M40Z300MH1F - STMicroelectronics, Inc.

Not recommended for new design

This is information on a product still in production but not recommended for new designs.

October 2010 Doc ID 5679 Rev 5 1/25

M40Z300

M40Z300W

5 V or 3 V NVRAM supervisor for up to 8 LPSRAMs

Features

■Converts low power SRAM into NVRAMs

■Precision power monitoring and power

switching circuitry

■Automatic WRITE-protection when VCC is out-

of-tolerance

■Two-input decoder allows control for up to

8 SRAMs (with 2 devices active in parallel)

■Choice of supply voltages and power-fail

deselect voltages:

–M40Z300:

VCC = 4.5 V to 5.5 V

THS = VSS: 4.5 V ≤ VPFD ≤ 4.75 V

THS = VOUT: 4.2 V ≤ VPFD ≤ 4.5 V

–M40Z300W:

VCC = 3.0 V to 3.6 V

THS = VSS: 2.8 V ≤ VPFD ≤ 3.0 V

VCC = 2.7 V to 3.3 V

THS = VOUT: 2.5 V ≤ VPFD ≤ 2.7 V

■Reset output (RST) for power on reset

■Battery low pin (BL)

■Less than 12 ns chip enable access

propagation delay (for 5.0 V device)

■Packaging includes a 28-lead SOIC and

SNAPHAT® top (to be ordered separately), or

A 16-lead SOIC

■SOIC package provides direct connection for a

SNAPHAT top which contains the battery

■RoHS compliant

– Lead-free second level interconnect

SO16 (MQ)

SNAPHAT (SH)

crystal/battery

SOH28 (MH)

www.st.com

Obsolete Product(s) - Obsolete Product(s)

Contents M40Z300, M40Z300W

2/25 Doc ID 5679 Rev 5

Contents

1 Description . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5

2 Operation . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9

2.1 Two to four decode . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10

2.2 Data retention lifetime calculation . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10

2.3 Power-on reset output . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11

2.4 Battery low pin . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11

2.5 VCC noise and negative going transients . . . . . . . . . . . . . . . . . . . . . . . . . 12

3 Maximum ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13

4 DC and AC parameters . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 14

5 Package mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 18

6 Part numbering . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 23

7 Revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 24

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M40Z300, M40Z300W List of tables
Doc ID 5679 Rev 5 3/25
List of tables
Table 1. Signal names  . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6
Table 2. Truth table. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10
Table 3. Absolute maximum ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13
Table 4. DC and AC measurement conditions . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 14
Table 5. Capacitance  . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 14
Table 6. DC characteristics. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 15
Table 7. Power down/up mode AC characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 17
Table 8. SOH28 – 28-lead plastic small outline, battery SNAPHAT, package mechanical data  . . . 19
Table 9. SH – 4-pin SNAPHAT housing for 48 mAh battery, package mechanical data  . . . . . . . . . 20
Table 10. SH – 4-pin SNAPHAT housing for 120 mAh battery, package mechanical data . . . . . . . . 21
Table 11. SO16 – 16-lead plastic small outline, 150 mils body width, package mechanical data  . . . 22
Table 12. Ordering information example  . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 23
Table 13. SNAPHAT® battery table  . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 23
Table 14. Document revision history  . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 24
      Obsolete Product(s) - Obsolete Product(s)

List of figures M40Z300, M40Z300W
4/25 Doc ID 5679 Rev 5
List of figures
Figure 1. Logic diagram . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6
Figure 2. 28-pin SOIC connections  . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7
Figure 3. M40Z300 16-pin SOIC connections . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7
Figure 4. M40Z300W 16-pin SOIC connections  . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7
Figure 5. Hardware hookup . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 8
Figure 6. Address-decode time  . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10
Figure 7. Supply voltage protection . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12
Figure 8. AC testing load circuit . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 14
Figure 9. Power-down timing . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 16
Figure 10. Power-up timing  . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 16
Figure 11. SOH28 – 28-lead plastic small outline, 4-socket battery SNAPHAT, package outline . . . . 19
Figure 12. SH – 4-pin SNAPHAT housing for 48 mAh battery, package outline . . . . . . . . . . . . . . . . . 20
Figure 13. SH – 4-pin SNAPHAT housing for 120mAh battery, package outline. . . . . . . . . . . . . . . . . 21
Figure 14. SO16 – 16-lead plastic small outline, 150 mils body width, package outline . . . . . . . . . . . 22
      Obsolete Product(s) - Obsolete Product(s)

M40Z300, M40Z300W Description

Doc ID 5679 Rev 5 5/25

1 Description

The M40Z300/W NVRAM supervisor is a self-contained device which converts a standard

low-power SRAM into a non-volatile memory. A precision voltage reference and comparator

monitors the VCC input for an out-of-tolerance condition.

When an invalid VCC condition occurs, the conditioned chip enable outputs (E1CON to

E4CON) are forced inactive to write-protect the stored data in the SRAM. During a power

failure, the SRAM is switched from the VCC pin to the lithium cell within the SNAPHAT® to

provide the energy required for data retention. On a subsequent power-up, the SRAM

remains write protected until a valid power condition returns.

The 28-pin, 330 mil SOIC provides sockets with gold plated contacts for direct connection to

a separate SNAPHAT housing containing the battery. The SNAPHAT housing has gold

plated pins which mate with the sockets, ensuring reliable connection. The housing is keyed

to prevent improper insertion. This unique design allows the SNAPHAT battery package to

be mounted on top of the SOIC package after the completion of the surface mount process

which greatly reduces the board manufacturing process complexity of either directly

soldering or inserting a battery into a soldered holder. Providing non-volatility becomes a

“SNAP.” The 16-pin SOIC provides battery pins for an external user-supplied battery.

Insertion of the SNAPHAT housing after reflow prevents potential battery damage due to the

high temperatures required for device surface-mounting. The SNAPHAT housing is also

keyed to prevent reverse insertion.

The 28-pin SOIC and battery packages are shipped separately in plastic anti-static tubes or

in tape & reel form. For the 28-lead SOIC, the battery/crystal package (e.g., SNAPHAT) part

number is “M4ZXX-BR00SH”.

Caution: Do not place the SNAPHAT battery top in conductive foam, as this will drain the lithium

button-cell battery.

Obsolete Product(s) - Obsolete Product(s)

Description M40Z300, M40Z300W

6/25 Doc ID 5679 Rev 5

Figure 1. Logic diagram

1. For 16-pin SOIC package only.

Table 1. Signal names

THS Threshold select input

EChip enable input

E1CON - E4CON Conditioned chip enable output

A, B Decoder inputs

RST Reset output (open drain)

BL Battery low output (open drain)

VOUT Supply voltage output

VCC Supply voltage

VSS Ground

B + Positive battery pin

B – Negative battery pin(1)

1. For M40Z300W, B– must be connected to the negative battery terminal only (not to pin 8, VSS).

NC Not connected internally

AI02242

THS

VCC

M40Z300

M40Z300W

VSS

VOUT

E1CON

E2CON

E3CON

E4CON

RST

B +(1)

B –(1)

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M40Z300, M40Z300W Description

Doc ID 5679 Rev 5 7/25

Figure 2. 28-pin SOIC connections

Figure 3. M40Z300 16-pin SOIC connections

Figure 4. M40Z300W 16-pin SOIC connections

1. For M40Z300W, B– must be connected to the negative battery terminal only (not to pin 8, VSS).

AI02243

RST

E1CON

E3CON

E2CON

NCNC

THS

NCVSS

E4CON

VOUT VCC

M40Z300

M40Z300W

AI03624

710

RST

E1CON

E2CON

B –

VSS

VOUT VCC

M40Z300

THS

E3CON

E4CON

B +

AI06350

710

RST

E1CON

E2CON

B +

VSS

VOUT VCC

M40Z300W

THS

E3CON

E4CON

B –(1)

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Description M40Z300, M40Z300W

8/25 Doc ID 5679 Rev 5

Figure 5. Hardware hookup

1. If the second chip enable pin (E2) is unused, it should be tied to VOUT.

AI02395

VCC

E2(1)

E1CON

VSS

VOUT

VCC

CMOS

SRAM

3.0V, 3.3V or 5V

THS

0.1µF

M40Z300

M40Z300W

Threshold

E2CON

E3CON

E4CON

RST

E2(1) E2(1) E2(1)

VCC

CMOS

SRAM

0.1µF

VCC

CMOS

SRAM

0.1µF

VCC

CMOS

SRAM

0.1µF

To Microprocessor

To Battery Monitor Circuit

Obsolete Product(s) - Obsolete Product(s)

M40Z300, M40Z300W Operation

Doc ID 5679 Rev 5 9/25

2 Operation

The M40Z300/W, as shown in Figure 5 on page 8, can control up to four (eight, if placed in

parallel) standard low-power SRAMs. These SRAMs must be configured to have the chip

enable input disable all other input signals. Most slow, low-power SRAMs are configured like

this, however many fast SRAMs are not. During normal operating conditions, the

conditioned chip enable (E1CON to E4CON) output pins follow the chip enable (E) input pin

with timing shown in Figure 6 on page 10 and Table 7 on page 17. An internal switch

connects VCC to VOUT

. This switch has a voltage drop of less than 0.3V (IOUT1).

When VCC degrades during a power failure, E1CON to E4CON are forced inactive

independent of E. In this situation, the SRAM is unconditionally write protected as VCC falls

below an out-of-tolerance threshold (VPFD). For the M40Z300 the power fail detection value

associated with VPFD is selected by the Threshold Select (THS) pin and is shown in Table 6

on page 15. For the M40Z300W, the THS pin selects both the supply voltage and VPFD (also

shown in Table 6 on page 15).

Note: In either case, THS pin must be connected to either VSS or VOUT

If chip enable access is in progress during a power fail detection, that memory cycle

continues to completion before the memory is write protected. If the memory cycle is not

terminated within time tWPT

, E1CON to E4CON are unconditionally driven high, write

protecting the SRAM. A power failure during a WRITE cycle may corrupt data at the

currently addressed location, but does not jeopardize the rest of the SRAM's contents. At

voltages below VPFD (min), the user can be assured the memory will be write protected

within the Write Protect Time (tWPT) provided the VCC fall time exceeds tF (see Figure 6 on

page 10).

As VCC continues to degrade, the internal switch disconnects VCC and connects the internal

battery to VOUT

. This occurs at the switchover voltage (VSO). Below the VSO, the battery

provides a voltage VOHB to the SRAM and can supply current IOUT2 (see Ta ble 6 o n

page 15).

When VCC rises above VSO, VOUT is switched back to the supply voltage. Outputs E1CON to

E4CON are held inactive for tCER (120ms maximum) after the power supply has reached

VPFD, independent of the E input, to allow for processor stabilization (see Figure 10 on

page 16).

Obsolete Product(s) - Obsolete Product(s)

Operation M40Z300, M40Z300W

10/25 Doc ID 5679 Rev 5

2.1 Two to four decode

The M40Z300/W includes a 2 input (A, B) decoder which allows the control of up to 4

independent SRAMs. The truth table for these inputs is shown in Ta b l e 2 .

Table 2. Truth table

Figure 6. Address-decode time

Note: During system design, compliance with the SRAM timing parameters must comprehend the

propagation delay between E1CON - E4CON.

2.2 Data retention lifetime calculation

Most low power SRAMs on the market today can be used with the M40Z300/W NVRAM

SUPERVISOR. There are, however some criteria which should be used in making the final

choice of which SRAM to use. The SRAM must be designed in a way where the chip enable

input disables all other inputs to the SRAM. This allows inputs to the M40Z300/W and

SRAMs to be “Don't Care” once VCC falls below VPFD(min). The SRAM should also

guarantee data retention down to VCC = 2.0 V. The chip enable access time must be

sufficient to meet the system needs with the chip enable propagation delays included. If the

SRAM includes a second chip enable pin (E2), this pin should be tied to VOUT

If data retention lifetime is a critical parameter for the system, it is important to review the

data retention current specifications for the particular SRAMs being evaluated. Most SRAMs

specify a data retention current at 3.0 V. Manufacturers generally specify a typical condition

for room temperature along with a worst case condition (generally at elevated

temperatures). The system level requirements will determine the choice of which value to

use.

Inputs Outputs

EBAE1

CON E2CON E3CON E4CON

HXXHHHH

LLLLHHH

LLHHLHH

LHLHHLH

LHHHHHL

AI02551

A, B

E1CON - E4CON

tAS

tEDH

tEDL

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M40Z300, M40Z300W Operation

Doc ID 5679 Rev 5 11/25

The data retention current value of the SRAMs can then be added to the IBAT value of the

M40Z300/W to determine the total current requirements for data retention. The available

battery capacity for the SNAPHAT® of your choice can then be divided by this current to

determine the amount of data retention available (see Table 13 on page 23).

Caution: Take care to avoid inadvertent discharge through VOUT and E1CON - E4CON after battery has

been attached.

For a further more detailed review of lifetime calculations, please see application note

AN1012.

2.3 Power-on reset output

All microprocessors have a reset input which forces them to a known state when starting.

The M40Z300/W has a reset output (RST) pin which is guaranteed to be low within tWPT of

VPFD (see Ta bl e 7 ). This signal is an open drain configuration. An appropriate pull-up

resistor should be chosen to control the rise time. This signal will be valid for all voltage

conditions, even when VCC equals VSS.

Once VCC exceeds the power failure detect voltage VPFD, an internal timer keeps RST low

for tREC to allow the power supply to stabilize.

2.4 Battery low pin

The M40Z300/W automatically performs battery voltage monitoring upon power-up, and at

factory-programmed time intervals of at least 24 hours. The battery low (BL) pin will be

asserted if the battery voltage is found to be less than approximately 2.5 V. The BL pin will

remain asserted until completion of battery replacement and subsequent battery low

monitoring tests, either during the next power-up sequence or the next scheduled 24-hour

interval.

If a battery low is generated during a power-up sequence, this indicates that the battery is

below 2.5 V and may not be able to maintain data integrity in the SRAM. Data should be

considered suspect, and verified as correct. A fresh battery should be installed.

If a battery low indication is generated during the 24-hour interval check, this indicates that

the battery is near end of life. However, data is not compromised due to the fact that a

nominal VCC is supplied. In order to insure data integrity during subsequent periods of

battery backup mode, the battery should be replaced. The SNAPHAT® top should be

replaced with valid VCC applied to the device.

The M40Z300/W only monitors the battery when a nominal VCC is applied to the device.

Thus appli-cations which require extensive durations in the battery backup mode should be

powered-up periodically (at least once every few months) in order for this technique to be

beneficial. Additionally, if a battery low is indicated, data integrity should be verified upon

power-up via a checksum or other technique. The BL pin is an open drain output and an

appropriate pull-up resistor to VCC should be chosen to control the rise time.

Obsolete Product(s) - Obsolete Product(s)

Operation M40Z300, M40Z300W

12/25 Doc ID 5679 Rev 5

2.5 VCC noise and negative going transients

ICC transients, including those produced by output switching, can produce voltage

fluctuations, resulting in spikes on the VCC bus. These transients can be reduced if

capacitors are used to store energy which stabilizes the VCC bus. The energy stored in the

bypass capacitors will be released as low going spikes are generated or energy will be

absorbed when overshoots occur. A ceramic bypass capacitor value of 0.1 µF (as shown in

Figure 7) is recommended in order to provide the needed filtering.

In addition to transients that are caused by normal SRAM operation, power cycling can

generate negative voltage spikes on VCC that drive it to values below VSS by as much as

one volt. These negative spikes can cause data corruption in the SRAM while in battery

backup mode. To protect from these voltage spikes, STMicroelectronics recommends

connecting a Schottky diode from VCC to VSS (cathode connected to VCC, anode to VSS).

Schottky diode 1N5817 is recommended for through hole and MBRS120T3 is

recommended for surface mount.

Figure 7. Supply voltage protection

AI00622

VCC

0.1µF DEVICE

VCC

VSS

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M40Z300, M40Z300W Maximum ratings

Doc ID 5679 Rev 5 13/25

3 Maximum ratings

Stressing the device above the rating listed in the absolute maximum ratings table may

cause permanent damage to the device. These are stress ratings only and operation of the

device at these or any other conditions above those indicated in the operating sections of

this specification is not implied. Exposure to absolute maximum rating conditions for

extended periods may affect device reliability.

Table 3. Absolute maximum ratings

Caution: Negative undershoots below –0.3 V are not allowed on any pin while in the battery backup

mode.

Caution: Do NOT wave solder SOIC to avoid damaging SNAPHAT sockets.

Symbol Parameter Value Unit

TAAmbient operating temperature Grade 1 0 to 70 °C

Grade 6 –40 to 85 °C

TSTG Storage temperature SNAPHAT®–40 to 85 °C

SOIC –55 to 125 °C

TSLD(1)

1. For SO package, Lead-free (Pb-free) lead finish: Reflow at peak temperature of 260°C (total thermal

budget not to exceed 245°C for greater than 30 seconds).

Lead solder temperature for 10 seconds 260 °C

VIO Input or output voltage –0.3 to VCC + 0.3 V

VCC Supply voltage M40Z300 –0.3 to 7.0 V

M40Z300W –0.3 to 4.6 V

IOOutput current 20 mA

PDPower dissipation 1 W

Obsolete Product(s) - Obsolete Product(s)

DC and AC parameters M40Z300, M40Z300W

14/25 Doc ID 5679 Rev 5

4 DC and AC parameters

This section summarizes the operating and measurement conditions, as well as the DC and

AC characteristics of the device. The parameters in the following DC and AC characteristic

tables are derived from tests performed under the measurement conditions listed in Table 4 :

DC and AC measurement conditions. Designers should check that the operating conditions

in their projects match the measurement conditions when using the quoted parameters.

Table 4. DC and AC measurement conditions

Note: Output High Z is defined as the point where data is no longer driven.

Figure 8. AC testing load circuit

Note: 50 pF for M40Z300W.

Table 5. Capacitance

Parameter M40Z300 M40Z300W

VCC supply voltage 4.5 to 5.5 V 2.7 to 3.6 V

Ambient operating temperature Grade 1 0 to 70 °C 0 to 70 °C

Grade 6 –40 to 85 °C –40 to 85 °C

Load capacitance (CL) 100 pF 50 pF

Input rise and fall times ≤ 5 ns ≤ 5 ns

Input pulse voltages 0 to 3 V 0 to 3 V

Input and output timing ref. voltages 1.5 V 1.5 V

AI02393

CL = 100pF

or 50pF

CL includes JIG capacitance

333Ω

DEVICE

UNDER

TEST

1.73V

Symbol Parameter(1)(2)

1. Sampled only, not 100% tested.

2. At 25 °C, f = 1 MHz.

Min Max Unit

CIN Input capacitance - 8 pF

COUT(3)

3. Outputs deselected.

Input/output capacitance - 10 pF

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M40Z300, M40Z300W DC and AC parameters

Doc ID 5679 Rev 5 15/25

Table 6. DC characteristics

Sym Parameter Test condition(1)

1. Valid for ambient operating temperature: TA = 0 to 70 °C or –40 to 85 °C; VCC = 2.7 to 3.6 V or 4.5 to 5.5 V (except where

noted).

M40Z300 M40Z300W

Unit

Min Typ Max Min Typ Max

ILI(2)

2. Outputs deselected.

Input leakage current 0 V ≤ VIN ≤ VCC ±1 ±1 µA

ICC Supply current Outputs open 3 6 2 4 mA

VIL Input low voltage –0.3 0.8 –0.3 0.8 V

VIH Input high voltage 2.2 VCC + 0.3 2.0 VCC + 0.3 V

VOL

Output low voltage IOL = 4.0 mA 0.4 0.4 V

Output low voltage

(open drain)(3)

3. For RST & BL pins (open drain).

IOL = 10 mA 0.4 0.4 V

VOH Output high voltage IOH = –2.0 mA 2.4 2.4 V

VOHB VOH battery backup(4)

4. Chip enable outputs (E1CON - E4CON) can only sustain CMOS leakage currents in the battery backup mode.

Higher leakage currents will reduce battery life.

IOUT2 = –1.0 µA 2.0 2.9 3.6 2.0 2.9 3.6 V

IOUT1 VOUT current (active) VOUT > VCC –0.3 250 150 mA

VOUT > VCC –0.2 150 100 mA

IOUT2

VOUT current (battery

backup) VOUT > VBAT –0.3 100 100 µA

ICCDR

Data retention mode

current(5)

5. Measured with VOUT and E1CON - E4CON open.

100 100 nA

THS Threshold select

voltage VSS VOUT VSS VOUT V

VPFD

Power-fail deselect

voltage (THS = VSS)4.5 4.6 4.75 2.8 2.9 3.0 V

Power-fail deselect

voltage (THS = VOUT)4.2 4.35 4.5 2.5 2.6 2.7 V

VSO

Battery backup

switchover voltage 3.0 2.5 V

VBAT Battery voltage 2.0 2.9 3.6 2.0 2.9 3.6 V

Obsolete Product(s) - Obsolete Product(s)

DC and AC parameters M40Z300, M40Z300W

16/25 Doc ID 5679 Rev 5

Figure 9. Power-down timing

Figure 10. Power-up timing

AI02398B

VCC

E1CON-E4CON

tFB

VOHB

VPFD (max)

VPFD (min)

VSO

tWPT

VPFD

RST

AI02399B

VCC

E1CON-E4CON

tCER

VOHB

VPFD (max)

VPFD (min)

VSO

VPFD

tEDLtEDH

RST

tREC

tRB

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M40Z300, M40Z300W DC and AC parameters

Doc ID 5679 Rev 5 17/25

Table 7. Power down/up mode AC characteristics

Symbol Parameter(1)

1. Valid for ambient operating temperature: TA = 0 to 70 °C or –40 to 8 5°C; VCC = 2.7 to 3.6 V or 4.5 to

5.5 V(except where noted).

Min Max Unit

tF(2)

2. VPFD (max) to VPFD (min) fall time of less than tF may result in deselection/write protection not occurring

until 200 µs after VCC passes VPFD (min).

VPFD (max) to VPFD (min) VCC fall time 300 µs

tFB(3)

3. VPFD (min) to VSS fall time of less than tFB may cause corruption of RAM data.

VPFD (min) to VSS VCC fall time M40Z300 10 µs

M40Z300W 150 µs

tRVPFD(min) to VPFD (max) VCC rise time 10 µs

tEDL Chip enable propagation delay low M40Z300 12 ns

M40Z300W 20 ns

tEDH Chip enable propagation delay high M40Z300 10 ns

M40Z300W 20 ns

tAS A, B set up to E 0ns

tCER Chip enable recovery 40 120 ms

tREC(4)

4. tREC (min) = 20ms for industrial temperature Grade 6 device.

VPFD (max) to RST high 40 120 ms

tWPT Write protect time M40Z300 40 150 µs

M40Z300W 40 250 µs

tRB VSS to VPFD (min) VCC rise time 1 µs

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Package mechanical data M40Z300, M40Z300W

18/25 Doc ID 5679 Rev 5

5 Package mechanical data

In order to meet environmental requirements, ST offers these devices in different grades of

ECOPACK® packages, depending on their level of environmental compliance. ECOPACK®

specifications, grade definitions and product status are available at: www.st.com.

ECOPACK® is an ST trademark.

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M40Z300, M40Z300W Package mechanical data

Doc ID 5679 Rev 5 19/25

Figure 11. SOH28 – 28-lead plastic small outline, 4-socket battery SNAPHAT,

package outline

Note: Drawing is not to scale.

SOH-A

LA1 α

Table 8. SOH28 – 28-lead plastic small outline, battery SNAPHAT, package

mechanical data

Symbol

mm inches

Typ Min Max Typ Min Max

A 3.05 0.120

A1 0.05 0.36 0.002 0.014

A2 2.34 2.69 0.092 0.106

B 0.36 0.51 0.014 0.020

C 0.15 0.32 0.006 0.012

D 17.71 18.49 0.697 0.728

E 8.23 8.89 0.324 0.350

e 1.27 – – 0.050 – –

eB 3.20 3.61 0.126 0.142

H 11.51 12.70 0.453 0.500

L 0.41 1.27 0.016 0.050

a0°8°0°8°

N28 28

CP 0.10 0.004

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Package mechanical data M40Z300, M40Z300W

20/25 Doc ID 5679 Rev 5

Figure 12. SH – 4-pin SNAPHAT housing for 48 mAh battery, package outline

Note: Drawing is not to scale.

Table 9. SH – 4-pin SNAPHAT housing for 48 mAh battery, package mechanical data

SHZP-A

A1 A

Symbol

mm inches

Typ Min Max Typ Min Max

A9.780.385

A1 6.73 7.24 0.265 0.285

A2 6.48 6.99 0.255 0.275

A3 0.38 0.015

B 0.46 0.56 0.018 0.022

D 21.21 21.84 0.835 0.860

E 14.22 14.99 0.560 0.590

eA 15.55 15.95 0.612 0.628

eB 3.20 3.61 0.126 0.142

L 2.03 2.29 0.080 0.090

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M40Z300, M40Z300W Package mechanical data

Doc ID 5679 Rev 5 21/25

Figure 13. SH – 4-pin SNAPHAT housing for 120mAh battery, package outline

Note: Drawing is not to scale.

Table 10. SH – 4-pin SNAPHAT housing for 120 mAh battery, package mechanical data

SHZP-A

A1 A

Symbol

mm inches

Typ Min Max Typ Min Max

A 10.54 0.415

A1 8.00 8.51 0.315 .0335

A2 7.24 8.00 0.285 0.315

A3 0.38 0.015

B 0.46 0.56 0.018 0.022

D 21.21 21.84 0.835 0.860

E 17.27 18.03 0.680 0.710

eA 15.55 15.95 0.612 0.628

eB 3.20 3.61 0.126 0.142

L 2.03 2.29 0.080 0.090

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Package mechanical data M40Z300, M40Z300W

22/25 Doc ID 5679 Rev 5

Figure 14. SO16 – 16-lead plastic small outline, 150 mils body width, package

outline

Note: Drawing is not to scale.

SO-b

LA1 α

Table 11. SO16 – 16-lead plastic small outline, 150 mils body width, package

mechanical data

Symbol

mm inches

Typ. Min. Max. Typ. Min. Max.

A 1.75 0.069

A1 0.10 0.25 0.004 0.010

A2 1.60 0.063

B 0.35 0.46 0.014 0.018

C 0.19 0.25 0.007 0.010

D 9.80 10.00 0.386 0.394

E 3.80 4.00 0.150 0.158

e1.27––0.050––

H 5.80 6.20 0.228 0.244

L 0.40 1.27 0.016 0.050

a 0°8° 0°8°

N16 16

CP 0.10 0.004

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M40Z300, M40Z300W Part numbering

Doc ID 5679 Rev 5 23/25

6 Part numbering

Table 12. Ordering information example

Caution: Do not place the SNAPHAT battery package “M4Zxx-BR00SH” in conductive foam as it will

drain the lithium button-cell battery.

For other options, or for more information on any aspect of this device, please contact the

ST sales office nearest you

Example: M40Z 300W MH 1 E

Device type

M40Z

Supply and write protect voltage

300(1) = VCC = 4.5 to 5.5 V

1. Not recommended for new design. Contact ST sales office for availability.

THS = VSS = 4.5 V ≤ VPFD ≤ 4.75 V

THS = VOUT = 4.2 V ≤ VPFD ≤ 4.5 V

300W(1) = VCC = 3.0 to 3.6 V

THS = VSS = 2.8 V ≤ VPFD ≤ 3.0 V

VCC = 2.7 V to 3.3 V

THS = VOUT = 2.5 V ≤ VPFD ≤ 2.7 V

Package

MH (2) = SOH28

2. The SOIC package (SOH28) requires the battery package (SNAPHAT®) which is ordered separately under

the part number “M4Zxx-BR00SH” in plastic tubes or “M4Zxx-BR00SHTR” in tape & reel form.

MQ = SO16

Temperature range

1 = 0 to 70 °C

6 = –40 to 85 °C

Shipping method for SOIC

E = Lead-free package (ECOPACK®), tubes

F = Lead-free package (ECOPACK®), tape & reel

Table 13. SNAPHAT® battery table

Part number Description Package

M4Z28-BR00SH1 Lithium battery (48 mAh) SNAPHAT SH

M4Z32-BR00SH1 Lithium battery (120 mAh) SNAPHAT SH

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Revision history M40Z300, M40Z300W
24/25 Doc ID 5679 Rev 5
7 Revision history
Table 14. Document revision history
Date Revision Changes
Mar-1999 1.0 First issue
08-Mar-2000 1.1 Document layout changed; SO16 package added; battery capacity 
changed (Ta b le 1 3 )
22-Sep-2000 1.2 SO16 package measures change
23-Feb-2001 1.3 Added information for industrial temperature (Ta b l e 3 , 7, 12)
30-May-2001 1.4 Change “Controller” references to “SUPERVISOR”
10-Jul-2001 2.0 Reformatted; added temp/voltage info. to tables (Ta bl e 6 , 7); Figures 
changed (Figure 1, 3, 5, 8, 6)
01-Aug-2001 2.1 E2 connections added to hookup (Figure 5)
15-Jan-2002 2.2 16-pin SOIC connections split, graphic added (Figure 4); addition to 
hardware hookup (Figure 5)
13-May-2002 2.3 Modify reflow time and temperature footnote (Ta b l e 3 )
31-Oct-2003 2.4 Update DC characteristics (Ta b l e 6 )
04-Nov-2003 2.5 Correct DC characteristics (Ta bl e 6)
23-Feb-2005 3.0 Reformatted; IR reflow, SO package updates (Ta b l e 3 )
05-Nov-2007 4.0
Reformatted; added lead-free second level interconnect to cover page 
and Section 5: Package mechanical data; updated Figure 10 and 
Ta bl e 3 , 12, 13.
19-Oct-2010 5
Devices not recommended for new design, updated document status; 
updated Ta bl e 1 2 , ECOPACK® text in Section 5: Package mechanical 
data; reformatted document.
      Obsolete Product(s) - Obsolete Product(s)

M40Z300, M40Z300W

Doc ID 5679 Rev 5 25/25

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Obsolete Product(s) - Obsolete Product(s)