2SA1832FT TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT process) 2SA1832FT Audio frequency General Purpose Amplifier Applications * High voltage: VCEO = -50 V * High current: IC = -150 mA (max) * High hFE: hFE = 120 to 400 * Excellent hFE linearity * Complementary to 2SC4738F Unit: mm : hFE (IC = -0.1 mA)/hFE (IC = -2 mA) = 0.95 (typ.) Absolute Maximum Ratings (Ta = 25C) Characteristics Symbol Rating Unit Collector-base voltage VCBO -50 V Collector-emitter voltage VCEO -50 V Emitter-base voltage VEBO -5 V IC -150 mA Base current IB -30 mW Collector power dissipation PC 100 mW Collector current Junction temperature Storage temperature range Tj 125 C Tstg -55 to 125 C JEDEC Note: Using continuously under heavy loads (e.g. the application of high JEITA temperature/current/voltage and the significant change in TOSHIBA 2-1B1A temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook ("Handling Precautions"/"Derating Concept and Methods") and individual reliability data (i.e. reliability test report and estimated failure rate, etc). Marking Type Name hFE Rank SY Electrical Characteristics (Ta = 25C) Characteristics Symbol Test Condition Min Typ. Max Unit Collector cut-off current ICBO VCB = -50 V, IE = 0 -0.1 A Emitter cut-off current IEBO VEB = -5 V, IC = 0 -0.1 A 120 400 IC = -100 mA, IB = -10 mA -0.1 -0.3 V VCE = -10 V, IC = -1 mA 80 MHz VCB = -10 V, IE = 0, f = 1 MHz 4 7 pF hFE DC current gain (Note) Collector-emitter saturation voltage Transition frequency Collector output capacitance Note: hFE Classification ( ) Marking symbol VCE (sat) fT Cob VCE = -6 V, IB = -2 mA Y (Y): 120 to 140, GR (G): 200 to 400 1 2007-11-01 2SA1832FT IC - VCE IB - VBE -240 Common emitter Ta = 25C Common emitter -500 VCE = -6 V -1.5 -300 -1.0 -100 -160 Base current IB (A) (mA) -2.0 Collector current IC -1000 -0.5 -80 IB = -0.2 mA 0 0 0 -2 -4 -6 Collector-emitter voltage -50 -30 Ta = 100C 25 -25 -0.6 -0.8 -10 -5 -3 -8 VCE (V) -1 -0.5 -0.3 0 hFE - IC -0.2 -1.0 -1.2 -1.4 VBE (V) VCE = -6 V VCE = -1 V 500 Ta = 100C 300 25 fT - IC 3000 100 Transition frequency fT (MHz) -25 50 30 -0.1 Collector-emitter saturation voltage VCE (sat) (V) -0.4 Base-emitter voltage Common emitter 1000 -0.3 -1 -3 -10 -30 Collector current IC (mA) -100 VCE (sat) - IC -0.5 -0.3 Common emitter Common emitter VCE = -10 V Ta = 25C 1000 500 300 100 50 30 10 -0.1 IC/IB = 10 -0.3 -0.1 -0.05 Ta = 100C -0.03 -1 -3 -10 -30 Collector current IC (mA) -100 25 -25 -0.01 -0.1 -0.3 -1 -3 -10 -30 PC - Ta -100 120 (mA) 100 VBE (sat) - IC Collector power dissipation Base-emitter saturation voltage VBE (sat) (V) PC Collector current IC (mW) DC current gain hFE 2000 -5 -3 -1 Common emitter IC/IB = 10 Ta = 25C -0.5 -0.3 -0.1 -0.1 -0.3 -1 -3 -10 -30 Collector current IC (mA) 80 60 40 20 0 0 -100 20 40 60 80 100 120 140 Ambient temperature Ta (C) 2 2007-11-01 2SA1832FT RESTRICTIONS ON PRODUCT USE * Toshiba Corporation, and its subsidiaries and affiliates (collectively "TOSHIBA"), reserve the right to make changes to the information in this document, and related hardware, software and systems (collectively "Product") without notice. * This document and any information herein may not be reproduced without prior written permission from TOSHIBA. Even with TOSHIBA's written permission, reproduction is permissible only if reproduction is without alteration/omission. * Though TOSHIBA works continually to improve Product's quality and reliability, Product can malfunction or fail. Customers are responsible for complying with safety standards and for providing adequate designs and safeguards for their hardware, software and systems which minimize risk and avoid situations in which a malfunction or failure of Product could cause loss of human life, bodily injury or damage to property, including data loss or corruption. 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