MBL104S, MBL106S, MBL108S, MBL110S
www.vishay.com Vishay General Semiconductor
Revision: 12-Sep-13 1Document Number: 89959
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Miniature Glass Passivated Single-Phase
Surface Mount Bridge Rectifier
FEATURES
• UL recognition file number E54214
• Low profile - typical height of 1.4 mm
• Ideal for automated placement
• High surge current capability
• Meets MSL level 1, per J-STD-020,
LF maximum peak of 260 °C
• Material categorization: For definitions of compliance
please see www.vishay.com/doc?99912
TYPICAL APPLICATIONS
General purpose use in AC/DC bridge full wave rectification
for power supply, lighting ballaster, battery charger, home
appliances, office equipment, and telecommunication
applications.
MECHANICAL DATA
Case: MBLS
Epoxy meets UL 94 V-0 flammability rating
Base P/N-M3 - halogen-free, RoHS-compliant, and
commercial grade
Terminals: Matte tin plated leads, solderable per
J-STD-002 and JESD22-B102
M3 suffix, meets JESD 201 class 1A whisker test
Polarity: As marked on body
Note
(1) Device mounted on 0.47" x 0.47" (12 mm x 12 mm) copper pad areas, 1 oz. PCB
PRIMARY CHARACTERISTICS
Package MBLS
IF(AV) 1.0 A
VRRM 400 V, 600 V, 800 V, 1000 V
IFSM 30 A
IR5 μA
VF at IF = 0.4 A 0.95 V
TJ max. 150 °C
Diode variations Quad
~
~
+
-
~
+
-
Case Style (MBLS)
~
~
-
+
MAXIMUM RATINGS (TA = 25 °C unless otherwise noted)
PARAMETER SYMBOL MBL104S MBL106S MBL108S MBL110S UNIT
Maximum repetitive peak reverse voltage VRRM 400 600 800 1000 V
Maximum RMS voltage VRMS 280 420 560 700 V
Maximum DC blocking voltage VDC 400 600 800 1000 V
Maximum average forward output rectified current
(fig. 1, fig. 2) IF(AV) (1) 1.0 A
Peak forward surge current single sine-wave
superimposed on rated load IFSM 30 A
Rating for fusing (t < 8.3 ms) I2t3.0A
2s
Operating junction and storage temperature range TJ, TSTG - 55 to + 150 °C
MBL104S, MBL106S, MBL108S, MBL110S
www.vishay.com Vishay General Semiconductor
Revision: 12-Sep-13 2Document Number: 89959
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Notes
(1) Pulse test: 300 μs pulse width, 1 % duty cycle
(2) Pulse test: Pulse width ≤ 40 ms
Note
(1) Device mounted on 0.47" x 0.47" (12 mm x 12 mm) copper pad areas, 1 oz. PCB
RATINGS AND CHARACTERISTICS CURVES (TA = 25 °C unless otherwise noted)
Fig. 1 - Derating Curve for Output Rectified Current Fig. 2 - Maximum Non-Repetitive Peak Forward Surge
Current Per Diode
ELECTRICAL CHARACTERISTICS (TA = 25 °C unless otherwise noted)
PARAMETER TEST CONDITIONS SYMBOL MBL104S MBL106S MBL108S MBL110S UNIT
Maximum instantaneous
forward voltage drop per diode IF = 0.4 A TA = 25 °C VF (1) 0.95 V
Maximum DC reverse current
per diode Rated VR
TA = 25 °C IR (2) 5μA
TA = 125 °C 500
THERMAL CHARACTERISTICS (TA = 25 °c unless otherwise noted)
PARAMETER SYMBOL MBL104S MBL106S MBL108S MBL110S UNIT
Typical thermal resistance (1) RθJA 72 °C/W
RθJL 25
ORDERING INFORMATION (Example)
PREFERRED P/N UNIT WEIGHT (g) PREFERRED PACKAGE CODE BASE QUANTITY DELIVERY MODE
MBL106S-M3/I 0.136 I 4000 13" diameter plastic tape and reel
1
1.1
0.3
0.4
0.5
0.6
0.7
0.8
0.9
1
1.1
0
0.1
0.2
0.3
0.4
0 25 50 75 100 125 150
Ambient Temperature (°C)
Average Rectied Forward Current (A)
Free air,
Mounted on 12 mm x 12 mm, 1 oz. PCB
Lead Temperature (°C)
Average Rectied Forward Current (A)
0.6
0.8
1
1.2
0
0.2
0.4
0.6
0 25 50 75 100 125 150
Free air,
Mounted on 12 mm x 12 mm, 1 oz. PCB
RthJL = 25 °C/W
MBL104S, MBL106S, MBL108S, MBL110S
www.vishay.com Vishay General Semiconductor
Revision: 12-Sep-13 3Document Number: 89959
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Fig. 3 - Forward Power Dissipation
Fig. 4 - Typical Instantaneous Forward Characteristics Per Diode
Fig. 5 - Typical Reverse Characteristics Per Diode
Fig. 6 - Typical Junction Capacitance Per Diode
PACKAGE OUTLINE DIMENSIONS in millimeters
0.8
1
1.2
1.4
1.6
1.8
2
0
0.2
0.4
0.6
0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1
Average Rectied Forward Current (A)
Forward Power Dissipation (W)
0.1
1
10
0.5 0.6 0.7 0.8 0.9 1.0 1.1 1.2 1.3
Instantaneous Forward Current (A)
Instantaneous Forward Voltage (V)
T
A= 80 °C
TA= 150 °C
TA= 25 °C
TA= 100 °C
0.01
0.1
1
10
100
20 40 60 80 100
Instantaneous Forward Current (A)
Instantaneous Forward Voltage (V)
T
A= 80 °C
TA= 150°C
TA= 100°C
TA= 25 °C
1
10
100
0.1 1 10 100
Junction Capacitance (pF)
Reverse Voltage (V)
6.2 ± 0.2
4.6 ± 0.1
0.45 ± 0.2
0.1 0
- 0.08
0.2 + 0.1
- 0.05
4 ± 0.2
5.3 max.
4.8 max.
1
2
4
3
1
2
4
3
5.1 ± 0.1
0.7 ± 0.1
1.5 max.
0.6
MBLS
Mounting Pad Layout
0.7 min.
6.4 max.
0.45 min.
4 ± 0.2
Legal Disclaimer Notice
www.vishay.com Vishay
Revision: 08-Feb-17 1Document Number: 91000
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