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Semiconductor data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer application by customer’s
technical experts. ON Semiconductor does not convey any license under its patent rights nor the rights of others. ON Semiconductor products are not designed, intended, or authorized for use as a critical component in life support systems or any FDA
Class 3 medical devices or medical devices with a same or similar classification in a foreign jurisdiction or any devices intended for implantation in the human body. Should Buyer purchase or use ON Semiconductor products for any such unintended
or unauthorized application, Buyer shall indemnify and hold ON Semiconductor and its officers, employees, subsidiaries, afliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out
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G
D
S
2N5457
2N5458
2N5459
MMBF5457
MMBF5458
MMBF5459
N-Channel General Purpose Amplifier
This device is a low level audio amplifier and switching transistors,
and can be used for analog switching applications. Sourced from
Process 55.
Absolute Maximum Ratings* T A = 25°C unless otherwise noted
Symbol Parameter Value Units
VDG Drain-Gate Voltage 25 V
VGS Gate-Source Voltage - 25 V
IGF Forward Ga te Current 10 mA
TJ, Tstg Operating and Stora ge Junction Tempe rature Range -55 to +150 °C
*These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.
Thermal Characteristics T A = 25°C unless otherwise noted
NOTES:
1) These ratings are based on a maximum junction temperature of 150 degrees C.
2) These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations.
GSDTO-92 SOT-23
Mark: 6D / 61S / 6L
*Device mounted on FR-4 PCB 1.6" X 1.6" X 0.06."
1997 Fairchild Semiconductor Corporation
NOTE: Source & Drain
are interchangeable
2N5457 / 5458 / 5459 / MMBF5457 / 5458 / 5459
Symbol Characteristic Max Units
2N5457-5459 *MMBF5457-5459
PDTotal Device Dissipation
Derate above 25°C625
5.0 350
2.8 mW
mW/°C
RθJC Thermal Resis t ance, Junct i on to Cas e 125 °C/W
RθJA Thermal Resis t ance, Junct i on to A mbient 357 556 °C/W
5
Electrical Characteristics T A = 25°C unless otherwise noted
OFF CHARACTERISTICS
Symbol Parameter Test Conditions Min Typ Max Units
ON CHARACTERISTICS
SMALL SIGNAL CHARACTERISTICS
V(BR)GSS Gate-Sourc e Breakdown Voltage IG = 10 µA, VDS = 0 - 25 V
IGSS Gate Reverse Current VGS = -15 V, VDS = 0
VGS = -15 V, VDS = 0, TA = 100°C- 1. 0
- 200 nA
nA
VGS(off) Gate-Source Cutoff Voltage VDS = 15 V, ID = 10 nA 5457
5458
5459
- 0.5
- 1.0
- 2.0
- 6.0
- 7.0
- 8.0
V
V
V
VGS Gate-Sourc e V o ltage VDS = 15 V, ID = 100 µA5457
VDS = 15 V, ID = 200 µA5458
VDS = 15 V, ID = 400 µA5459
- 2.5
- 3.5
- 4.5
V
V
V
IDSS Zero-Gate V ol tage Drain Current* VDS = 15 V, V GS = 0 5457
5458
5459
1.0
2.0
4.0
3.0
6.0
9.0
5.0
9.0
16
mA
mA
mA
gfs Forward Transfer Conductance* VDS = 15 V, VGS = 0, f = 1.0 kHz
5457
5458
5459
1000
1500
2000
5000
5500
6000
µ
mhos
µmhos
µ
mhos
gos Output Conductanc e* VDS = 15 V, VGS = 0, f = 1.0 kHz 10 50
µ
mhos
Ciss Input Capacitance VDS = 15 V, VGS = 0, f = 1.0 MHz 4.5 7.0 pF
Crss Reverse Transfer Capacitanc e VDS = 15 V, VGS = 0, f = 1.0 MHz 1.5 3.0 pF
NF Noise Figure VDS = 15 V, VGS = 0, f = 1.0 kHz,
RG = 1.0 megohm, B W = 1. 0 Hz 3.0 dB
T ransfer Characteristics
Transfer Characteristics
Typical Characteristics
*Pulse Test: Pulse Width 300 ms, Duty Cycle 2%
2N5457 / 5458 / 5459 / MMBF5457 / 5458 / 5459
N-Channel General Purpose Amplifier
(continued)
2N5457 / 5458 / 5459 / MMBF5457 / 5458 / 5459
Typical Characteristics (continued)
Output Conductance vs.
Drain Current
Transfer Characteristics
T ransconductance vs.
Drain Current
Parameter Interaction
T ransfer Characteristics
Common Drain-Source
N-Channel General Purpose Amplifier
(continued)
5
Typical Characteristics (continued)
Capacitance vs. VoltageLeakage Current vs. Voltage
Channel Resistance vs.
Temperature Noise V oltage vs.
Frequency
Power Dissipation vs
Ambient Temperature
0 25 50 75 100 125 150
0
100
200
300
400
500
600
700
TEMPERATURE ( C)
P - POWER DIS SIP ATIO N (m W )
D
o
TO-92
SOT-23
2N5457 / 5458 / 5459 / MMBF5457 / 5458 / 5459
N-Channel General Purpose Amplifier
(continued)
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ON Semiconductor and are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries.
ON Semiconductor owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of ON Semiconductor’s product/patent
coverage may be accessed at www.onsemi.com/site/pdf/PatentMarking.pdf. ON Semiconductor reserves the right to make changes without further notice to any products herein.
ON Semiconductor makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability
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regardless of any support or applications information provided by ON Semiconductor. “Typical” parameters which may be provided in ON Semiconductor data sheets and/or
specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer
application by customer’s technical experts. ON Semiconductor does not convey any license under its patent rights nor the rights of others. ON Semiconductor products are not
designed, intended, or authorized for use as a critical component in life support systems or any FDA Class 3 medical devices or medical devices with a same or similar classification
in a foreign jurisdiction or any devices intended for implantation in the human body. Should Buyer purchase or use ON Semiconductor products for any such unintended or unauthorized
application, Buyer shall indemnify and hold ON Semiconductor and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and
expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such
claim alleges that ON Semiconductor was negligent regarding the design or manufacture of the part. ON Semiconductor is an Equal Opportunity/Affirmative Action Employer. This
literature is subject to all applicable copyright laws and is not for resale in any manner.
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