MEA 250-12 DA MEK 250-12 DA MEE 250-12 DA Fast Recovery Epitaxial Diode (FRED) Module VRRM = 1200 V IFAVM = 260 A trr = 450 ns Preliminary data 2 VRSM VRRM V V 1200 1200 Type MEA 250-12DA 1 2 3 1 MEK 250-12DA 3 1 2 MEE 250-012DA 3 1 2 3 Symbol Test Conditions IFRMS IFAVM yy IFRM TC = 75C TC = 75C; rectangular, d = 0.5 tP < 10 ms; rep. rating, pulse width limited by TVJM Maximum Ratings 367 260 1480 A A A IFSM TVJ = 45C; t = 10 ms (50 Hz), sine t = 8.3 ms (60 Hz), sine 2400 2640 A A TVJ = 150C; t = 10 ms (50 Hz), sine t = 8.3 ms (60 Hz), sine 2160 2380 A A t = 10 ms (50 Hz), sine t = 8.3 ms (60 Hz), sine 28800 29300 A2s A2s TVJ = 150C; t = 10 ms (50 Hz), sine t = 8.3 ms (60 Hz), sine 23300 23800 A2s A2s -40...+150 -40...+125 110 C C C 875 W 3000 3600 V~ V~ Features International standard package with DCB ceramic base plate Planar passivated chips Short recovery time Low switching losses Soft recovery behaviour Isolation voltage 3600 V~ UL registered E 72873 TVJ = 45C; TVJ Tstg TSmax Ptot Tc = 25C VISOL 50/60 Hz, RMS t = 1 min t=1s IISOL 1 mA Md Mounting torque (M6) Terminal connection torque (M6) dS dA a 2.25-2.75/20-25 Nm/lb.in. 4.50-5.50/40-48 Nm/lb.in. Weight Symbol Test Conditions IR TVJ = 25C TVJ = 25C TVJ = 125C VR = VRRM VR = 0.8 * VRRM VR = 0.8 * VRRM VF IF = 150 A; TVJ TVJ TVJ TVJ For power-loss calculations only RthJH RthJC DC current DC current IF = 300 A VR= 600 V -di/dt = 400 A/ms TVJ = 100C TVJ = 25C TVJ = 100C 450 IFAVM rating includes reverse blocking losses at TVJM, VR = 0.6 VRRM, duty cycle d = 0.5 Data according to IEC 60747 IXYS reserves the right to change limits, test conditions and dimensions (c) 2000 IXYS All rights reserved Advantages High reliability circuit operation Low voltage peaks for reduced protection circuits Low noise switching Low losses mm mm m/s2 150 g 12 3 60 = 125C = 25C = 125C = 25C 12.7 9.6 50 Characteristic Values (per diode) typ. max. VT0 rT trr IRM Applications Antiparallel diode for high frequency switching devices Free wheeling diode in converters and motor control circuits Inductive heating and melting Uninterruptible power supplies (UPS) Ultrasonic cleaners and welders Creeping distance on surface Strike distance through air Maximum allowable acceleration IF = 260 A; Dimensions in mm (1 mm = 0.0394") mA mA mA 1.38 1.69 1.54 1.80 V V V V 1.16 1.46 V mW 0.228 0.143 K/W K/W 500 55 83 ns A A 749 I2t 1-2 http://store.iiic.cc/ MEA 250-12 DA MEE 250-12 DA MEK 250-12 DA 80 C TVJ= 100C 70 VR = 600V 500 A 450 400 200 A TVJ= 100C 180 VR = 600V 160 IRM IF= 300A; max. 140 IF= 300A; typ. IF= 250A; typ. 120 I = 125A; typ. F Qr 60 IF= 300A; max. I = 300A; typ. 50 IF= 250A; typ. F I = 125A; typ. 40 F IF 350 300 TVJ=125C TVJ= 25C 250 200 100 80 30 60 150 20 40 100 10 50 0 0.0 0.5 1.0 2.0 V 2.5 1.5 20 0 100 A/ms 1000 -diF/dt VF Fig. 1 Forward current IF versus voltage drop VF per leg 1.4 400 ms 1000 600 A/ 800 -diF/dt 1200 100 A V 90 TVJ= 100C VR = 600V 1.0 IF= 300A; max. IF= 300A; typ. IF= 250A; typ. IF= 125A; typ. 800 600 IRM TVJ= 125C IF = 260A 80 trr 0.8 200 Fig. 3 Peak reverse current IRM versus -diF/dt 1000 Kf 0 Fig. 2 Reverse recovery charge Qr versus -diF/dt ns 1.2 0 VFR 70 400 Qr 0.4 200 0.2 0 s 2.0 tfr VFR tfr 60 1.5 50 40 0.6 2.5 1.0 30 20 0.5 10 0 40 80 120 C 160 0 200 400 TVJ Fig. 4 Dynamic parameters Qr, IRM versus junction temperature TVJ 600 A/ 800 ms 1000 -diF/dt Fig. 5 Recovery time trr versus -diF/dt 0 0 400 0.0 800 1200 A/ms diF/dt Fig. 6 Peak forward voltage VFR and tfr versus diF/dt Constants for ZthJS calculation: 0.25 K/W i 0.20 1 2 3 4 ZthJS thJH 0.15 Rthi (K/W) ti (s) 0.002 0.008 0.054 0.164 0.08 0.024 0.112 0.464 0.10 0.05 0.00 0.001 0.01 0.1 1s Fig. 7 Transient thermal impedance junction to heatsink 10 t (c) 2000 IXYS All rights reserved 2-2 http://store.iiic.cc/