DS18004 Rev. 19 - 2 1 of 3 BZT52C2V4 - BZT52C39
·Planar Die Construction
·500mW Power Dissipation on Ceramic PCB
·General Purpose, Medium Current
·Ideally Suited for Automated Assembly
Processes
Features
Maximum Ratings @ TA= 25°C unless otherwise specified
Characteristic Symbol Value Unit
Forward Voltage (Note 2) @ IF= 10mA VF0.9 V
Power Dissipation (Note 1) Pd500 mW
Thermal Resistance, Junction to Ambient Air (Note 1) RqJA 305 °C/W
Operating and Storage Temperature Range Tj, TSTG -65 to +150 °C
Notes: 1. Device mounted on ceramic PCB; 7.6mm x 9.4mm x 0.87mm with pad areas 25mm2.
2. Short duration test pulse used to minimize self-heating effect.
Mechanical Data
BZT52C2V4 - BZT52C39
SURFACE MOUNT ZENER DIODE
A
B
C
D
E
G
a
H
J
SOD-123
Dim Min Max
A 3.55 3.85
B 2.55 2.85
C 1.40 1.70
D — 1.35
E 0.55 Typical
G 0.25 —
H 0.11 Typical
J — 0.10
a0°8°
All Dimensions in mm
·Case: SOD-123, Plastic
·UL Flammability Classification Rating 94V-0
·Moisture Sensitivity: Level 1 per J-STD-020A
·Terminals: Solderable per MIL-STD-202,
Method 208
·Polarity: Cathode Band
·Marking: See Below
·Weight: 0.01 grams (approx.)
·Ordering Information: See Page 4
Marking Information
XX
YM
XX = Product Type Marking Code (See Page 2)
YM = Date Code Marking
Y = Year (ex: N = 2002)
M = Month (ex: 9 = September)
Date Code Key
Year 1998 1999 2000 2001 2002 2003 2004 2005
Code JKL M N
PRS
Month Jan Feb March Apr May Jun Jul Aug Sep Oct Nov Dec
Code 1234 567
89 OND
DS18004 Rev. 19 - 2 2 of 3 BZT52C2V4 - BZT52C39
Type
Number
Marking
Code
Zener Voltage Range
(Note 2)
Maximum Zener
Impedance (Note 3)
Maximum
Reverse
Current
(Note 2)
Typical
Temperature
Coefficient
@I
ZTC
mV/°C
Test
Current
IZTC
Vz@IZT IZT ZZT @ IZT ZZK @I
ZK IZK IR@ VR
Nom (V) Min (V) Max (V) mA WmA uA V Min Max mA
BZT52C2V4 WX 2.4 2.2 2.6 5 100 600 1.0 50 1.0 -3.5 0 5
BZT52C2V7 W1 2.7 2.5 2.9 5 100 600 1.0 20 1.0 -3.5 0 5
BZT52C3V0 W2 3.0 2.8 3.2 5 95 600 1.0 10 1.0 -3.5 0 5
BZT52C3V3 W3 3.3 3.1 3.5 5 95 600 1.0 5.0 1.0 -3.5 0 5
BZT52C3V6 W4 3.6 3.4 3.8 5 90 600 1.0 5.0 1.0 -3.5 0 5
BZT52C3V9 W5 3.9 3.7 4.1 5 90 600 1.0 3.0 1.0 -3.5 0 5
BZT52C4V3 W6 4.3 4.0 4.6 5 90 600 1.0 3.0 1.0 -3.5 0 5
BZT52C4V7 W7 4.7 4.4 5.0 5 80 500 1.0 3.0 2.0 -3.5 0.2 5
BZT52C5V1 W8 5.1 4.8 5.4 5 60 480 1.0 2.0 2.0 -2.7 1.2 5
BZT52C5V6 W9 5.6 5.2 6.0 5 40 400 1.0 1.0 2.0 -2 2.5 5
BZT52C6V2 WA 6.2 5.8 6.6 5 10 150 1.0 3.0 4.0 0.4 3.7 5
BZT52C6V8 WB 6.8 6.4 7.2 5 15 80 1.0 2.0 4.0 1.2 4.5 5
BZT52C7V5 WC 7.5 7.0 7.9 5 15 80 1.0 1.0 5.0 2.5 5.3 5
BZT52C8V2 WD 8.2 7.7 8.7 5 15 80 1.0 0.7 5.0 3.2 6.2 5
BZT52C9V1 WE 9.1 8.5 9.6 5 15 100 1.0 0.5 6.0 3.8 7.0 5
BZT52C10 WF 10 9.4 10.6 5 20 150 1.0 0.2 7.0 4.5 8.0 5
BZT52C11 WG 11 10.4 11.6 5 20 150 1.0 0.1 8.0 5.4 9.0 5
BZT52C12 WH 12 11.4 12.7 5 25 150 1.0 0.1 8.0 6.0 10.0 5
BZT52C13 WI 13 12.4 14.1 5 30 170 1.0 0.1 8.0 7.0 11.0 5
BZT52C15 WJ 15 13.8 15.6 5 30 200 1.0 0.1 10.5 9.2 13.0 5
BZT52C16 WK 16 15.3 17.1 5 40 200 1.0 0.1 11.2 10.4 14.0 5
BZT52C18 WL 18 16.8 19.1 5 45 225 1.0 0.1 12.6 12.4 16.0 5
BZT52C20 WM 20 18.8 21.2 5 55 225 1.0 0.1 14.0 14.4 18.0 5
BZT52C22 WN 22 20.8 23.3 5 55 250 1.0 0.1 15.4 16.4 20.0 5
BZT52C24 WO 24 22.8 25.6 5 70 250 1.0 0.1 16.8 18.4 22.0 5
BZT52C27 WP 27 25.1 28.9 2 80 300 0.5 0.1 18.9 21.4 25.3 2
BZT52C30 WQ 30 28.0 32.0 2 80 300 0.5 0.1 21.0 24.4 29.4 2
BZT52C33 WR 33 31.0 35.0 2 80 325 0.5 0.1 23.1 27.4 33.4 2
BZT52C36 WS 36 34.0 38.0 2 90 350 0.5 0.1 25.2 30.4 37.4 2
BZT52C39 WT 39 37.0 41.0 2 130 350 0.5 0.1 27.3 33.4 41.2 2
Electrical Characteristics @ TA= 25°C unless otherwise specified
Notes: 1. Device mounted on ceramic PCB; 7.6mm x 9.4mm x 0.87mm with pad areas 25mm2.
2. Short duration test pulse used to minimize self-heating effect.
3. f = 1kHz.
Ordering Information (Note 4)
Device Packaging Shipping
(Type Number)-7* SOD-123 3000/Tape & Reel
* Add “-7” to the appropriate type number in Table 1 above example: 6.2V Zener = BZT52C6V2-7.
Notes: 4. For Packaging Details, go to our website at http://www.diodes.com/datasheets/ap02007.pdf.
DS18004 Rev. 19 - 2 3 of 3 BZT52C2V4 - BZT52C39
0
0.1
0.2
0.3
0.4
0.5
25050
75 100 125 150
P,P
O
WER DISSIPATI
O
N (W)
D
T , AMBIENT TEMPERATURE ( C)
Fig. 1 Power Dissipation vs Ambient Temperature
A°
0.6
0
10
20
30
40
50
01 2 3 4 5 6 78910
I , ZENER
C
URRENT
(
mA
)
Z
V , ZENER VOLTAGE (V)
Fig. 2 Zener Breakdown Characteristics
Z
T = 25°C
jC2V7
C3V3
C3V9
C4V7
C5V6
C6V8
C8V2
C6V2
Test Current I
5.0mA
Z
0
10
20
30
0
I , ZENER CURRENT (mA)
Z
V , ZENER VOLTAGE (V)
Fi
g
. 3 Zener Breakdown Characteristics
Z
10 20 30 40
T = 25°C
j
Test current I
5mA
Z
Test current I
2mA
Z
C10
C12
C18
C22
C27
C33 C36
C15
0
2
4
6
8
10
10 20 30 40 50 60 70 80 90 100
I , ZENER CURRENT (mA)
Z
V , ZENER VOLTAGE (V)
Fi
g
. 4 Zener Breakdown Characteristics
Z
Test Current I
2mA
Z
C39
T = 25°C
j
C , TOTAL CAPACITANCE (pF)
T
10
100
1000
10 100
1
V , NOMINAL ZENER VOLTAGE (V)
Fig. 5 Total Capacitance vs Nominal Zener Voltage
Z
T = 25 °C
f = 1MHz
j
V=1V
R
V=2V
R
V=1V
R
V=2V
R
