BA
T5
4T
W/A
D
W/C
D
W/
SD
W/B
R
W
SCHOT
TKY
DIODE
F
EA
TURE
S
Pow
er
dis
sipati
on
P
D:
2
0
0
m
W
(
T
a
m
b
=
2
5
℃
)
For
w
ard
C
urr
ent
I
F:
2
0
0
m
A
Rev
ers
e
V
oltag
e
V
R
:
3
0
V
Op
erati
ng and st
orag
e juncti
on tem
p
e
r
ature r
ange
T
J
, T
stg
: -
55
℃
to +150
℃
EL
ECT
RIC
AL
CHARAC
TE
RIST
IC
S
(T
am
b=
25
℃
unless o
therw
ise sp
ecified)
P
a
r
a
m
e
t
e
r
S
y
m
b
o
l
T
e
s
t
c
o
n
d
i
t
i
o
n
s
M
I
N
M
A
X
U
N
I
T
Reverse brea
kdown v
oltage
V
(BR)
I
R
= 100
µ
A
30
V
Reverse
voltage
leakage
current
I
R
V
R
=25V
2
µ
A
For
ward
v
olta
ge
V
F
I
F
=0.1mA
I
F
=1
m
A
I
F
=10
m
A
I
F
=30
m
A
I
F
=100
mA
240
320
400
500
1000
mV
Diode cap
acitance
C
D
V
R
=1V
,
f
=1M
Hz
10
pF
Reverse reco
very t
ime
t
r r
I
F
=10
mA
through I
R
=1
0m
A
to I
R
=1.0mA
R
C
=100
Ω
5
nS
SO
T
-363
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