Elektronische Bauelemente
2N7002T
0.115A , 60V , RDS(ON) 7.2Ω
N-Channel Enhancement MOSFET
13-Dec-2011 Rev. C Page 1 of 3
http://www.SeCoSGmbH.com/ Any changes of specifica tion will not be informed individually.
RoHS Compliant Product
A suffix of “-C” specifies halogen & lead-free
FEATURES
High density cell design for low RDS(ON).
Voltage controlled small signal switch.
Rugged and reliable.
High saturation current capability.
MARKING
PACKAGE INFORMATION
Package MPQ Leader Size
SOT-523 3K 7 inch
ABSOLUTE MAXIMUM RATINGS (TA=25°C unless otherwise specified)
Parameter Symbol Rating Unit
Drain-Source Voltage VDS 60 V
Drain Current ID 115 mA
Power Dissipation PD 150 mW
Maximum Junction to Ambient RθJA 833 °C / W
Operating Junction Temperature Range TJ 150 °C
Operating Storage Temperature Range TSTG -55~150 °C
Gate
Source
Drain
SOT-523
Top View
A
L
M
C B
D
GH J
F
K
E
1
2
3
12
3
Millimete
r
Millimete
r
REF. Min. Max. REF. Min. Max.
A 1.5 1.7 G - 0.1
B 1.45 1.75 H 0.55 REF.
C 0.75 0.85 J 0.1 0.2
D 0.7 0.9 K -
E 0.9 1.1 L 0.5 TYP.
F 0.15 0.25 M 0.25 0.325
K72
Elektronische Bauelemente
2N7002T
0.115A , 60V , RDS(ON) 7.2Ω
N-Channel Enhancement MOSFET
13-Dec-2011 Rev. C Page 2 of 3
http://www.SeCoSGmbH.com/ Any changes of specifica tion will not be informed individually.
ELECTRICAL CHARACTERISTICS (TA=25°C unless otherwise specified)
Parameter Symbol Min. Typ. Max. Unit Teat Conditions
Static
Drain-Source Breakdown Voltage V(BR)DSS 60 - - V VGS =0, ID =250μA
Gate Threshold Voltage VGS(th) 1 - - V VDS=VGS, ID=250μA
Gate-Body Leakage IGSS - - ±80 nA VDS=0, VGS= ±25V
Zero Gate Voltage Drain Current IDSS - - 80 nA VDS =60V, VGS=0
On-State Drain Current ID(ON) 500 - - mA VGS =10V, VDS =7V
1 - 7.2 VGS=10V, ID=500mA
Drain-Source On Resistance RDS(ON)
1 - 7.2
Ω
VGS=5V, ID =50mA
Forward transfer admittance gfs 80 - 500 mS VDS=10V, ID =200mA
0.5 - 3.75 VGS=10V, ID =500mA
Drain-Source On Voltage VDS(ON)
0.05 - 0.375
V
VGS=5V, ID =50mA
Diode Forward Voltage VSD 0.55 - 1.2 V IS=115mA, VGS=0
Input Capacitance Ciss - - 50
Output Capacitance Coss - - 25
Reverse Transfer Capacitance Crss - - 5
pF VDS=25V, VGS=0, f=1MHz
Switching Ti me
Turn-On Time Td(ON) - - 20
Turn-Off Time Td(OFF) - - 40
nS
VGEN=10V, VDD= 25V,
ID=500mA, RG=25Ω,
RL=50Ω
Elektronische Bauelemente
2N7002T
0.115A , 60V , RDS(ON) 7.2Ω
N-Channel Enhancement MOSFET
13-Dec-2011 Rev. C Page 3 of 3
http://www.SeCoSGmbH.com/ Any changes of specifica tion will not be informed individually.
TYPICAL CHARACTERISTIC CURVE
