D44H11 - FAIRCHILD SEMICONDUCTOR

November, 2014 − Rev. 13 1Publication Order Number:

D44H/D

D44H Series (NPN),

D45HSeries (PNP)

Complementary Silicon

Power Transistors

These series of plastic, silicon NPN and PNP power transistors can

be used as general purpose power amplification and switching such as

output or driver stages in applications such as switching regulators,

converters and power amplifiers.

Features

•Low Collector−Emitter Saturation Voltage

•Fast Switching Speeds

•Complementary Pairs Simplifies Designs

•These Devices are Pb−Free and are RoHS Compliant*

MAXIMUM RATINGS

Rating Symbol Value Unit

Collector−Emitter Voltage

D44H8, D45H8

D44H11, D45H11

VCEO 60

Vdc

Emitter Base Voltage VEB 5.0 Vdc

Collector Current − Continuous IC10 Adc

Collector Current − Peak (Note 1) ICM 20 Adc

Total Power Dissipation

@ TC = 25°C

@ TA = 25°C

PD70

2.0

Operating and Storage Junction

Temperature Range TJ, Tstg −55 to +150 °C

Stresses exceeding those listed in the Maximum Ratings table may damage the

device. If any of these limits are exceeded, device functionality should not be

assumed, damage may occur and reliability may be af fected.

1. Pulse Width ≤ 6.0 ms, Duty Cycle ≤ 50%.

THERMAL CHARACTERISTICS

Characteristic Symbol Max Unit

Thermal Resistance, Junction−to−Case RqJC 1.8 °C/W

Thermal Resistance, Junction−to−Ambient RqJA 62.5 °C/W

Maximum Lead Temperature for Soldering

Purposes: 1/8″ from Case for 5 Seconds TL275 °C

*For additional information on our Pb−Free strategy and soldering details, please

download the ON Semiconductor Soldering and Mounting Techniques

Reference Manual, SOLDERRM/D.

Device Package Shipping

TO−220

CASE 221A

STYLE 1

10 AMP COMPLEMENTARY

SILICON POWER

TRANSISTORS 60, 80 VOLTS

MARKING

DIAGRAM

D4xHyyG

AYWW

www.onsemi.com

D45H8G TO−220

(Pb−Free) 50 Units/Rail

ORDERING INFORMATION

D4xHyy = Device Code

x = 4 or 5

yy = 8 or 11

A = Assembly Location

Y = Year

WW = Work Week

G = Pb−Free Package

D45H11G TO−220

(Pb−Free) 50 Units/Rail

D44H11G TO−220

(Pb−Free) 50 Units/Rail

D44H8G TO−220

(Pb−Free) 50 Units/Rail

BASE

EMITTER 3

COLLECTOR 2, 4

BASE

EMITTER 3

COLLECTOR 2, 4

PNP NPN

D44H Series (NPN), D45H Series (PNP)

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ELECTRICAL CHARACTERISTICS (TC = 25°C unless otherwise noted)

Characteristic Symbol Min Typ Max Unit

OFF CHARACTERISTICS

Collector−Emitter Sustaining Voltage D44H8, D45H8

(IC = 30 mAdc, IB = 0 Adc) D44H11, D45H11 VCEO(sus) 60

80 −

−−

−Vdc

Collector Cutoff Current (VCE = Rated VCEO, VBE = 0) ICES − − 10 mA

Emitter Cutoff Current (VEB = 5.0 Vdc) IEBO − − 10 mA

ON CHARACTERISTICS

DC Current Gain

(VCE = 1.0 Vdc, IC = 2.0 Adc)

(VCE = 1.0 Vdc, IC = 4.0 Adc)

hFE 60

40 −

−−

−

Collector−Emitter Saturation Voltage

(IC = 8.0 Adc, IB = 0.4 Adc) VCE(sat) − − 1.0 Vdc

Base−Emitter Saturation Voltage

(IC = 8.0 Adc, IB = 0.8 Adc) VBE(sat) − − 1.5 Vdc

DYNAMIC CHARACTERISTICS

Collector Capacitance

(VCB = 10 Vdc, ftest = 1.0 MHz) D44H Series

D45H Series

Ccb −

−90

160 −

−

Gain Bandwidth Product

(IC = 0.5 Adc, VCE = 10 Vdc, f = 20 MHz) D44H Series

D45H Series

fT−

−50

40 −

−

MHz

SWITCHING TIMES

Delay and Rise Times

(IC = 5.0 Adc, IB1 = 0.5 Adc) D44H Series

D45H Series

td + tr−

−300

135 −

−

Storage Time

(IC = 5.0 Adc, IB1 = IB2 = 0.5 Adc) D44H Series

D45H Series

ts−

−500

500 −

−

Fall Time

(IC = 5.0 Adc, IB1 = 102 = 0.5 Adc) D44H Series

D45H Series

tf−

−140

100 −

−

Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product

performance may not be indicated by the Electrical Characteristics if operated under different conditions.

D44H Series (NPN), D45H Series (PNP)

www.onsemi.com

Figure 1. D44H11 DC Current Gain Figure 2. D45H11 DC Current Gain

IC, COLLECTOR CURRENT (AMPS) IC, COLLECTOR CURRENT (AMPS)

1010.10.01

100

1000

1010.10.01

100

1000

hFE, DC CURRENT GAIN

VCE = 1 V

125°C

hFE, DC CURRENT GAIN

Figure 3. D44H11 DC Current Gain Figure 4. D45H11 DC Current Gain

IC, COLLECTOR CURRENT (AMPS) IC, COLLECTOR CURRENT (AMPS)

1010.10.01

100

1000

1010.10.01

100

1000

hFE, DC CURRENT GAIN

VCE = 5 V

hFE, DC CURRENT GAIN

Figure 5. D44H11 ON−Voltage Figure 6. D45H11 ON−Voltage

IC, COLLECTOR CURRENT (AMPS) IC, COLLECTOR CURRENT (AMPS)

1010.1

0.05

0.40

1010.1

0.1

0.3

0.6

SATURATION VOLTAGE (VOLTS)

VCE(sat) @ IC/IB = 10

SATURATION VOLTAGE (VOLTS)

−40°C

25°C

VCE = 1 V

125°C

−40°C

25°C

125°C

−40°C

25°C

VCE = 5 V

125°C

−40°C

25°C

125°C

−40°C

25°C

0.10

0.15

0.20

0.25

0.30

0.35

0.2

0.5

0.4

VCE(sat) @ IC/IB = 10

125°C

−40°C

25°C

D44H Series (NPN), D45H Series (PNP)

www.onsemi.com

Figure 7. D44H11 ON−Voltage Figure 8. D45H11 ON−Voltage

IC, COLLECTOR CURRENT (AMPS) IC, COLLECTOR CURRENT (AMPS)

1010.1

0.2

1.2

1010.1

0.2

0.6

1.4

SATURATION VOLTAGE (VOLTS)

VBE(sat) @ IC/IB = 10

SATURATION VOLTAGE (VOLTS)

125°C

−40°C

25°C

0.4

0.6

0.8

1.0

0.4

1.0

0.8

VBE(sat) @ IC/IB = 10

125°C

−40°C

25°C

1.2

100

1.0 VCE, COLLECTOR−EMITTER VOLTAGE (VOLTS)

5.0 10

TC ≤ 70° C

DUTY CYCLE ≤ 50%

2.0 3.0 20 30 50 100

1.0

7.0

D44H/45H8

D44H/45H10,11

Figure 9. Maximum Rated Forward Bias

Safe Operating Area

1.0 ms

0.1

0.2

0.3

0.5

2.0

3.0

5.0

10 ms

100 ms

1.0 ms

, COLLECTOR CURRENT (AMPS)

Figure 10. Power Derating

T, TEMPERATURE (°C)

040 60 100 120 16

2.0

1.0

3.0

80 140

PD, POWER DISSIPATION (WATTS)

t, TIME (ms)

0.010.01 0.05 1.0 2.0 5.0 10 20 50 500 1.0

0.1 0.50.2

1.0

0.2

0.1

0.05

r(t), TRANSIENT THERMAL

ZqJC(t) = r(t) RqJC

RqJC = 1.56°C/W MAX

D CURVES APPLY FOR POWER

PULSE TRAIN SHOWN

READ TIME AT t1

TJ(pk) - TC = P(pk) ZqJC(t)

P(pk)

DUTY CYCLE, D = t1/t2

0.2

SINGLE PULSE

RESISTANCE (NORMALIZED)

Figure 11. Thermal Response

0.5 D = 0.5

0.05

0.3

0.7

0.07

0.03

0.02

0.02 100 200

0.1

0.02

0.01

D44H Series (NPN), D45H Series (PNP)

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PACKAGE DIMENSIONS

TO−220

CASE 221A−09

ISSUE AH

NOTES:

1. DIMENSIONING AND TOLERANCING PER ANSI

Y14.5M, 1982.

2. CONTROLLING DIMENSION: INCH.

3. DIMENSION Z DEFINES A ZONE WHERE ALL

BODY AND LEAD IRREGULARITIES ARE

ALLOWED.

DIM MIN MAX MIN MAX

MILLIMETERSINCHES

A0.570 0.620 14.48 15.75

B0.380 0.415 9.66 10.53

C0.160 0.190 4.07 4.83

D0.025 0.038 0.64 0.96

F0.142 0.161 3.61 4.09

G0.095 0.105 2.42 2.66

H0.110 0.161 2.80 4.10

J0.014 0.024 0.36 0.61

K0.500 0.562 12.70 14.27

L0.045 0.060 1.15 1.52

N0.190 0.210 4.83 5.33

Q0.100 0.120 2.54 3.04

R0.080 0.110 2.04 2.79

S0.045 0.055 1.15 1.39

T0.235 0.255 5.97 6.47

U0.000 0.050 0.00 1.27

V0.045 --- 1.15 ---

Z--- 0.080 --- 2.04

123

SEATING

PLANE

−T−

STYLE 1:

PIN 1. BASE

2. COLLECTOR

3. EMITTER

4. COLLECTOR

UBLICATION ORDERING INFORMATION

N. American Technical Support: 800−282−9855 Toll Free

USA/Canada

Europe, Middle East and Africa Technical Support:

Phone: 421 33 790 2910

Japan Customer Focus Center

Phone: 81−3−5817−1050

D44H/D

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