TO-220 Plastic-Encapsulated Transistors
TIP31/31A/31B/31C TRANSISTOR (NPN)
FEATURES
Power dissipation
PCM: 2 W (Tamb=25℃)
Collector current
ICM: 3 A
Collector-base voltage
V(BR)CBO: TIP31: 40 V
TIP31A: 60 V
TIP31B: 80 V
TIP31C: 100 V
Operating and storage junction temperature range
TJ, T stg: -55℃ to +150 ℃
ELECTRICAL CHARACTERISTICS (Tamb=25℃ unless otherwise specified)
Parameter Symbol Test conditions MIN MAX UNIT
31
Collector-base breakdown voltage 31A
31B
31C
V(BR)CBO Ic= 100 µA, IE=0
40
60
80
100
V
31
Collector-emitter breakdown voltage 31A
31B
31C
V(BR)CEO Ic= 30 mA, IB=0
40
60
80
100
V
E mitter-base break down vol t age V(BR)EBO I
E= 100µA, IC=0 5 V
31
Collector cut-off current 31A
31B
31C
ICBO
VCB= 40V, IE=0
VCB= 60V, IE=0
VCB= 80V, IE=0
VCB= 100V, IE=0
0.2 mA
Collector cut-off curremt 31/31A
31B/31C
ICEO VCE= 30V , IB= 0
VCE= 60V , IB= 0 0.3
0.3 mA
Emitter cut-off current IEBO V
EB=5V, IC=0 1 mA
hFE(1) V
CE= 4V, IC= 3A 10 50
DC current gain hFE(2) V
CE= 4V, IC= 1A 25
Collector-emitter saturation voltage VCE(sat) I
C=3A, IB=375mA 1.2 V
Base-emitter voltage VBE(on) V
CE= 4V, IC=3A 1.8 V
Transition fre quency fT V
CE=10V , IC=500mA 3 MHZ
1 2 3
TO-220
1. BASE
2. COLLECTOR
3. EMITTER
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