DATA SH EET
Product data sheet
Supersedes data of 1997 Apr 22
1999 Apr 23
DISCRETE SEMICONDUCTORS
BSP50; BSP51; BSP52
NPN Darlington transistors
handbook, halfpage
M3D087
1999 Apr 23 2
NXP Semiconductors Product data sheet
NPN Darlington transistors BSP50; BSP51; BSP52
FEATURES
High current (max. 1 A)
Low voltage (max. 80 V)
Integrated diode and resis tor .
APPLICATIONS
Industrial high gain amplification .
DESCRIPTION
NPN Darlington transistor in a SOT223 plastic package.
PNP complements: BSP60, BSP61 and BSP62.
PINNING
PIN DESCRIPTION
1base
2,4 collector
3emitter
Fig.1 Simplified outline (SOT223) and symbol.
4
123
MAM265
Top view
1
2, 4
3
LIMITING VALUES
In accordance with th e Absolute Ma ximum Ratin g System (IEC 134).
Note
1. Device mounted on a pr inted-circuit board, single side d copper, tinplated, mounting pad for collector 1 cm2.
For other mounting conditions, see “Thermal considerations for the SOT223 in the General Part of associated
Handbook”.
SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT
VCBO collector-base volta ge open emitter
BSP50 60 V
BSP51 80 V
BSP52 90 V
VCES collector-emitter voltage VBE = 0
BSP50 45 V
BSP51 60 V
BSP52 80 V
VEBO emitter-base vo ltage open collector 5 V
ICcollector current (DC) 1 A
ICM peak collector current 2 A
IBbase current (DC) 100 mA
Ptot total power dissipation Tamb 25 °C; note 1 1.25 W
Tstg storage temperature 65 +150 °C
Tjjunction temperature 150 °C
Tamb operating ambient temperature 65 +150 °C
1999 Apr 23 3
NXP Semiconductors Pr oduct data shee t
NPN Darlington transistors BSP50; BSP51; BSP52
THERMAL CHARACTE RISTICS
Note
1. Device mounted on a pr inted-circuit board, single side d copper, tinplated, mounting pad for collector 1 cm2.
For other mounting conditions, see “Thermal considerations for the SOT223 in the General Part of associated
Handbook“.
CHARACTERISTICS
Tj = 25 °C unless otherwise specified.
Note
1. Pulse test: tp 300 μs; δ 0.02.
SYMBOL PARAMETER CONDITIONS VALUE UNIT
Rth j-a thermal resistance from junction to ambient note 1 96 K/W
Rth j-s thermal resistance from junction to solder point 17 K/W
SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT
ICES collector cut-off current
BSP50 VBE = 0; VCE = 45 V −−50 nA
BSP51 VBE = 0; VCE = 60 V −−50 nA
BSP52 VBE = 0; VCE = 80 V −−50 nA
IEBO emitter cut-off current IC = 0; VEB = 4 V −−50 nA
hFE DC current gain VCE = 10 V; note 1; see Fig.2
IC = 150 mA 1 000
IC = 500 mA 2 000
VCEsat collector-emitter saturation
voltage IC = 500 mA; IB = 0.5 mA −−1.3 V
IC = 500 mA; IB = 0.5 mA;
Tj = 150 °C−−1.3 V
VBEsat base-emitt er satura tion
voltage IC = 500 mA; IB = 0.5 mA −−1.9 V
fTtransition freque ncy IC = 500 mA; VCE = 5 V; f = 100 MHz 200 MHz
Switching times (between 10% and 90% levels); see Fig.3
ton turn-on time ICon = 500 mA; IBon = 0.5 mA;
IBoff = 0.5 mA 500 ns
toff turn-off time 1 300 ns
1999 Apr 23 4
NXP Semiconductors Pr oduct data shee t
NPN Darlington transistors BSP50; BSP51; BSP52
Fig.2 DC current gain; typical values.
handbook, full pagewidth
0
5000
1000
2000
3000
4000
MGD838
10
1
1IC (mA)
hFE
10 10
2
10
3
VCE = 10 V.
Fig.3 Test circuit for switching times.
handbook, full pagewidth
RC
R2
R1
DUT
MLB826
Vo
RB(probe)
450 Ω
(probe)
450 Ω
oscilloscope oscilloscope
V
BB
Vi
V
CC
Vi = 10 V; T = 200 μs; tp = 6 μs; tr = tf 3 ns.
R1 = 56 Ω; R2 = 10 kΩ; RB = 10 kΩ; RC = 18 Ω.
VBB = 1.8 V; VCC = 10.7 V.
Oscilloscope: input impedance Zi = 50 Ω.
1999 Apr 23 5
NXP Semiconductors Pr oduct data shee t
NPN Darlington transistors BSP50; BSP51; BSP52
PACKAGE OUTLINE
UNIT A1bpcDEe1HELpQywv
REFERENCES
OUTLINE
VERSION EUROPEAN
PROJECTION ISSUE DATE
IEC JEDEC EIAJ
mm 0.10
0.01
1.8
1.5 0.80
0.60
b1
3.1
2.9 0.32
0.22 6.7
6.3 3.7
3.3 2.3
e
4.6 7.3
6.7 1.1
0.7 0.95
0.85 0.1 0.10.2
DIMENSIONS (mm are the original dimensions)
SOT223 SC-73 97-02-28
99-09-13
wM
bp
D
b1
e1
e
A
A1
Lp
Q
detail X
HE
E
vMA
AB
B
c
y
0 2 4 mm
scale
A
X
132
4
P
lastic surface mounted package; collector pad for good heat transfer; 4 leads SOT22
3
1999 Apr 23 6
NXP Semiconductors Product data sheet
NPN Darlington transistors BSP50; BSP51; BSP52
DATA SHEET STATUS
Notes
1. Please consult the most rec en tly issued document before initiating or completing a design.
2. The product s tatus of device(s) described in this document may ha ve changed since this document was published
and may differ in case of multiple devices. The latest product status information is available on the Internet at
URL http://www.nxp.com.
DOCUMENT
STATUS(1) PRODUCT
STATUS(2) DEFINITION
Objective data sheet Development This document contains data from the objective specification for pro duct
development.
Preliminary data sheet Qualification This document contains data from the preliminary specification.
Product data sheet Production T his document contains the product specification.
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Applications Applications that are described herein for
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Limiting values Stress above one or more limiting
values (as defined in the Absolute Maximum Ratings
System of IEC 60134) may cause permanent damage to
the device. Limiting values are stress ratings only and
operation of the device at these or any other co nditions
above those given in the Characteristics sections of this
document is not implied. Exposure to limiting values for
extended periods may affect device reliability.
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Quick refer ence data The Quick reference data is an
extract of th e product data given in the Limiting values an d
Characteristics sections of this docu ment, and as such is
not complete, exhaus tive or legally binding.
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Customer notification
This data sheet was changed to reflect the new company name NXP Semiconductors, including new legal
definitions and disclaimer s. No changes were made to the technical content, exc ept for package outline
drawings which were updated to the latest version.
Printed in The Netherlands 115002/00/03/pp7 Date of releas e: 1999 Apr 23 Document orde r number: 9397 750 05809