2N4403 / MMBT4403
Symbol Parameter Value Units
VCEO Collec tor-Em i tter Voltage 40 V
VCBOCollector-Base Voltage40V
VEBO Emi tter-Base Voltage 5.0 V
ICCollector Current - Continuous600mA
TJ, Tstg Operating and Storage Junction Temperature Range -55 to +150 °C
PNP General Purpose Amplifier
This device is designed for use as a general purpose amplifier
and switch requiring collector currents to 500 mA.
Absolute Maximum Ratings* TA = 25°C unless otherwise noted
*These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.
NOTES:
1) These ratings are based on a maximum junction temperature of 150 degrees C.
2) These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations.
2N4403
CBETO-92
MMBT4403
C
B
E
SOT-23
Mark: 2T
Thermal Characteristics TA = 25°C unless otherwise noted
Symbol Characteristic Max Units
2N4403 *MMBT4403
PDTotal Device Dissipation
Derate above 25°C625
5.0 350
2.8 mW
mW/°C
RθJC Thermal Res i stance, Junction t o Case 83.3 °C/W
RθJA Thermal Res i stance, Junction t o Ambient 200 357 °C/W
*Device mounted on FR-4 PCB 1.6" X 1.6" X 0.06."
2001 Fairchild Semiconductor Corporation 2N4403/MMBT4403, Rev. C
2N4403 / MMBT4403
Electrical Characteristics TA = 25°C unless otherwise noted
OFF CHARACTERISTICS
ON CHARACTERISTICS
SMALL SIGNAL CHARACTERISTICS
SWITCHING CHARACTERISTICS
tdDelay Time VCC = 30 V, I C = 150 mA, 15 ns
trRise Time IB1 = 15 m A 20 ns
tsStorage TimeVCC = 30 V, IC = 150 mA225ns
tfFall Time IB1 = IB2 = 15 m A 30 ns
*Pulse Test: Pulse Width £ 300 ms, Duty Cycle £ 2.0%
Symbol Parameter Test Conditions Min Max Units
V(BR)CEO Coll ector-Emitt er Breakdown
Voltage* IC = 1.0 mA, IB = 040V
V(BR)CBOCollector-Base Breakdown VoltageIC = 0.1 mA, IE = 040V
V(BR)EBO Emitter-Base Breakdown Voltage IE = 0.1 A, I C = 0 5.0 V
IBEX Base Cutoff Current VCE = 35 V, VEB = 0. 4 V 0.1 µA
ICEX Collector Cutoff Current VCE = 35 V, V BE = 0.4 V 0.1 µA
hFE DC Current Gain IC = 0.1 mA, VCE = 1.0 V
IC = 1.0 mA , VCE = 1.0 V
IC = 10 mA, V CE = 1.0 V
IC = 150 mA, V CE = 2.0 V*
IC = 500 mA, V CE = 2.0 V*
30
60
100
100
20 300
VCE(sat)Collec tor-Em i tter Sat uration
Voltage* IC = 150 mA, IB = 15 mA
IC = 500 mA, I B = 50 mA 0.4
0.75 V
V
VBE(sat)Base-Emitter Saturation Voltage IC = 150 mA, I B = 15 mA*
IC = 500 mA, I B = 50 mA 0.75 0.95
1.3 V
V
PNP General Purpose Amplifier
(continued)
fTCurrent Gain - Bandwidth P roduct IC = 20 mA , VCE = 10 V,
f = 100 MHz 200 MHz
Ccb Collector-B ase Capacitance VCB = 10 V, I E = 0,
f = 140 kHz 8.5 pF
Ceb Emi t ter-Base Capaci tance VBE = 0.5 V, I C = 0,
f = 140 kHz 30 pF
hie Input Impedance IC = 1.0 mA, VCE = 10 V ,
f = 1.0 kHz 1.5 15 kΩ
hre Voltage Feedbac k Ratio IC = 1.0 mA, VCE = 10 V,
f = 1.0 kHz 0.1 8.0 x 10-4
hfe Smal l -S i gnal Current Gain IC = 1.0 mA , V CE = 10 V,
f = 1.0 kHz 60 500
hoe Output Admitt ance IC = 1.0 mA, VCE = 10 V ,
f = 1.0 kHz 1.0 100 µmhos
Typical Characteristics
Typical Pulsed Current Gain
vs Collector Current
0.1 0.3 1 3 10 30 100 300
0
100
200
300
400
500
I - COLLECTOR CURRENT (mA)
h - TYPICA L PULSED CURRENT GAIN
C
FE
125 °C
25 °C
- 4 0 ° C
V = 5 V
CE
Input and Output Capacitance
vs Reverse Bias Voltage
0.1 1 10 50
0
4
8
12
16
20
REVERSE BIAS VOLTAGE (V)
CAP ACIT ANCE (pF)
Cob
C
ib
C o llector -C u toff Cu r rent
vs A mb ient Temperatu re
25 50 75 100 125
0.01
0.1
1
10
100
T - AMBIE NT TEMP E RATURE ( C)
I - C OLLECTOR CURR EN T (nA)
A
CBO
°
V = 35V
CB
C o ll ecto r -Emitter Satur ati o n
Vo ltag e vs Collector Cur rent
110100500
0
0.1
0.2
0.3
0.4
0.5
I - COLLECTO R C UR RENT (m A)
V - COLLEC TOR EMITTER VOLTA GE (V)
C
CESAT
β= 10
25 °C
- 40 °C
125 °C
B ase-Emitter Satur ati o n
Vo ltag e vs C o llector Cu rrent
110100500
0
0.2
0.4
0.6
0.8
1
I - COLLEC TOR CUR RE NT (mA)
V - BA SE EMITTER VOLTAGE (V)
C
BESAT
25 °C
- 40 °C
125 °C
β= 10
Base Emitter ON Vol tage vs
C o ll ector Cu r rent
0.1 1 10 25
0
0.2
0.4
0.6
0.8
1
I - COLLEC TOR CURRENT (mA)
V - B ASE EMITTER ON VOLTAGE (V)
C
BE( ON)
V = 5V
CE
25 °C
- 40 °C
125°C
PNP General Purpose Amplifier
(continued)
2N4403 / MMBT4403
Typical Characteristics (continued)
S wit c hing Tim es
vs Collector Curren t
10 100 1000
0
50
100
150
200
250
I - COLL ECTOR CU RRENT (mA)
TIME ( nS)
I = I =
tr
t
s
B1
C
B2 Ic
10
V = 15 V
cc
tf
td
Tu r n On and Turn O f f Times
vs Col lector C urre nt
10 100 1000
0
100
200
300
400
500
I - COLLECTO R CURRENT (m A)
TIME ( nS)
I = I =
ton
t
off
B1
C
B2 Ic
10
V = 15 V
cc
Po we r Dissipat ion vs
Am bient Temperature
0 25 50 75 100 125 150
0
0.25
0.5
0.75
1
TEMPERATUR E ( C)
P - POWER DISSIPATION (W)
D
o
SOT-223
TO-92
SOT-23
Ri se Time vs Coll ect or
and Turn On Base Currents
10 100 500
1
2
5
10
20
50
I - COLLECTOR CURRENT (mA)
I - TU RN 0 N BASE CURRENT (mA)
30 ns
C
t = 15 V
r
B1
60 ns
PNP General Purpose Amplifier
(continued)
2N4403 / MMBT4403
Typical Common Emitter Characteristics (f = 1.0kHz)
Common Emitte r Characteri st ics
12 51020 50
0.1
0.2
0.5
1
2
5
I - CO L L ECTOR CURR EN T ( mA)
CHAR. RELATIVE TO VAL UES AT I = - 10mA
V = -10 V
CE
C
C
T = 25 C
A o
hoe
h re
hfe
hie
_ _ _ _ _ _
Commo n Emitte r Charact eri s t ics
-20-16-12-8-4
0.8
0.9
1
1.1
1.2
1.3
V - COLL ECTOR VOLTA GE ( V)
CHAR. RELATIVE TO VALUES AT V = -10V
I = -10 mA
C
CE
CE
T = 25 C
A o
hoe
h an d h
re
hfe
hie
oe hfe
hie
h re
Commo n Emitter Characte ri st ics
-40-200 20406080100
0.5
0.6
0.7
0.8
0.9
1
1.1
1.2
1.3
1.4
1.5
T - AMBIENT TEMP ERATU RE ( C)
CHAR. RE LATIVE TO VALUES AT T = 25 C
V = -10 V
CE
A
A
hoe
h re
hfe
hie
o
o
I = -10 mA
C hfe
hie
h re
hoe
PNP General Purpose Amplifier
(continued)
2N4403 / MMBT4403
Test Circuits
FIGURE 1: Saturated Turn-On Switching Time Test Circuit
FIGURE 2: Saturated T urn-Off Switching T ime T est Circuit
1.0 KΩΩ
ΩΩ
Ω
- 6.0 V
1.5 V
1.0 KΩΩ
ΩΩ
Ω
- 30 V
0
≤≤
≤≤
≤ 200ns
≤≤
≤≤
≤ 200ns
- 16 V
0
50 ΩΩ
ΩΩ
Ω
200 ΩΩ
ΩΩ
Ω
1 KΩΩ
ΩΩ
Ω37 ΩΩ
ΩΩ
Ω
50 ΩΩ
ΩΩ
Ω
- 30 V
NOTE: BVEBO = 5.0 V
PNP General Purpose Amplifier
(continued)
2N4403 / MMBT4403
DISCLAIMER
FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER
NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. FAIRCHILD
DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT
OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT
RIGHTS, NOR THE RIGHTS OF OTHERS.
TRADEMARKS
The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is
not intended to be an exhaustive list of all such trademarks.
LIFE SUPPORT POLICY
FAIRCHILD’S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT
DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR CORPORATION.
As used herein:
1. Life support devices or systems are devices or
systems which, (a) are intended for surgical implant into
the body, or (b) support or sustain life, or (c) whose
failure to perform when properly used in accordance
with instructions for use provided in the labeling, can be
reasonably expected to result in significant injury to the
user.
2. A critical component is any component of a life
support device or system whose failure to perform can
be reasonably expected to cause the failure of the life
support device or system, or to affect its safety or
effectiveness.
PRODUCT STATUS DEFINITIONS
Definition of Terms
Datasheet Identification Product Status Definition
Advance Information
Preliminary
No Identification Needed
Obsolete
This datasheet contains the design specifications for
product development. Specifications may change in
any manner without notice.
This datasheet contains preliminary data, and
supplementary data will be published at a later date.
Fairchild Semiconductor reserves the right to make
changes at any time without notice in order to improve
design.
This datasheet contains final specifications. Fairchild
Semiconductor reserves the right to make changes at
any time without notice in order to improve design.
This datasheet contains specifications on a product
that has been discontinued by Fairchild semiconductor.
The datasheet is printed for reference information only.
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In Design
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