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DATA SH EET
Product data sheet
Supersedes data of 2000 Jul 28 2004 Jan 16
DISCRETE SEMICONDUCTORS
BCX19
NPN general purpose transistor
2004 Jan 16 2
NXP Semiconductors Product data sheet
NPN general purpose transistor BCX19
FEATURES
High current (500 mA)
Low voltage (45 V).
APPLICATIONS
General purpose amplification
Saturated switching and driver applications.
DESCRIPTION
NPN transistor in a SOT23 plastic package.
PNP complement: BCX17.
MARKING
Note
1. * = p : Made in Hong Kong .
* = t : Made in Malaysia.
* = W : Made in China.
PINNING
TYPE NUMBER MARKING CODE(1)
BCX19 U1*
PIN DESCRIPTION
1base
2emitter
3collector
Fig.1 Simplified outline (SOT23) and sy mbol.
handbook, halfpage
21
3
MAM255
Top view
2
3
1
ORDERING INFORMATION
LIMITING VALUES
In accordance with th e Absolute Maximum Ratin g S ystem (IEC 60134).
Note
1. Transistor mounted on an FR4 printed-circuit board.
TYPE
NUMBER PACKAGE
NAME DESCRIPTION VERSION
BCX19 plastic surface mounted p a ckage; 3 leads SOT23
SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT
VCBO collector-base volta ge open emitter 50 V
VCEO collector-emitter voltage open base; IC = 10 mA 45 V
VEBO emitter-base voltage open collector 5 V
ICcollector current (DC) 500 mA
ICM peak collector current 1 A
IBM peak base current 200 mA
Ptot total power dissipation Tamb 25 °C; note 1 250 mW
Tstg storage temperature 65 +150 °C
Tjjunction temperature 150 °C
Tamb operating ambient temperature 65 +150 °C
2004 Jan 16 3
NXP Semiconductors Pr oduct data shee t
NPN general purpose transistor BCX19
THERMAL CHARACTE RISTICS
Note
1. Transistor mounted on an FR4 printed-circuit board.
CHARACTERISTICS
Tj = 25 °C unless otherwise specified.
Notes
1. Pulse test: tp 300 μs; δ 0.02.
2. VBE decreases by approximately 2 mV/°C with increasing temperatu re.
SYMBOL PARAMETER CONDITIONS VALUE UNIT
Rth(j-a) thermal resistance from junction to ambient note 1 500 K/W
SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT
ICBO collector cut-off current IE = 0; VCB = 20 V 100 nA
IE = 0; VCB = 20 V; Tj = 150 °C 5μA
IEBO emitter cut-off current IC = 0; VEB = 5 V 100 nA
hFE DC current gain VCE = 1 V; note 1
IC = 100 mA 100 600
IC = 300 mA 70
IC = 500 mA 40
VCEsat collector-emitter saturation
voltage IC = 500 mA; IB = 50 mA; note 2 620 mV
VBE base-emitter vo ltage IC = 500 mA; VCE = 1 V; notes 1 and 2 1.2 V
Cccollector capacitance IE = Ie = 0; VCB = 10 V; f = 1 MHz 5pF
fTtransition freque ncy IC = 10 mA; VCE = 5 V; f = 100 MHz 100 MHz
2004 Jan 16 4
NXP Semiconductors Pr oduct data shee t
NPN general purpose transistor BCX19
PACKAGE OUTLINE
UNIT A
1
max. b
p
cDE e
1
H
E
L
p
Qwv
REFERENCES
OUTLINE
VERSION EUROPEAN
PROJECTION ISSUE DATE
04-11-04
06-03-16
IEC JEDEC JEITA
mm 0.1 0.48
0.38 0.15
0.09 3.0
2.8 1.4
1.2 0.95
e
1.9 2.5
2.1 0.55
0.45 0.1
0.2
DIMENSIONS (mm are the original dimensions)
0.45
0.15
SOT23 TO-236AB
bp
D
e1
e
A
A1
Lp
Q
detail X
HE
E
w
M
v
M
A
B
AB
0 1 2 mm
scale
A
1.1
0.9
c
X
12
3
Plastic surface-mounted package; 3 leads SOT2
3
2004 Jan 16 5
NXP Semiconductors Pr oduct data shee t
NPN general purpose transistor BCX19
DATA SHEET STATUS
Notes
1. Please consult the most recently issued document before initiating or completing a design.
2. The product s ta tus of device(s ) described in this document may have changed since this document was published
and may differ in case of multiple devices. The latest product status information is available on the Internet at
URL http://www.nxp.com.
DOCUMENT
STATUS(1) PRODUCT
STATUS(2) DEFINITION
Objective data sheet Development This document contains data from the objective specification for pro duct
development.
Preliminary data sheet Qualification This document contains data from the preliminary specification.
Product data sheet Production T his document contains the product specification.
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General Information in this document is believed to be
accurate and reliable . H ow ev er, NXP Semiconductors
does not give any representations or warranties,
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consequenc es of use of such information.
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Applications Applications that are described herein for
any of these products are for illustrative purposes only.
NXP Semiconductors makes no representation or
warranty that such applications will be suitable for the
specified use witho ut fu rth e r testing or modification .
Limiting values Stress above one or more limiting
values (as defined in the Absolute Maximum Ratings
System of IEC 60134) may cause permanent damage to
the device. Limiting values are stress ratings only and
operation of the device at these or any other conditions
above those given in the Characteristics sections of this
document is not implied. Exposure to limiting values for
extended periods may affect device reliability.
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case of any incons istency or conflict betw een information
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Quick refer ence data The Quick reference data is an
extract of th e product data given in the Limiting values an d
Characteristics sections of this docu ment, and as such is
not complete, exhaus tive or legally binding.
NXP Semiconductors
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© NXP B.V. 2009
All rights are reserved. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner.
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Customer notification
This data sheet was changed to reflect the new company name NXP Semiconductors, including new legal
definitions and disclaimer s. No changes were made to the technical content, except for package outline
drawings which were updated to the latest version.
Printed in The Netherlands R75/05/pp6 Date of release: 2004 Jan 16 Document orde r number: 9397 750 12407