Copyright 2002 Semicoa Semiconductors, Inc.
Rev. F 333 McCormick Avenue, Costa Mesa, California 92626 714.979.1900, FAX 714.557.4541 Page 1 of 2
www.SEMICOA.com
2N2484UB
Silicon NPN Transisto
r
Data Sheet
Description
Semicoa Semiconductors offers:
• Screening and processing per MIL-PRF-19500 Appendix E
• JAN level (2N2484UBJ)
• JANTX level (2N2484UBJX)
• JANTXV level (2N2484UBJV)
• JANS level (2N2484UBJS)
• QCI to the applicable level
• 100% die visual inspection per MIL-STD-750 method
2072 for JANTXV and JANS
• Radiation testing (total dose) upon request
Please contact Semicoa for special configurations
www.SEMICOA.com or (714) 979-1900
Applications
• General purpose
• Low power
• NPN silicon transistor
Features
• Hermetically sealed Cersot ceramic
• Also available in chip configuration
• Chip geometry 0307
• Reference document:
MIL-PRF-19500/376
Benefits
• Qualification Levels: JAN, JANTX,
JANTXV and JANS
• Radiation testing available
Absolute Maximum Ratings TC = 25°C unless otherwise specified
Parameter Symbol Rating Unit
Collector-Emitter Voltage VCEO 60
Volts
Collector-Base Voltage VCBO 60
Volts
Emitter-Base Voltage VEBO 6
Volts
Collector Current, Continuous IC 50
mA
Power Dissipation, TA = 25°C
Derate linearly above 25°C PT 360
2.06
mW
mW/°C
Thermal Resistance RθJA 325 °C/W
Operating Junction Temperature TJ -65 to +200 °C
Storage Temperature TSTG -65 to +200 °C
Copyright 2002 Semicoa Semiconductors, Inc.
Rev. F 333 McCormick Avenue, Costa Mesa, California 92626 714.979.1900, FAX 714.557.4541 Page 2 of 2
www.SEMICOA.com
2N2484UB
Silicon NPN Transisto
r
Data Sheet
ELECTRICAL CHARACTERISTICS
characteristics specified at TA = 25°C
Off Characteristics
Parameter Symbol Test Conditions Min Typ Max Units
Collector-Emitter Breakdown Voltage V(BR)CEO I
C = 10 mA 60 Volts
Collector-Base Cutoff Current
ICBO1
ICBO2
ICBO3
VCB = 60 Volts
VCB = 45 Volts
VCB = 45 Volts, TA = 150°C
10
5
10
µA
nA
µA
Collector-Emitter Cutoff Current ICEO V
CE = 5 Volts 2 nA
Collector-Emitter Cutoff Current ICES V
CE = 45 Volts 5 nA
Emitter-Base Cutoff Current IEBO1
IEBO2
VEB = 6 Volts
VEB = 5 Volts
10
2
µA
nA
On Characteristics Pulse Test: Pulse Width = 300 µs, Duty Cycle ≤ 2.0%
Parameter Symbol Test Conditions Min Typ Max Units
DC Current Gain
hFE1
hFE2
hFE3
hFE4
hFE5
hFE6
hFE7
IC = 1 µA, VCE = 5 Volts
IC = 10 µA, VCE = 5 Volts
IC = 100 µA, VCE = 5 Volts
IC = 500 µA, VCE = 5 Volts
IC = 1 mA, VCE = 5 Volts
IC = 10 mA, VCE = 5 Volts
IC = 10 µA, VCE = 5 Volts
TA = -55°C
45
200
225
250
250
225
35
500
675
800
800
800
Base-Emitter Voltage VBE VCE = 5 Volts, 100 µA 0.5 0.7 Volts
Collector-Emitter Saturation Voltage VCEsat1 IC = 1 mA, IB = 100 µA 0.3 Volts
Dynamic Characteristics
Parameter Symbol Test Conditions Min Typ Max Units
Magnitude – Common Emitter, Short
Circuit Forward Current Transfer Ratio
|hFE|1
|hFE|2
VCE = 5 Volts, IC = 50 µA,
f = 5 MHz
VCE = 5 Volts, IC = 500 µA,
f = 30 MHz
3
2
7
Small Signal Short Circuit Forward
Current Transfer Ratio hFE VCE = 5 Volts, IC = 1 mA,
f = 1 kHz 250 900
Open Circuit Output Capacitance COBO VCB = 5 Volts, IE = 0 mA,
100 kHZ < f < 1 MHz 5 pF
Open Circuit Input Capacitance CIBO VEB = 0.5 Volts, IC = 0 mA,
100 kHZ < f < 1 MHz 6 pF
Noise Figure
NF1
NF2
NF3
VCE = 5 Volts, IC = 10 µA,
Rg = 10 kΩ
f = 100 Hz
f = 1 kHz
f = 10 kHz
7.5
3
2
dB
Noise Figure (wideband) NF4
VCE = 5 Volts, IC = 10 µA,
Rg = 10 kΩ,
10Hz < Noise BW <15.7kHz
3 dB
Short Circuit Input Impedance
Open Circuit Output Admittance
Open Circuit Rev Volt Transfer Ratio
hie
hoe
hre
VCB = 5V, IC = 1mA, f = 1kHz 3.5
24
40
8x10-4
kΩ
µmhos
