UTC MMBT2222A NPN EPITAXIAL SILICON TRANSISTOR
UTC UNISONIC TECHNOLOGIES CO., LTD. 2
QW-R206-019,A
PARAMETER SYMBOL TEST CONDITIONS MIN TYP MAX UNIT
ON CHARACTERISTICS
DC current gain hFE
Ic=0.1mA, VCE=10V
Ic=1.0mA, VCE=10V
Ic=10mA, VCE=10V
Ic=10mA, VCE=10V, TA=-55°C
Ic=150mA, VCE=10V*
Ic=150mA, VCE=1.0V*
Ic=500mA, VCE=10V*
35
50
75
35
100
50
40
300
Collector-emitter saturation voltage* VCE(sat) Ic=150mA, IB=15mA
Ic=500mA, IB=50mA
0.3
1.0
V
V
Base-emitter saturation voltage* VBE(sat) Ic=150mA, IB=15mA
Ic=500mA, IB=50mA
0.6 1.2
2.0
V
V
SMALL SIGNAL CHARACTERISTICS
Current gain-Bandwidth product fT Ic=20mA, VCE=20V, f=100MHz 300 MHz
Output capacitance Cobo VCB=10V, IE=0, f=100kHz 8.0 pF
Input capacitance Cibo VEB=0.5V, IC=0, f=100kHz 25 pF
Collector base time constant rb'Cc IC=20mA, VCB=20V, f=31.8MHz 150 pS
Noise figure NF IC=100µA, VCE=10V, Rs=1.0kΩ,
f=1.0kHz
4.0 dB
Real part of common-emitter high
frequency input impedance
Re(hje) IC=20mA, VCB=20V, f=300MHz 60 Ω
SWITCHING CHARACTERISTICS
Delay time td Vcc=30V, VBE(OFF)=0.5V, 10 ns
Rise time tr IC=150mA, IB1=15mA 25 ns
Storage time ts Vcc=30V, IC=150mA, 225 ns
Fall time tf IB1= IB2=15mA 60 ns
THERMAL CHARACTERISTICS (TA=25°
°°
°C, unless otherwise noted)
Total Device Dissipation
Derate above 25°C
PD 350
2.8
mW
mW/°C
Thermal resistance, junction to
Ambient
RθJA 357
°C/W
*Pulse test: Pulse Width ≤ 300µs, Duty Cycle ≤ 2.0%