RQJ0602EGDQS Silicon P Channel MOS FET Power Switching REJ03G1268-0300 Rev.3.00 Jun 05, 2006 Features * Low on-resistance RDS(on) = 485 m typ (VGS = -10 V, ID = -0.75 A) * Low drive current * High speed switching * 4.5 V gate drive Outline RENESAS package code: PLZZ0004CA-A (Package name: UPAK R ) 2, 4 D 2 1 3 1. Gate 2. Drain 3. Source 4. Drain 1G 4 S 3 Note: Marking is "EG". *UPAK is a trademark of Renesas Technology Corp. Absolute Maximum Ratings (Ta = 25C) Item Drain to source voltage Gate to source voltage Drain current Symbol VDSS VGSS ID Drain peak current ID (pulse)Note1 Body - drain diode reverse drain current IDR Channel dissipation Pch Note2 Channel dissipation Pch (pulse)Note1 Channel temperature Tch Storage temperature Tstg Notes: 1. PW 1 s, duty cycle 1% 2. When using the glass epoxy board (FR-4: 40 x 40 x 1 mm) Rev.3.00 Jun 05, 2006 page 1 of 6 Ratings -60 +10 / -20 -1.5 Unit V V A -2.2 -1.5 1.5 5 150 -55 to +150 A A W W C C RQJ0602EGDQS Electrical Characteristics (Ta = 25C) Item Drain to source breakdown voltage Gate to source breakdown voltage Gate to source breakdown voltage Gate to source leak current Gate to source leak current Drain to source leak current Gate to source cutoff voltage Symbol V(BR)DSS V(BR)GSS V(BR)GSS IGSS IGSS IDSS VGS(off) Min -60 +10 -20 -- -- -- -1.0 Typ -- -- -- -- -- -- -- Max -- -- -- +10 -10 -1 -2.0 Unit V V V A A A V Test conditions ID = -10 mA, VGS = 0 IG = +100 A, VDS = 0 IG = -100 A, VDS = 0 VGS = +8 V, VDS = 0 VGS = -16 V, VDS = 0 VDS = -60 V, VGS = 0 VDS = -10 V, ID = -1 mA Drain to source on state resistance RDS(on) -- 485 607 m ID = -0.75 A, VGS = -10 VNote3 RDS(on) -- 620 868 m ID = -0.75 A, VGS = -4.5 VNote3 Forward transfer admittance Input capacitance Output capacitance Reverse transfer capacitance Turn - on delay time Rise time Turn - off delay time |yfs| Ciss Coss Crss td(on) tr td(off) 0.8 -- -- -- -- -- -- 1.4 135 24 12 11 28 29 -- -- -- -- -- -- -- S pF pF pF ns ns ns ID = -0.75 A, VDS = -10 VNote3 Fall time Total gate charge Gate to source charge Gate to drain charge Body - drain diode forward voltage Notes: 3. Pulse test tf Qg Qgs Qgd VDF -- -- -- -- -- 3.6 2.9 0.6 0.3 -0.9 -- -- -- -- -- ns nC nC nC V Rev.3.00 Jun 05, 2006 page 2 of 6 VDS = -10 V VGS = 0 f = 1 MHz ID = -1 A VGS = -10 V RL = 6.6 Rg = 4.7 VDD = -10 V VGS = -10 V ID = -1.5 A IF = -1.5 A, VGS = 0Note3 RQJ0602EGDQS Main Characteristics Maximum Channel Power Dissipation Curve Maximum Safe Operation Area -100 2.0 1.0 100 125 -0.1 -0.01 -0.01 150 -3.5 V -6 V -7 V -8 V -3 V -0.5 -2.5 V -1 -2 -3 -4 -1.5 -1.0 -0.5 25C Tc = 75C VGS = 0 V 0 -100 VDS = -10 V Pulse Test Drain Current ID (A) Drain Current ID (A) Pulse Test Tc = 25C -1.0 0 -10 -2.0 -4 V -4.5 V -5 V -1.5 -1 Typical Transfer Characteristics (1) Typical Output Characteristics -10 V -0.1 Drain to Source Voltage VDS (V) Ambient Temperature Ta (C) *When using the glass epoxy board (FR-4: 40 x 40 x 1 mm) -2.0 -9 V s 75 m 50 s n tio ra 25 0 pe 0 10 -1 O 0 10 s C 0.5 Operation in this area is limited by RDS(on) -10 D Drain Current ID (A) 1.5 s 0 m =1 1 PW Channel Dissipation Pch (W) Ta = 25C 1 Shot Pulse 0 -5 Drain to Source Voltage VDS (V) 0 -1 -2 -25C -3 -4 Gate to Source Voltage VGS (V) -0.1 Drain Current ID (A) VDS = -10 V Pulse Test Tc = 75C -0.01 25C -0.001 -25C -0.0001 0 -0.5 -1 -1.5 -2 -2.5 -3 Gate to Source Voltage VGS (V) Rev.3.00 Jun 05, 2006 page 3 of 6 Gate to Source Cutoff Voltage VGS(off) (V) Gate to Source Cutoff Voltage vs. Typical Transfer Characteristics (2) Case Temperature -2.5 -2 ID = -10 mA -1 mA -1.5 -100 A VDS = -10 V Pulse Test -1 -25 0 25 50 75 100 125 150 Case Temperature Tc (C) -1.2 Pulse Test Tc = 25C -1.0 -0.8 -0.6 -1.0 A -0.4 -0.1 A -0.5 A -0.2 -0.2 A 0 0 -5 -10 -15 -20 Static Drain to Source on State Resistance vs. Drain Current Drain to Source on State Resistance RDS(on) () Drain to Source Saturation Voltage vs. Gate to Source Voltage 10 Pulse Test Tc = 25C 1 VDS = -4.5 V -10 V 0.1 -0.1 -1 -10 Drain Current ID (A) Static Drain to Source on State Resistance vs. Case Temperature Static Drain to Source on State Resistance vs. Case Temperature 1200 Pulse Test VGS = -4.5 V ID = -1 A -0.5 A 1000 800 -0.2 A -0.1 A 600 400 -25 0 25 50 75 100 125 150 Drain to Source on State Resistance RDS(on) (m) Gate to Source Voltage VGS (V) 1000 Pulse Test VGS = -10 V ID = -1 A -0.5 A 800 600 -0.2 A -0.1 A 400 200 -25 0 25 50 75 100 125 150 Case Temperature Tc (C) Case Temperature Tc (C) Forward Transfer Admittance vs. Drain Current Zero Gate Voltage Drain current vs. Case Temperature 10 -25C 1 25C Tc = 75C 0.1 -0.1 Pulse Test VDS = -10 V -1.0 Drain Current ID (A) Rev.3.00 Jun 05, 2006 page 4 of 6 -10.0 Zero Gate Voltage Drain current IDSS (nA) Forward Transfer Admittance |yfs| (S) Drain to Source on State Resistance RDS(on) (m) Drain to Source Saturation Voltage VDS(on) (V) RQJ0602EGDQS -1000 Pulse Test VGS = 0 V VDS = -60 V -100 -10 -1 -25 0 25 50 75 100 125 150 Case Temperature Tc (C) RQJ0602EGDQS Switching Characteristics VDD = -10 V -25 V ID = -1.5 A Tc = 25C -20 -40 -4 -8 -50 V VDD = -50 V VDS -25 V -12 -60 -10 V VGS -80 -16 2 0 4 6 1000 Switching Time t (ns) 0 0 Gate to Source Voltage VGS (V) Drain to Source Voltage VDS (V) Dynamic Input Characteristics VDD = -10 V VGS = -10 V Rg = 4.7 PW = 5 s Tc = 25C 100 td(off) 10 td(on) tr tf 1 -0.01 8 -0.1 -1 -10 Gate Charge Qg (nC) Drain Current ID (A) Typical Capacitance vs. Drain to Source Voltage Input Capacitance vs. Gate to Source Voltage 1000 230 Ciss 210 100 Coss Ciss (pF) Ciss, Coss, Crss (pF) 220 10 -20 -30 -40 -50 0 5 10 Gate to Source Voltage VGS (V) Reverse Drain Current vs. Source to Drain Voltage Body-Drain Diode Forward Voltage vs. Case Temperature -1.5 -10V -1.0 -5V VGS = 0 V, 5 V -0.4 -0.8 -1.2 -1.6 -2.0 Source Drain Voltage VSD (V) Rev.3.00 Jun 05, 2006 page 5 of 6 Body-Drain Diode Forward Voltage VSDF (V) Reverse Drain Current IDR (A) -5 Drain to Source Voltage VDS (V) Pulse Test Tc = 25C 0 0 160 -10 -60 -2.0 -0.5 VDS = 0 V f = 1 MHz 170 VGS = 0 V f = 1 MHz -10 190 180 Crss 1 -0 200 -0.8 VGS = 0 -0.7 -0.6 ID = -10 mA -0.5 -1 A -0.4 -0.3 -25 0 25 50 75 100 125 150 Case Temperature Tc (C) RQJ0602EGDQS Package Dimensions 1.5 1.5 3.0 MASS[Typ.] 0.050g 1.5 0.1 0.44 Max 2.5 0.1 4.25 Max 0.53 Max 0.48 Max 0.8 Min 1 0.4 4.5 0.1 1.8 Max Previous Code UPAK / UPAKV Unit: mm (1.5) 0.44 Max (0.2) RENESAS Code PLZZ0004CA-A (2.5) JEITA Package Code SC-62 (0.4) Package Name UPAK Ordering Information Part Name RQJ0602EGDQSTL-E Quantity 1000 pcs. Rev.3.00 Jun 05, 2006 page 6 of 6 Shipping Container 178 reel, 12 mm Emboss taping Sales Strategic Planning Div. Nippon Bldg., 2-6-2, Ohte-machi, Chiyoda-ku, Tokyo 100-0004, Japan Keep safety first in your circuit designs! 1. Renesas Technology Corp. puts the maximum effort into making semiconductor products better and more reliable, but there is always the possibility that trouble may occur with them. Trouble with semiconductors may lead to personal injury, fire or property damage. Remember to give due consideration to safety when making your circuit designs, with appropriate measures such as (i) placement of substitutive, auxiliary circuits, (ii) use of nonflammable material or (iii) prevention against any malfunction or mishap. Notes regarding these materials 1. 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