TIP122TU_F129 - FAIRCHILD SEMICONDUCTOR

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TIP120 / TIP121 / TIP122 — NPN Epitaxial Darlington Transistor

TIP120 / TIP121 / TIP122 Rev. 1.1.0

November 2014

TIP120 / TIP121 / TIP122

NPN Epitaxial Darlington Transistor

Features

• Medium Power Linear Switching Applications

• Complementary to TIP125 / TIP126 / TIP127

Ordering Information

Absolute Maximum Ratings

Stresses exceeding the absolute maximum ratings may damage the device. The device may not function or be opera-

ble above the re co mmen ded operating conditions and s tres si ng the parts to these level s is n ot re commended. In addi-

tion, extended exposure to stresses above the recommended operating conditions may affect device reliability. The

absolute maximum ratings are stress ratings only. Values are at TC = 25°C unless otherwise noted.

Part Number Top Mark Package Packing Method

TIP120 TIP120 TO-220 3L (Single Gauge) Bulk

TIP120TU TIP120 TO-220 3L (Single Gauge) Rail

TIP121 TIP121 TO-220 3L (Single Gauge) Bulk

TIP121TU TIP121 TO-220 3L (Single Gauge) Rail

TIP122 TIP122 TO-220 3L (Single Gauge) Bulk

TIP122TU TIP122 TO-220 3L (Single Gauge) Rail

Symbol Parameter Value Unit

VCBO Collector-Base Voltage TIP120 60 VTIP121 80

TIP122 100

VCEO Collector-Emitter Voltage TIP120 60 VTIP121 80

TIP122 100

VEBO Emitter-Base Voltage 5 V

IC Collector Current (DC) 5 A

ICP Collector Current (Pulse) 8 A

IB Base Current (DC) 120 mA

TJ Junction Temperature 150 °C

TSTG Storage Temperature Range -65 to 150 °C

1.Base 2.Collector 3.Emitter

1TO-220

Equivalent Circuit

R1 R2

R1 8kΩ≅

R2 0.12kΩ≅

TIP120 / TIP121 / TIP122 — NPN Epitaxial Darlington Transistor

TIP120 / TIP121 / TIP122 Rev. 1.1.0 2

Thermal Characteristics

Values are at TC = 25°C unless otherwise noted.

Electrical Characteristics

Values are at TC = 25°C unless otherwise noted.

Note:

1. Pulse test: pw ≤ 300 μs, duty cycle ≤ 2%.

Symbol Parameter Value Unit

PC Collector Dissipation (TA = 25°C) 2 W

Collector Dissipation (TC = 25°C) 65

Symbol Parameter Conditions Min. Max. Unit

VCEO(sus) Collector-Emitter Sustaining

Voltage

TIP120 IC = 100 mA, IB = 0 60 VTIP121 80

TIP122 100

ICEO Collector Cut-Off Current TIP120 VCE = 30 V, IB = 00.5

mATIP121 VCE = 40 V, IB = 0 0.5

TIP122 VCE = 50 V, IB = 0 0.5

ICBO Collector Cut-Off Current TIP120 VCB = 60 V, IE = 0 0.2 mATIP121 VCB = 80 V, IE = 0 0.2

TIP122 VCB = 100 V, IE = 0 0.2

IEBO Emitter Cut-Off Current VEB = 5 V, I C = 0 2 mA

hFE DC Current Gain(1) VCE = 3 V, IC = 0.5 A 1000

VCE = 3 V, IC = 3 A 1000

VCE(sat) Collector-Emitter Saturation Voltage(1) IC = 3 A, IB = 12 mA 2.0 V

IC = 5 A, IB = 20 mA 4.0

VBE(on) Base-Emitter On Voltage(1) VCE = 3 V, IC = 3 A 2.5 V

Cob Output Capacitance VCB = 10 V, IE = 0,

f = 0.1 MHz 200 pF

TIP120 / TIP121 / TIP122 — NPN Epitaxial Darlington Transistor

TIP120 / TIP121 / TIP122 Rev. 1.1.0 3

Typical Performance Characteristics

Figure 1. DC Current Gain Figure 2. Base-Emitter Saturation Voltage and

Collector-Emitter Saturation Voltage

Figure 3. Output and Input Capacitance

vs. Reverse Voltage Figure 4. Safe Operating Area

Figure 5. Power Derating

0.1 1 10

100

1000

10000

VCE = 4V

hFE, DC CURRENT GAIN

IC[A], COLLECTOR CURRENT

0.1 1 10

0.5

1.0

1.5

2.0

2.5

3.0

3.5 IC = 250IB

VCE(sat)

VBE(sat)

VBE(sat), VCE(sat)[V], SATURATION VOLTAGE

IC[A], COLLECTOR CURRENT

0.1 1 10 100

100

1000

Cob

f=0.1MHz

VCB[V], COLLECTOR-BASE VOLTAGE

VEB[V], EMITTER-BASE VOLTAGE

Cob[pF] Cib[pF], CAPACITANC E

Cib

1 10 100

0.01

0.1

TIP121

TIP122

TIP120

5ms

100μs

500μs

1ms

IC[A], COLLECTOR CURRENT

VCE[V], COLLECTOR-EMITTER VOLTAGE

0 25 50 75 100 125 150 175

PC[W], POWER DISSIPATION

TC[oC], CASE TEMPERATURE

TIP120 / TIP121 / TIP122 — NPN Epitaxial Darlington Transistor

TIP120 / TIP121 / TIP122 Rev. 1.1.0 4

Physical Dimensions

Figure 6. TO-220, MOLDED, 3LEAD, JEDEC VARIATION AB

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Rev. I72

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