IPP90R1K2C3
CoolMOS™ Power Transistor
Features
• Lowest figure-of-merit RON x Qg
• Extreme dv/dt rated
• High peak current capability
• Qualified according to JEDEC1) for target applications
• Pb-free lead plating; RoHS compliant
• Ultra low gate charge
CoolMOS™ 900V is designed for:
• Quasi Resonant Flyback / Forward topologies
• PC Silverbox and consumer applications
• Industrial SMPS
Maximum ratings, at TJ=25 °C, unless otherwise specified
Parameter Symbol Conditions Unit
Continuous drain current IDTC=25 °C A
TC=100 °C
Pulsed drain current 2) ID,pulse TC=25 °C
Avalanche energy, single pulse EAS ID=0.92 A, VDD=50 V 68 mJ
Avalanche energy, repetitive tAR
2),3) EAR ID=0.92 A, VDD=50 V
Avalanche current, repetitive tAR
2),3) IAR A
MOSFET dv/dt ruggedness dv/dtVDS=0...400 V V/ns
Gate source voltage VGS static V
AC (f>1 Hz)
Power dissipation Ptot TC=25 °C W
Operating and storage temperature TJ, Tstg °C
Mounting torque M3 and M3.5 screws 60 Ncm
Value
5.1
3.2
10
±30
83
-55 ... 150
0.31
0.92
50
±20
VDS @ TJ=25°C 900 V
RDS(on),max @TJ=25°C 1.2 Ω
Qg,typ 28 nC
Product Summary
PG-TO220
Type Package Marking
IPP90R1K2C3 PG-TO220 9R1K2C
Rev. 1.0 page 1 2008-07-30
IPP90R1K2C3
Maximum ratings, at TJ=25 °C, unless otherwise specified
Parameter Symbol Conditions Unit
Continuous diode forward current ISA
Diode pulse current 2) IS,pulse 11
Reverse diode dv/dt 4) dv/dt 4 V/ns
Parameter Symbol Conditions Unit
min. typ. max.
Thermal characteristics
Thermal resistance, junction - case RthJC - - 1.5 K/W
RthJA leaded - - 62
Soldering temperature,
wavesoldering only allowed at leads Tsold
1.6 mm (0.063 in.)
from case for 10 s - - 260 °C
Electrical characteristics, at TJ=25 °C, unless otherwise specified
Static characteristics
Drain-source breakdown voltage V(BR)DSS VGS=0 V, ID=250 µA 900 - - V
Gate threshold voltage VGS(th) VDS=VGS, ID=0.31 mA 2.5 3 3.5
Zero gate voltage drain current IDSS
VDS=900 V, VGS=0 V,
Tj=25 °C --1µA
VDS=900 V, VGS=0 V,
Tj=150 °C -10-
Gate-source leakage current IGSS VGS=20 V, VDS=0 V - - 100 nA
Drain-source on-state resistance RDS(on)
VGS=10 V, ID=2.8 A,
Tj=25 °C - 0.94 1.2 Ω
VGS=10 V, ID=2.8 A,
Tj=150 °C - 2.5 -
Gate resistance RGf=1 MHz, open drain - 1.3 - Ω
Values
Thermal resistance, junction -
ambient
Value
TC=25 °C
2.8
Rev. 1.0 page 2 2008-07-30
IPP90R1K2C3
Parameter Symbol Conditions Unit
min. typ. max.
Dynamic characteristics
Input capacitance Ciss - 710 - pF
Output capacitance Coss -35-
Effective output capacitance, energy
related 5) Co(er) -23-
Effective output capacitance, time
related 6) Co(tr) -86-
Turn-on delay time td(on) -70-ns
Rise time tr-20-
Turn-off delay time td(off) - 400 -
Fall time tf-40-
Gate Charge Characteristics
Gate to source charge Qgs - 3.2 - nC
Gate to drain charge Qgd -12-
Gate charge total Qg- 28 tbd
Gate plateau voltage Vplateau - 4.5 - V
Reverse Diode
Diode forward voltage VSD
VGS=0 V, IF=2.8 A,
Tj=25 °C - 0.8 1.2 V
Reverse recovery time trr - 310 - ns
Reverse recovery charge Qrr - 3.7 - µC
Peak reverse recovery current Irrm -19-A
6) Co(tr) is a fixed capacitance that gives the same charging time as Coss while VDS is rising from 0 to 50% VDSS.
Values
VGS=0 V, VDS=100 V,
f=1 MHz
VDD=400 V,
VGS=10 V, ID=2.8 A,
RG=81.3 Ω
VDD=400 V, ID=2.8 A,
VGS=0 to 10 V
VGS=0 V, VDS=0 V
to 500 V
5) Co(er) is a fixed capacitance that gives the same stored energy as C
oss while VDS is rising from 0 to 50% VDSS.
VR=400 V, IF=IS,
diF/dt=100 A/µs
3) Repetitive avalanche causes additional power losses that can be calculated as PAV=EAR*f.
4) ISD≤ID, di/dt≤200A/µs, VDClink=400V, Vpeak<V(BR)DSS, TJ<TJ,max, identical low side and high side switch
1) J-STD20 and JESD22
2) Pulse width tp limited by TJ,max
Rev. 1.0 page 3 2008-07-30
IPP90R1K2C3
1 Power dissipation 2 Safe operating area
Ptot=f(TC)ID=f(VDS); TC=25 °C; D=0
parameter: tp
3 Max. transient thermal impedance 4 Typ. output characteristics
ZthJC=f(tP)ID=f(VDS); TJ=25 °C
parameter: D=t p/Tparameter: VGS
0
10
20
30
40
50
60
70
80
90
0 25 50 75 100 125 150
TC [°C]
Ptot [W]
1 µs10 µs
100 µs
1 ms
10 ms
DC
102
101
100
10-1
1 10 100 1000
VDS [V]
ID [A]
single pulse
0.01
0.02
0.05
0.1
0.2
0.5
10-1
10-2
10-3
10-4
10-5
101
100
10-1
10-2
tp [s]
ZthJC [K/W]
4 V
4.5 V
5 V
5.5 V
6 V
8 V
10 V
20 V
0
5
10
15
0 5 10 15 20 25
VDS [V]
ID [A]
limited by on-state
resistance
single pulse
0.01
0.02
0.05
0.1
0.2
0.5
10-5 10-4 10-3 10-2 10-1
10-2
10-1
100
101
tp [s]
ZthJC [K/W]
single pulse
0.01
0.02
0.05
0.1
0.2
0.5
10-1
10-2
10-3
10-4
10-5
101
100
10-1
10-2
tp [s]
ZthJC [K/W]
Rev. 1.0 page 4 2008-07-30
IPP90R1K2C3
5 Typ. output characteristics 6 Typ. drain-source on-state resistance
ID=f(VDS); TJ=150 °C RDS(on)=f(ID); TJ=150 °C
parameter: VGS parameter: VGS
7 Drain-source on-state resistance 8 Typ. transfer characteristics
RDS(on)=f(TJ); ID=2.8 A; VGS=10 V ID=f(VGS); VDS=20V
parameter: TJ
typ
98 %
0
0.5
1
1.5
2
2.5
3
3.5
-60 -20 20 60 100 140 180
Tj [°C]
RDS(on) [Ω]
25 °C
150 °C
0
5
10
15
0246810
VGS [V]
ID [A]
4 V
4.5 V
5 V
5.5 V
6 V
8 V
10 V
20 V
0
1
2
3
4
5
6
7
0 5 10 15 20 25
VDS [V]
ID [A]
4 V
4.5 V
4.8 V
5 V
10 V
0
2
4
6
8
10
12
14
0246810
ID [A]
RDS(on) [Ω]
Rev. 1.0 page 5 2008-07-30
IPP90R1K2C3
9 Typ. gate charge 10 Forward characteristics of reverse diode
VGS=f(Qgate); ID=2.8 A pulsed IF=f(VSD)
parameter: VDD parameter: TJ
11 Avalanche energy 12 Drain-source breakdown voltage
EAS=f(Tj); ID=0.92 A; VDD=50 V VBR(DSS)=f(Tj); ID=0.25 mA
25 °C
150 °C
25 °C, 98%
150 °C, 98%
102
101
100
10-1
0 0.5 1 1.5 2
VSD [V]
IF [A]
400 V
720 V
0
2
4
6
8
10
0102030
Qgate [nC]
VGS [V]
800
850
900
950
1000
1050
-60 -20 20 60 100 140 180
TJ [°C]
VBR(DSS) [V]
0
20
40
60
80
25 50 75 100 125 150
TJ [°C]
EAS [mJ]
Rev. 1.0 page 6 2008-07-30
IPP90R1K2C3
13 Typ. capacitances 14 Typ. Coss stored energy
C=f(VDS); VGS=0 V; f=1 MHz Eoss=f(V DS)
0
1
2
3
4
0 100 200 300 400 500 600
VDS [V]
Eoss [µJ]
Ciss
Coss
Crss
1
10
100
1000
10000
0 100 200 300 400 500 600
VDS [V]
C [pF]
Rev. 1.0 page 7 2008-07-30
IPP90R1K2C3
Definition of diode switching characteristics
Rev. 1.0 page 8 2008-07-30
IPP90R1K2C3
PG-TO220 Outlines
Dimensions in mm/inches
Rev. 1.0 page 9 2008-07-30
IPP90R1K2C3
Published by
Infineon Technologies AG
81726 Munich, Germany
© 2008 Infineon Technologies AG
All Rights Reserved.
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conditions or characteristics. With respect to any examples or hints given herein, any typical
values stated herein and/or any information regarding the application of the device,
Infineon Technologies hereby disclaims any and all warranties and liabilities of any kind,
including without limitation, warranties of non-infringement of intellectual property rights
of any third party.
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on the types in question, please contact the nearest Infineon Technologies Office.
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the express written approval of Infineon Technologies, if a failure of such components can
reasonably be expected to cause the failure of that life-support device or system or to affect
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Rev. 1.0 page 10 2008-07-30
