BYV29, BYV29F, BYV29B, UG8GT, UGF8GT, UGB8GT Series
Vishay Semiconductors
formerly General Semiconductor
Document Number 88557 www.vishay.com
17-Sep-03 1
Ultrafast Rectifier Reverse Voltage 300 to 400V
Forward Current 8.0A
Reverse Recovery Time 35ns
Mounting Pad Layout TO-263AB
0.380 (9.65)
0.411 (10.45)
0.320 (8.13)
0.360 (9.14)
0.591 (15.00)
0.624 (15.85)
12
0.245 (6.22)
MIN
K
0.027 (0.686)
0.037 (0.940)
0.105 (2.67)
0.095 (2.41) 0.205 (5.20)
0.195 (4.95)
K
0.160 (4.06)
0.190 (4.83)
0.045 (1.14)
0.055 (1.40)
0.021 (0.53)
0.014 (0.36)
0.110 (2.79)
0.140 (3.56)
0.090 (2.29)
0.110 (2.79)
0.047 (1.19)
0.055 (1.40)
PIN 1
PIN 2 K - HEATSINK
0-0.01 (0-0.254)
0.060 (1.52)
0.405 (10.27)
0.383 (9.72)
0.191 (4.85)
0.171 (4.35)
0.600 (15.5)
0.580 (14.5)
0.560 (14.22)
0.530 (13.46)
0.037 (0.94)
0.027 (0.69)
0.140 (3.56)
0.130 (3.30)
0.350 (8.89)
0.330 (8.38)
0.188 (4.77)
0.172 (4.36)
0.110 (2.80)
0.100 (2.54)
0.131 (3.39)
0.122 (3.08)
0.110 (2.80)
0.100 (2.54)
0.022 (0.55)
0.014 (0.36)
0.205 (5.20)
0.195 (4.95)
12
PIN
DIA.
DIA.
PIN 1
PIN 2
0.676 (17.2)
0.646 (16.4)
ITO-220AC (BYV29F, UGF8 Series)
TO-220AC (BYV29, UG8 Series)
Dimensions in inches
and (millimeters)
TO-263AB (BYV29B, UGB8 Series)
0.154 (3.91)
0.148 (3.74) DIA.
0.113 (2.87)
0.103 (2.62)
0.185 (4.70)
0.175 (4.44)
0.055 (1.39)
0.045 (1.14)
0.145 (3.68)
0.135 (3.43)
0.350 (8.89)
0.330 (8.38)
0.160 (4.06)
0.140 (3.56)
0.037 (0.94)
0.027 (0.68)
0.205 (5.20)
0.195 (4.95)
0.560 (14.22)
0.530 (13.46)
0.022 (0.56)
0.014 (0.36)
0.110 (2.79)
0.100 (2.54)
12 1.148 (29.16)
1.118 (28.40)
0.105 (2.67)
0.095 (2.41)
0.410 (10.41)
0.390 (9.91) 0.635 (16.13)
0.625 (15.87)
0.603 (15.32)
0.573 (14.55)
PIN
0.415 (10.54) MAX.
PIN 1
PIN 2 CASE
0.370 (9.40)
0.360 (9.14)
Features
• Plastic package has Underwriters Laboratories
Flammability Classification 94V-0
• Ideally suited for freewheeling diode power factor
correction applications
• Soft recovery characteristics
• Excellent high temperature switching
• Optimized to reduce switching losses
• High temperature soldering in accordance with
CECC 802 / Reflow guaranteed
• Glass passivated chip junction
Mechanical Data
Case: JEDEC TO-220AC, ITO-220AC & TO-263AB
molded plastic body
Terminals: Plated leads, solderable per MIL-STD-750,
Method 2026
Polarity: As marked
Mounting Position: Any
Mounting Torque: 10 in-lbs maximum
Weight: 0.08 oz., 2.24 g
BYV29, BYV29F, BYV29B, UG8GT, UGF8GT, UGB8GT Series
Vishay Semiconductors
formerly General Semiconductor
www.vishay.com Document Number 88557
217-Sep-03
Maximum Ratings (TC= 25°C unless otherwise noted)
UG8FT UG8GT
Parameter Symbol
BYV29-300 BYV29-400
Unit
Maximum repetitive peak reverse voltage VRRM 300 400 V
Maximum working reverse voltage VRWM 300 400 V
Maximum RMS voltage VRMS 210 280 V
Maximum DC blocking voltage VDC 300 400 V
Maximum average forward rectified current at TC= 100°C IF(AV) 8.0 A
Peak forward surge current
8.3ms single half sine-wave superimposed IFSM 110 A
on rated load (JEDEC Method) at TC= 100°C
Operating junction and storage temperature range TJ, TSTG –40 to +150 °C
RMS Isolation voltage (UGF & BYV29F types only) 4500(1)
from terminals to heatsink with t = 1.0 second, RH ≤30% VISOL 3500(2) V
1500(3)
Electrical Characteristics(TC= 25°C unless otherwise noted)
UG8FT UG8GT
Parameter Symbol
BYV29-300 BYV29-400
Unit
Maximum instantaneous forward voltage(4)
IF= 8A, TJ = 25°C VF1.25 V
IF= 8A, TJ = 150°C 1.03
IF= 20A, TJ = 25°C 1.40
Maximum DC reverse current at VRRM TC = 25°C 10
TC = 100°C IR350 µA
Maximum reverse recovery time at
IF = 0.5A, IR= 1.0A, Irr = 0.25A trr 35 ns
Maximum reverse recovery time at 50
IF = 1.0A, di/dt = 100A/µs, VR = 30V, Irr = 0.1 IRM trr ns
Maximum reverse recovery current at IRM 5.5
IF = 10A, di/dt = 50A/µs, VR = 30V, TC= 100°C A
Maximum recovered stored charged at Qrr 55
IF = 2A, di/dt = 20A/µs, VR = 30V, Irr = 0.1 IRM nC
Thermal Characteristics (TC= 25°C unless otherwise noted) UG8 UGF8 UGB8
Parameter Symbol BYV29 BYV29F BYV29B Unit
Typical thermal resistance from junction to case RΘJC 2.5 5.5 2.5 °C/W
Notes:
(1) Clip mounting (on case), where lead does not overlap heatsink with 0.110” offset
(2) Clip mounting (on case), where leads do overlap heatsink
(3) Screw mounting with 4-40 screw, where washer diameter is ≤ 4.9 mm (0.19”)
(4) Pulse test: 300µs pulse width, 1% duty cycle
0
25
50
75
100
125
150
1 10010
Fig. 2 – Maximum Non-Repetitive Peak
Forward Surge Current
Peak Forward Surge Current (A)
Number of Cycles at 60 HZ
0
6.0
8.0
10
12
0 25 50 75 100 125 150 175
Fig. 1 – Maximum Forward Current
Derating Curve
Average Forward Rectified Current (A)
Case Temperature (°C)
0.40.2 0.6 0.8 1.0 1.2 1.4 1.6
Instantaneous Forward Voltage (V)
20 6040 10080
Fig. 4 – Typical Reverse Leakage
Characteristics
Instantaneous Reverse Leakage Current
(µA)
Percent of Rated Peak Reverse Voltage (%)
4.0
2.0
Resistive or Inductive Load
0.01
0.1
10
100
1
Instantaneous Forward Current (A)
TJ = 25°C
TJ = 100°C
TJ = 125°C
Reverse Voltage (V)
Junction Capacitance (pF)
0.1 1 10 100
100
10
1
0.01
0.1
10
1
100
1,000
Fig. 6 – Typical Junction Capacitance
TJ = 25°C
f = 1.0 MHZ
Vsig = 50mVp-p
Fig. 3 – Typical Instantaneous
Forward Characteristics
TC = 100°C
8.3ms Single Half Sine-Wave
(JEDEC Method)
TJ = 25° C
TJ = 125°C
TJ = 100°C
Fig 5 — Reverse Switching
Characteristics Per Leg
025 50
20
40
60
80
100
120
140
160
75 100 125
Stored Charge/Reverse Recovery Time
(nC/ns)
di/dt = 150A/µs
di/dt = 150A/µs
di/dt = 100A/µs
di/dt = 100A/µs
di/dt = 20A/µs
di/dt = 50A/µs
di/dt = 20A/µs
Junction Temperature (°C)
trr
Qrr
Ratings and
Characteristic Curves (TA= 25°C unless otherwise noted)
BYV29, BYV29F, BYV29B, UG8GT, UGF8GT, UGB8GT Series
Vishay Semiconductors
formerly General Semiconductor
Document Number 88557 www.vishay.com
17-Sep-03 3
