linearly @ 28.5mW/°C for TC > +25°C
3) Derate linearly @ 14mW/°C for TSP > +25°C
ELECTRICAL CHARACTERISTICS (TA = +25°C, unless otherwise noted)
Parameters / Test Conditions Symbol Min. Ma
x. Unit
OFF CHARACTERISTICS
Collector-Emitter Breakdown Voltage
IC = 10mAdc
RBB1 = 470Ω;VBB1 = 6V
L = 25mH (min); f = 30 – 60Hz
2N3439
2N3440
V(BR)CEO
350
250
Vdc
Collector-Emitter Cutoff Current
VCE = 300Vdc
VCE = 200Vdc
2N3439
2N3440
ICEO
2.0
2.0
µAdc
Emitter-Base Cutoff Current
VEB = 7.0Vdc IEBO 10 µAdc
Collector-Emitter Cutoff Current
VCE = 450Vdc, VBE = -1.5Vdc
VCE = 300Vdc, VBE = -1.5Vdc
2N3439
2N3440
ICEX
5.0
5.0
µAdc
Collector-Base Cutoff Current
VCB = 360Vdc
VCB = 250Vdc
VCB = 450Vdc
VCB = 300Vdc
2N3439
2N3440
2N3439
2N3440
ICBO
2.0
2.0
5.0
5.0
µAdc
TO-5 *
2N3439L, 2N3440L
TO-39 * (TO-205AD)
2N3439, 2N3440
UA
2N3439UA, 2N3440UA
* See Appendix A for Package
Outline
TECHNICAL DATA SHEET
6 Lake Street, Lawrence, MA 01841
1-800-446-1158 / (978) 620-2600 / Fax: ( 978) 689-0803
Website: http: //www.microsemi.com
RADIATION HARDENED
NPN LOW POWER SILICON TRANSISTOR
Qualified per MIL-PRF-19500/368
T4-LDS-0134 Rev. 1 (091510) Page 2 of 2
ELECTRICAL CHARACTERISTICS (TA = +25°C, unless otherwise noted) (CONT.)
Parameters / Test Conditions Symbol Min. Max. Unit
ON CHARACTERISTICS (3)
Forward-Current Transfer Ratio
IC = 20mAdc, VCE = 10Vdc
IC = 2.0mAdc, VCE = 10Vdc
IC = 0.2mAdc, VCE = 10Vdc
hFE
40
30
10
160
Collector-Emitter Saturation Voltage
IC = 50mAdc, IB = 4.0mAdc VCE(sat) 0.5 Vdc
Base-Emitter Saturation Voltage
IC = 50mAdc, IB = 4.0mAdc VBE(sat) 1.3 Vdc
DYNAMIC CHARACTERISTICS
Parameters / Test Conditions Symbol Min. Max. Unit
Magnitude of Common Emitter Small-Signal Short-Circuit
Forward Current Transfer Ratio
IC = 10mAdc, VCE = 10Vdc, f = 5.0MHz |hfe| 3.0 15
Forward Current Transfer Ratio
IC = 5.0mAdc, VCE = 10V, f = 1.0kHz hfe 25
Output Capacitance
VCB = 10Vdc, IE = 0, 100kHz ≤ f ≤ 1.0MHz Cobo 10 pF
Input Capacitance
VEB = 5.0Vdc, IC = 0, 100kHz ≤ f ≤ 1.0MHz Cibo 75 pF
SWITCHING CHARACTERISTICS
Parameters / Test Conditions Symbol Min. Max. Unit
Turn-On Time
VCC = 200Vdc; IC = 20mAdc, IB1 = 2.0mAdc ton
1.0 µs
Turn-Off Time
VCC = 200Vdc; IC = 20mAdc, IB1 = -IB2 = 2.0mAdc toff
10 µs
SAFE OPERATING AREA
DC Tests
TC = +25°C, 1 Cycle, t = 1.0s
Test 1
VCE = 5.0Vdc, IC = 1.0Adc Both Types
Test 2
VCE = 350Vdc, IC = 14mAdc 2N3439
Test 3
VCE = 250Vdc, IC = 20mAdc 2N3440
(3) Pulse Test: Pulse Width = 300µs, Duty Cycle ≤ 2.0%
