BUZ 111SL SIPMOS Power Transistor Features Product Summary * N channel Drain source voltage VDS * Drain-Source on-state resistance RDS(on) 0.007 Continuous drain current ID Enhancement mode * Avalanche rated 55 V 80 A * Logic Level * dv/dt rated * 175C operating temperature Type Package Ordering Code Packaging BUZ111SL P-TO220-3-1 Q67040-S4002-A2 Tube BUZ111SL E3045A P-TO263-3-2 Q67040-S4002-A6 Tape and Reel BUZ111SL E3045 P-TO263-3-2 Q67040-S4002-A5 Tube Pin 1 G Pin 2 Pin 3 D S Maximum Ratings, at Tj = 25 C, unless otherwise specified Parameter Symbol Continuous drain current ID Value A TC = 25 C, 1) 80 TC = 100 C 80 Pulsed drain current Unit IDpulse 320 EAS 700 EAR 30 dv/dt 6 Gate source voltage VGS 20 V Power dissipation Ptot 300 W -55... +175 C TC = 25 C Avalanche energy, single pulse mJ ID = 80 A, VDD = 25 V, RGS = 25 Avalanche energy, periodic limited by Tjmax Reverse diode dv/dt kV/s IS = 80 A, VDS = 40 V, di/dt = 200 A/s, Tjmax = 175 C TC = 25 C Operating and storage temperature T j , Tstg IEC climatic category; DIN IEC 68-1 Data Sheet 55/175/56 1 05.99 BUZ 111SL Thermal Characteristics Symbol Parameter Values Unit min. typ. max. Characteristics Thermal resistance, junction - case RthJC - - 0.5 Thermal resistance, junction - ambient, leded RthJA - - 62 SMD version, device on PCB: RthJA @ min. footprint - - 62 @ 6 cm 2 cooling area2) - - 40 K/W Electrical Characteristics, at Tj = 25 C, unless otherwise specified Symbol Parameter Values Unit min. typ. max. V(BR)DSS 55 - - VGS(th) 1.2 1.6 2 Static Characteristics Drain- source breakdown voltage V VGS = 0 V, ID = 0.25 mA Gate threshold voltage, VGS = VDS ID = 240 A Zero gate voltage drain current A I DSS VDS = 50 V, VGS = 0 V, T j = 25 C - 0.1 1 VDS = 50 V, VGS = 0 V, T j = 150 C - - 100 - 10 100 Gate-source leakage current I GSS nA VGS = 20 V, VDS = 0 V Drain-Source on-state resistance RDS(on) VGS = 4.5 V, ID = 80 A - 0.0085 0.01 VGS = 10 V, ID = 80 A - 0.0055 0.007 1current limited by bond wire 2 Device on 40mm*40mm*1.5mm epoxy PCB FR4 with 6 cm2 (one layer, 70m thick) copper area for drain connection. PCB is vertical without blown air. Data Sheet 2 05.99 BUZ 111SL Electrical Characteristics, at T j = 25 C, unless otherwise specified Symbol Values Parameter Unit min. typ. max. g fs 30 95 - S Ciss - 3850 4800 pF Coss - 1090 1357 Crss - 570 715 td(on) - 30 45 tr - 37 56 td(off) - 70 105 tf - 36 55 Dynamic Characteristics Transconductance VDS2*ID*RDS(on)max , ID = 80 A Input capacitance VGS = 0 V, VDS = 25 V, f = 1 MHz Output capacitance VGS = 0 V, VDS = 25 V, f = 1 MHz Reverse transfer capacitance VGS = 0 V, VDS = 25 V, f = 1 MHz Turn-on delay time ns VDD = 30 V, VGS = 4.5 V, ID = 80 A, RG = 1.3 Rise time VDD = 30 V, VGS = 4.5 V, ID = 80 A, RG = 1.3 Turn-off delay time VDD = 30 V, VGS = 4.5 V, ID = 80 A, RG = 1.3 Fall time VDD = 30 V, VGS = 4.5 V, ID = 80 A, RG = 1.3 Data Sheet 3 05.99 BUZ 111SL Electrical Characteristics, at T j = 25 C, unless otherwise specified Parameter Symbol Values Unit min. typ. max. Qgs - 12 18 Qgd - 61 91.5 Qg - 155 232 V(plateau) - 3.4 - V IS - - 80 A I SM - - 320 VSD - 1.25 1.8 V t rr - 105 157 ns Q rr - 0.31 0.47 C Dynamic Characteristics Gate to source charge nC VDD = 40 V, ID = 80 A Gate to drain charge VDD = 40 V, ID = 80 A Gate charge total VDD = 40 V, ID = 80 A, V GS = 0 to 10 V Gate plateau voltage VDD = 40 V, ID = 80 A Reverse Diode Inverse diode continuous forward current TC = 25 C Inverse diode direct current,pulsed TC = 25 C Inverse diode forward voltage VGS = 0 V, I F = 160 A Reverse recovery time VR = 30 V, IF=IS , diF/dt = 100 A/s Reverse recovery charge VR = 30 V, IF=l S , diF/dt = 100 A/s Data Sheet 4 05.99 BUZ 111SL Power Dissipation Drain current Ptot = f (TC) ID = f (TC ) parameter: VGS 10 V BUZ111SL BUZ111SL 320 90 W A 70 60 200 ID Ptot 240 50 160 40 120 30 80 20 40 10 0 0 20 40 60 80 0 0 100 120 140 160 C 190 20 40 60 80 100 120 140 160 C 190 TC TC Safe operating area Transient thermal impedance I D = f (V DS) ZthJC = f (tp ) parameter : D = 0 , T C = 25 C parameter : D = tp /T 10 3 BUZ111SL 10 1 BUZ111SL K/W tp = 29.0s 10 0 /I D A 10 -1 R DS (o n) ID = V Z thJC 100 s DS 10 2 10 -2 D = 0.50 0.20 1 ms 10 1 10 -3 0.10 10 ms 0.05 DC 10 0 -1 10 10 0 10 1 V 0.02 10 2 VDS Data Sheet 10 -4 single pulse 10 -5 -7 10 10 -6 10 -5 0.01 10 -4 10 -3 10 -2 s 10 0 tp 5 05.99 BUZ 111SL Typ. output characteristics Typ. drain-source-on-resistance I D = f (VDS) RDS(on) = f (ID) parameter: tp = 80 s parameter: V GS BUZ111SL BUZ111SL Ptot = 300W A 0.032 b k l j i hg f 160 VGS [V] a 2.5 b 3.0 c 3.5 d d 4.0 ID 140 120 100 80 c 60 40 e 4.5 f 5.0 g 5.5 h 6.0 i 6.5 j 7.0 k 8.0 l 10.0 c d e 0.024 RDS(on) 190 0.020 0.016 0.012 e f g i jh k l 0.008 b 20 0.004 VGS [V] = b 3.0 a 0 0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 V 5.0 0.000 0 VDS c 3.5 20 d 4.0 e f 4.5 5.0 40 60 g 5.5 h i 6.0 6.5 80 j 7.0 100 k l 8.0 10.0 A 140 ID Typ. transfer characteristics I D= f (VGS) Typ. forward transconductance parameter: tp = 80 s VDS 2 x I D x RDS(on)max gfs = f(ID); Tj = 25C Parameter: gfs 100 80 S A 80 60 50 gfs ID 70 60 50 40 40 30 30 20 20 10 0 1.0 10 1.5 2.0 2.5 3.0 V 0 0 4.0 VGS Data Sheet 10 20 30 40 50 A 70 ID 6 05.99 BUZ 111SL Gate threshold voltage Drain-source on-resistance VGS(th) = f (Tj) RDS(on) = f (Tj) parameter : VGS = V DS, ID = 240 A parameter : ID = 80 A, VGS = 4.5 V BUZ111SL 3.0 V 0.034 2.4 VGS(th) RDS(on) 0.028 0.024 0.020 2.2 2.0 1.8 1.6 1.4 0.016 98% 1.2 typ 1.0 0.012 max 0.8 0.008 0.6 typ 0.4 0.004 0.000 -60 0.2 min 0.0 -60 -20 20 60 100 140 C -20 20 60 100 140 200 C 200 Tj Tj Typ. capacitances Forward characteristics of reverse diode C = f (VDS) IF = f (VSD ) parameter: V GS = 0 V, f = 1 MHz parameter: Tj , tp = 80 s 10 5 10 3 pF BUZ111SL A 10 4 IF C 10 2 Ciss Coss 10 3 10 1 Tj = 25 C typ Crss Tj = 175 C typ Tj = 25 C (98%) Tj = 175 C (98%) 10 2 0 10 20 V 10 0 0.0 40 VDS Data Sheet 0.4 0.8 1.2 1.6 2.0 2.4 V 3.0 VSD 7 05.99 BUZ 111SL Avalanche Energy EAS = f (Tj) Typ. gate charge parameter: ID = 80 A, V DD = 25 V RGS = 25 VGS = f (QGate ) parameter: ID puls = 80 A BUZ111SL 750 16 V mJ VGS EAS 12 450 10 8 0,2 VDS max 300 0,8 VDS max 6 4 150 2 0 20 40 60 80 100 120 140 C 0 0 180 Tj 40 80 120 160 nC 240 Q Gate Drain-source breakdown voltage V(BR)DSS = f (Tj) BUZ111SL 66 V V(BR)DSS 64 62 60 58 56 54 52 50 -60 -20 20 60 100 140 C 200 Tj Data Sheet 8 05.99