MBR1640CT - NEWARK ELECTRONICS

5KASMC10A thru 5KASMC43A

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Revision: 18-Apr-16 1Document Number: 89432

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Surface Mount PAR® Transient Voltage Suppressors

High Temperature Stability and High Reliability Conditions

TYPICAL APPLICATIONS

Use in sensitive electronics protection against voltage

transients induced by inductive load switching and lighting

on ICs, MOSFET, signal lines of sensor units for consumer,

computer, industrial, automotive, and telecommunication.

FEATURES

• Junction passivation optimized design

passivated anisotropic rectifier technology

•T

J = 185 °C capability suitable for high reliability

and automotive requirement

• Available in uni-directional polarity only

• 5000 W peak pulse power capability with a 10/1000 μs

waveform

• Excellent clamping capability

• Very fast response time

• Low incremental surge resistance

• Meets MSL level 1, per J-STD-020, LF maximum peak

of 260 °C

• AEC-Q101 qualified

• Material categorization: for definitions of compliance

please see www.vishay.com/doc?99912

MECHANICAL DATA

Case: DO-214AB (SMCJ)

Molding compound meets UL 94 V-0 flammability rating

Base P/NHM3 - halogen-free, RoHS-compliant, and

AEC-Q101 qualified

Base P/NHM3_X - halogen-free, RoHS-compliant and

AEC-Q101 qualified (“_X” denotes revision code e.g. A, B, .....)

Terminals: Matte tin plated leads, solderable per

J-STD-002 and JESD 22-B102

HM3 suffix meets JESD 201 class 2 whisker test

Polarity: Color band denotes cathode end

Note

(1) Non-repetitive current pulse, per fig. 3 and derated above TA = 25 °C per fig. 2

PRIMARY CHARACTERISTICS

VWM 10 V to 43 V

VBR 11.1 V to 52.8

PPPM (10 x 1000 μs) 5000 W

PD 6.5 W

TJ max. 185 °C

Polarity Uni-directional

Package DO-214AB (SMCJ)

DO-214AB (SMCJ)

MAXIMUM RATINGS (TA = 25 °C unless otherwise noted)

PARAMETER SYMBOL VALUE UNIT

Peak pulse power dissipation with a 10/1000 μs waveform (fig. 3) PPPM (1) 5000 W

Peak power pulse current with a 10/1000 μs waveform (fig. 1) IPPM (1) See next table A

Power dissipation on infinite heatsink, TM = 50 °C PD6.5 W

Operating junction and storage temperature range TJ, TSTG -65 to +185 °C

5KASMC10A thru 5KASMC43A

www.vishay.com Vishay General Semiconductor

Revision: 18-Apr-16 2Document Number: 89432

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THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT

ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

Notes

(1) Pulse test: tp  50 ms

(2) Surge current waveform per fig. 3 and derated per fig. 2

(3) All terms and symbols are consistent with ANSI/IEEE C62.35

Notes

(1) Mounted on minimum recommended pad layout

(2) Mounted on infinite heat sink

Note

(1) AEC-Q101 qualified

ELECTRICAL CHARACTERISTICS (TA = 25 °C unless otherwise noted)

DEVICE

TYPE

DEVICE

MARKING

CODE

BREAKDOWN

VOLTAGE

VBR AT IT (1)

(V)

TEST

CURRENT

(mA)

STAND-OFF

VOLTAGE

VWM

(V)

MAXIMUM

REVERSE

LEAKAGE

AT VWM

IR (μA)

MAXIMUM

REVERSE

LEAKAGE

AT VWM

TJ = 150 °C

ID (μA)

MAXIMUM

PEAK PULSE

SURGE

CURRENT

IPPM (2)

(A)

MAXIMUM

CLAMPING

VOLTAGE

AT IPPM

VC (V)

MIN. MAX.

5KASMC10A 5AX 11.1 12.3 1.0 10 20.0 500 294.1 17.0

5KASMC12A 5BE 13.3 14.7 1.0 12 10.0 300 251.3 19.9

5KASMC13A 5BG 14.4 15.9 1.0 13 10.0 300 232.6 21.5

5KASMC16A 5BP 17.8 19.7 1.0 16 2.0 50 192.3 26.0

5KASMC17A 5BR 18.9 20.9 1.0 17 2.0 50 181.2 27.6

5KASMC18A 5BT 20.0 22.1 1.0 18 2.0 50 171.2 29.2

5KASMC20A 5BV 22.2 24.5 1.0 20 2.0 50 154.3 32.4

5KASMC22A 5BX 24.4 26.9 1.0 22 2.0 50 140.8 35.5

5KASMC24A 5BZ 26.7 29.5 1.0 24 2.0 50 128.5 38.9

5KASMC26A 5CE 28.9 31.9 1.0 26 2.0 50 118.8 42.1

5KASMC28A 5CG 31.1 34.4 1.0 28 2.0 50 110.1 45.4

5KASMC30A 5CK 33.3 36.8 1.0 30 2.0 50 103.3 48.4

5KASMC33A 5CM 36.7 40.6 1.0 33 2.0 50 93.8 53.3

5KASMC36A 5CP 40.0 44.2 1.0 36 2.0 50 86.1 58.1

5KASMC40A 5CR 44.4 49.1 1.0 40 2.0 50 77.5 64.5

5KASMC43A 5CT 47.8 52.8 1.0 43 2.0 50 72.0 69.4

THERMAL CHARACTERISTICS (TA = 25 °C unless otherwise noted)

PARAMETER SYMBOL VALUE UNIT

Typical thermal resistance, junction to ambient RJA (1) 100 °C/W

Typical thermal resistance, junction to mount RJM (2) 20.8 °C/W

ORDERING INFORMATION (Example)

PREFERRED P/N UNIT WEIGHT (g) PREFERRED PACKAGE CODE BASE QUANTITY DELIVERY MODE

5KASMC10AHM3/57 (1) 0.257 57 850 7" diameter plastic tape and reel

5KASMC10AHM3/9A (1) 0.257 9A 3500 13" diameter plastic tape and reel

5KASMC10AHM3_A/H (1) 0.257 H 850 7" diameter plastic tape and reel

5KASMC10AHM3_A/I (1) 0.257 I 3500 13" diameter plastic tape and reel

5KASMC10A thru 5KASMC43A

www.vishay.com Vishay General Semiconductor

Revision: 18-Apr-16 3Document Number: 89432

For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com

THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT

ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

RATINGS AND CHARACTERISTICS CURVES (TA = 25 °C unless otherwise noted)

Fig. 1 - Peak Pulse Power Rating Curve

Fig. 2 - Pulse Power or Current vs. Initial Junction Temperature

Fig. 3 - Pulse Waveform

Fig. 4 - Typical Junction Capacitance

Fig. 5 - Power Derating Curve

Fig. 6 - Typical Transient Thermal Impedance

100

1101001000

PPM

- Peak Pulse Power (kW)

td - Pulse Width (µs)

100

050 100 150 200

TJ - Initial Temperature (°C)

Peak Pulse Power (P

) or Current (I

)

Derating in Percentage (%)

100

150

tr = 10 µs

tr = 8 µs

Peak Value

IPPM

Half Value -

IPPM

IPP

01.0 2.0 3.0 4.0

t - Time (ms)

PPM

- Peak Pulse Current (% I

RSM

)

TJ = 25 °C

Pulse Width (td)

is defined as the Point

where the Peak Current

decays to 50 % of IPPM

td = 1000 µs

td = 20 µs

100

10 000

1 000 000

10 20 30 40 50

- Junction Capacitance (pF)

Reverse Voltage (V)

= 25 °C

f = 1.0 MHz

sig

= 50 mV

p-p

Measured at

Zero Bias

Measured at

Stand-Off Voltage V

1000

100 000

6.5

Temperature (°C)

PD - Power Dissipation (W)

1501000 20050 1751257525

6.0

5.5

5.0

4.5

4.0

3.5

3.0

2.5

2.0

1.5

1.0

0.5 T

Mounted on Minimum

Recommended Pad Layout

, Mounted on

Innite Heatsink

Transient Thermal Impedance (°C/W)

tp - Pulse Duration (s)

100

0.01 0.1 1 10 100 1000

5KASMC10A thru 5KASMC43A

www.vishay.com Vishay General Semiconductor

Revision: 18-Apr-16 4Document Number: 89432

For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com

THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT

ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

PACKAGE OUTLINE DIMENSIONS in inches (millimeters)

0.260 (6.60)

0.280 (7.11)

0.006 (0.152)

0.012 (0.305)

0.030 (0.76)

0.060 (1.52)

0.008 (0.2)

0.305 (7.75)

0.320 (8.13)

0.220 (5.59)

0.246 (6.22)

0.079 (2.06)

0.103 (2.62)

0.114 (2.90)

0.126 (3.20)

Cathode Band

DO-214AB (SMC J-Bend)

0.320 REF.

Mounting Pad Layout

0 (0)

0.185 (4.69)

MAX.

0.126 (3.20)

MIN.

0.060 (1.52)

MIN.

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Revision: 13-Jun-16 1Document Number: 91000

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

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