Elektronische Bauelemente
2N7002T
0.115A , 60V , RDS(ON) 7.2Ω
N-Channel Enhancement MOSFET
13-Dec-2011 Rev. C Page 2 of 3
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ELECTRICAL CHARACTERISTICS (TA=25°C unless otherwise specified)
Parameter Symbol Min. Typ. Max. Unit Teat Conditions
Static
Drain-Source Breakdown Voltage V(BR)DSS 60 - - V VGS =0, ID =250μA
Gate Threshold Voltage VGS(th) 1 - - V VDS=VGS, ID=250μA
Gate-Body Leakage IGSS - - ±80 nA VDS=0, VGS= ±25V
Zero Gate Voltage Drain Current IDSS - - 80 nA VDS =60V, VGS=0
On-State Drain Current ID(ON) 500 - - mA VGS =10V, VDS =7V
1 - 7.2 VGS=10V, ID=500mA
Drain-Source On Resistance RDS(ON)
1 - 7.2
Ω
VGS=5V, ID =50mA
Forward transfer admittance gfs 80 - 500 mS VDS=10V, ID =200mA
0.5 - 3.75 VGS=10V, ID =500mA
Drain-Source On Voltage VDS(ON)
0.05 - 0.375
V
VGS=5V, ID =50mA
Diode Forward Voltage VSD 0.55 - 1.2 V IS=115mA, VGS=0
Input Capacitance Ciss - - 50
Output Capacitance Coss - - 25
Reverse Transfer Capacitance Crss - - 5
pF VDS=25V, VGS=0, f=1MHz
Switching Ti me
Turn-On Time Td(ON) - - 20
Turn-Off Time Td(OFF) - - 40
nS
VGEN=10V, VDD= 25V,
ID=500mA, RG=25Ω,
RL=50Ω