ABB Semiconductors AG reserves the right to change specifications without notice.
VDRM = 4500 V
ITGQM = 3000 A
ITSM =30kA
VT0 =1.17V
rT=0.31
mΩ
VDClin = 2800 V
Gate turn-off Thyristor
5SGT 30J4502
PRELIMINARY Doc. No. 5SYA 1215-03 Aug. 2000
• Patented free-floating silicon technology
• Low on-state and switching losses
• Annular gate electrode
• Industry standard housing
• Cosmic radiation withstand rating
The 5SGT 30J4502 is an 85 mm buffered layer, Transparent Emitter (non-shorted anode)
GTO with exceptionally low dynamic and static losses and gate drive requirements.
Housed in an industry-standard 108 mm wide housing, it is ideally suited for high reliability
applications such as Transportation and Medium Voltage Drives.
Blocking
VDRM Repetitive peak off- stat e voltage 4500 V VGR ≥ 2V
VRRM Repetitive peak revers e voltage 17 V
IDRM Repetitive peak off-state current ≤100 mA VD = VDRM VGR ≥ 2V
IRRM Repetitive peak reverse current ≤50 mA VR = VRRM RGK = ∞
VDClink Permanent DC voltage for 100
FIT fa ilu re ra te 2800 V -40 ≤ Tj ≤ 125 °C. Ambient cosmic
radiation at sea level in open air.
Mechanical data (see Fig. 4) min. 36 kN
FmMounting force max. 44 kN
AAcceleration:
Device unclamped
Device clamped 50
200 m/s2
m/s2
MWeight 1.3 kg
DSSurface creepage distance ≥33 mm
DaAir strike distance ≥15 mm
5SGT 30J4502
ABB Semiconductors AG reserves the right to change specifications without notice.
Doc. No. 5SYA 1215-03 Aug. 2000 page 2 of 6
GTO Data
On-state
ITAVM Max. average on-state current 1450 A Half sine wave, TC = 85 °C
ITRMS Max. RMS on-state current 2280 A
ITSM 30 kA tP=10msT
j = 125°CMax. peak non-repetitive
surge current 50 kA tP= 1 ms Afte r surge:
I2t Limiting load int egral 2.88⋅106A2st
P=10msV
D = VR = 0V
0.80⋅106A2st
P=1ms
VTOn-state voltage 2.10 V IT= 3000 A
VT0 Threshold voltage 1.17 V IT= 400 - 4000 A Tj = 125 °C
rTSlope resistance 0.31 mΩ
IHHolding current 100 A Tj=25 °C
Gate
VGT Gate trigger voltage 1.2 V VD= 24 V Tj = 25 °C
IGT Gate trigger current 1.0 A RA=0.1 Ω
VGRM Repetit ive peak reverse voltag e 17 V
IGRM Repetitive peak reverse current 20 mA VGR =V
GRM
Turn-on sw itching
di/dtcrit Max. rate of rise of on-state 400 A/µ s f = 200Hz I T = 2500 A, Tj = 125 °C
curren t 800 A/µs f = 1Hz IGM = 25 A, diG/dt = 20 A/µs
tdDelay time 2.0 µs VD=0.5V
DRM Tj= 125 °C
trRise time 4.5 µs IT= 2500 A di/dt = 300 A/µs
ton(min) Min. on-t ime 100 µs IGM =25Adi
G/dt = 20 A/µs
Eon Turn-on energy per pulse 2.00 Ws CS=6µFR
S=5
Ω
Turn-off switching 3000 A VDM =V
DRM diGQ/dt = 40 A/µsITGQM Max controllable turn-off
current CS=6 µF L
S≤0.2 µH
tsStorage time 25.0 µs VD=½VDRM VDM =V
DRM
tfFall time 3.0 µ s Tj=125°Cdi
GQ/dt = 40 A/µs
toff(min) Min. off-time 100 µs ITGQ =I
TGQM
Eoff Turn-off energy per pulse 6.5 W s CS=6µFR
S=5
Ω
IGQM Peak turn-off gate current 1000 A LS≤0.2 µH
5SGT 30J4502
ABB Semiconductors AG reserves the right to change specifications without notice.
Doc. No. 5SYA 1215-03 Aug. 2000 page 3 of 6
Thermal
TjStorage and operating -40...125°C
junction temperature range
RthJC Thermal resistance 22 K/kW Anode side cooled
junction to case 27 K/kW Cathode side cooled
12 K/kW Double side cooled
RthCH Thermal resistance case to 6 K/kW Single side cooled
heat sink 3 K/kW Double side cooled
i1234
RI (K/kW ) 5.4 4.5 1.7 0.4
Anal ytical f unction for transient thermal
impedance:
)e-(1R = (t)Z 4
1i
/t-
thJC i
∑
=
i
τ
τi (s) 1.2 0.17 0.01 0.001
Fig. 1 Transient thermal impedance, junction to case.
5SGT 30J4502
ABB Semiconductors AG reserves the right to change specifications without notice.
Doc. No. 5SYA 1215-03 Aug. 2000 page 4 of 6
Fig. 2 On-state characteristics
5SGT 30J4502
ABB Semiconductors AG reserves the right to change specifications without notice.
Doc. No. 5SYA 1215-03 Aug. 2000 page 5 of 6
Fig. 3 General current and voltage waveforms with GTO-specific symbols
Fig. 4 Outline drawing. All dimensions are in
millimeter s and represent nominal values
unless stated otherwise.
5SGT 30J4502
ABB Semiconductors AG reserves the right to change specifications without notice.
ABB Semiconductors AG Doc. No. 5SYA 1215-03 Aug. 2000
Fabri kstra sse 2
CH-5600 Lenzburg, Switzerland
Tel: +41 (0)62 888 641 9
Fax: +41 (0)62 888 630 6
E-mail info@ch.abb.com
Internet www.abbsem.com
Reverse avalanche capability
In operation with an antiparallel freewheeling diode, the GTO reverse voltag e VR may exceed the rate
value VRRM due to stray inductance and diode turn-on voltage spike at high di/dt. The GTO is then
driven into reverse avalanche. This condition is not dangerous for the GTO provided avalanche time
and current are below 10 µs and 1000 A respectively. However, gate voltage must remain negative
during this time. Recommendation : VGR = 10… 15 V.
