DS11107 Rev. 9 - 2 1 of 3 BC817-16/-25/-40
BC817-16 / -25 / -40
NPN SURFACE MOUNT SMALL SIGNAL TRANSISTOR
Features
Maximum Ratings @TA = 25°C unless otherwise specified
Notes: 1. Device mounted on Ceramic Substrate 0.7mm; 2.5cm2 area.
2. Short duration pulse test used to minimize self-heating effect.
Characteristic Symbol Value Unit
Collector-Emitter Voltage VCEO 45 V
Emitter-Base Voltage VEBO 5.0 V
Collector Current IC800 mA
Peak Collector Current ICM 1000 mA
Peak Emitter Current IEM 1000 mA
Power Dissipation at TSB = 50°C (Note 1) Pd310 mW
Thermal Resistance, Junction to Substrate Backside (Note 1) RqSB 320 °C/W
Thermal Resistance, Junction to Ambient Air (Note 1) RqJA 403 °C/W
Operating and Storage Temperature Range Tj,T
STG -65 to +150 °C
·Ideally Suited for Automatic Insertion
·Epitaxial Planar Die Construction
·For Switching, AF Driver and Amplifier
Applications
·Complementary PNP Types Available (BC807)
·Case: SOT-23, Molded Plastic
·Case material - UL Flammability Rating
Classification 94V-0
·Moisture sensitivity: Level 1 per J-STD-020A
·Terminals: Solderable per MIL-STD-202, Method
208
·Pin Connections: See Diagram
·Marking (See Page 3): BC817-16 6A, K6A
BC817-25 6B, K6B
BC817-40 6C, K6C
·Ordering & Date Code Information: See Page 3
·Approx. Weight: 0.008 grams
Mechanical Data
Electrical Characteristics @TA = 25°C unless otherwise specified
Characteristic (Note 2) Symbol Min Max Unit Test Condition
DC Current Gain Current Gain Group -16
-25
-40
Current Gain Group -16
-25
-40
hFE
100
160
250
60
100
170
250
400
600
—
—
—
—
VCE = 1.0V, IC = 100mA
VCE = 1.0V, IC = 300mA
Collector-Emitter Saturation Voltage VCE(SAT) — 0.7 V IC = 500mA, IB = 50mA
Base-Emitter Voltage VBE — 1.2 V VCE = 1.0V, IC = 300mA
Collector-Emitter Cutoff Current ICES —100
5.0
nA
µA
VCE = 45V
VCE = 25V, Tj = 150°C
Emitter-Base Cutoff Current IEBO — 100 nA VEB = 4.0V
Gain Bandwidth Product fT100 — MHz VCE = 5.0V, IC = 10mA,
f = 50MHz
Collector-Base Capacitance CCBO —12pF
VCB = 10V, f = 1.0MHz
SOT-23
Dim Min Max
A0.37 0.51
B1.20 1.40
C2.30 2.50
D0.89 1.03
E0.45 0.60
G1.78 2.05
H2.80 3.00
J0.013 0.10
K0.903 1.10
L0.45 0.61
M0.85 0.80
a0°8°
All Dimensions in mm
A
E
JL
TOP VIEW
M
BC
H
G
D
K
C
BE
DS11107 Rev. 9 - 2 2 of 3 BC817-16/-25/-40
10
100
1000
1 10 100 1000
f , GAIN BANDWIDTH PRODUCT (MHz)
T
I , COLLECTOR CURRENT (mA)
C
Fi
g
. 2, Gain-Bandwidth Product vs Collector Current
T = 25°C
A
f = 20MHz
V = 5V
CE
1V
0
0.1
0.2
0.3
0.4
0
.5
110
V , COLLECTOR SATURATION VOLTAGE (V)
CE(SAT)
I , COLLECTOR CURRENT (mA)
C
Fi
g
. 3, Collector Sat. Volta
g
e vs Collector Current
typical
limits
at T = 25°C
A
I / I = 10
CB
150°C
25°C
-50°C
100 1000
0.1
10
100
1000
110
h , DC CURRENT GAIN
FE
I , COLLECTOR CURRENT (mA)
C
Fi
g
. 4, DC Current Gain vs Collector Current
V = 1V
CE
150°C
T = 25°C
A
-50°C
100 10000.1
0
100
200
300
400
5
00
012
I , COLLECTOR CURRENT (mA)
C
V , COLLECTOR-EMITTER VOLTAGE (V)
CE
Fi
g
.5, T
y
pical Emitter-Collector Characteristics
3.2 2.8
2
1.4
1.2
I = 0.2mA
B
0.8
0.6
0.4
1.6
2.4
1.8
0
20
40
60
80
100
01020
I , COLLECTOR CURRENT (mA)
C
V , COLLECTOR-EMITTER VOLTAGE (V)
CE
Fi
g
.6, T
y
pical Emitter-Collector Characteristics
I = 0.05mA
B
0.1
0.15
0.2
0.25
0.3
0.35
0
100
200
300
4
00
0100200
P , POWER DISSIPATION (mW)
d
T , SUBSTRATE TEMPERATURE (°C)
SB
Fi
g
. 1, Power Deratin
g
Curve
See Note 1
DS11107 Rev. 9 - 2 3 of 3 BC817-16/-25/-40
Month Jan Feb March Apr May Jun Jul Aug Sep Oct Nov Dec
Code 1234567
89 OND
Year 1998 1999 2000 2001 2002 2003 2004
Code JKLM N PR
Date Code Key
XXX = Product Type Marking Code (See Page 1), e.g. K6A = BC817-16
YM = Date Code Marking
Y = Year ex: N = 2002
M = Month ex: 9 = September
XXX
YM
Marking Information
Notes: 3. For Packaging Details, go to our website at http://www.diodes.com/datasheets/ap02007.pdf.
* xx = gain group, e.g. BC817-16-7.
Device*Packaging Shipping
BC817-xx-7 SOT-23 3000/Tape & Reel
Ordering Information (Note 3)
