Semiconductor Components Industries, LLC, 2001
June, 2000 – Rev. 3 1Publication Order Number:
BC635/D
BC635, BC637, BC639,
BC639-16
High Current Transistors
NPN Silicon
MAXIMUM RATINGS
Rating Symbol Value Unit
Collector-Emitter Voltage BC635
BC637
BC639
VCEO 45
60
80
Vdc
Collector-Base Voltage BC635
BC637
BC639
VCBO 45
60
80
Vdc
Emitter-Base Voltage VEBO 5.0 Vdc
Collector Current — Continuous IC1.0 Adc
Total Device Dissipation
@ TA = 25°C
Derate above 25°C
PD625
5.0 mW
mW/°C
Total Device Dissipation
@ TC = 25°C
Derate above 25°C
PD800
12 mW
mW/°C
Operating and Storage Junction
Temperature Range TJ, Tstg –55 to
+150 °C
THERMAL CHARACTERISTICS
Characteristic Symbol Max Unit
Thermal Resistance,
Junction to Ambient RθJA 200 °C/W
Thermal Resistance,
Junction to Case RθJC 83.3 °C/W
Device Package Shipping
ORDERING INFORMATION
BC635RL1 TO–92
http://onsemi.com
TO–92 (TO–226AA)
CASE 29
STYLE 14
2000/Tape & Reel
COLLECTOR
2
3
BASE
1
EMITTER
123
BC635ZL1 TO–92 2000/Ammo Pack
BC637 TO–92 5000 Units/Box
BC639 TO–92 5000 Units/Box
BC639RL1 TO–92 2000/Tape & Reel
BC639ZL1 TO–92 2000/Ammo Pack
BC639–16ZL1 TO–92 2000/Ammo Pack
BC635, BC637, BC639, BC639–16
http://onsemi.com
2
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted)
Characteristic Symbol Min Typ Max Unit
OFF CHARACTERISTICS
Collector–Emitter Breakdown Voltage (1)
(IC = 10 Adc, IB = 0) BC635
BC637
BC639
V(BR)CEO 45
60
80
—
—
—
—
—
—
Vdc
Collector–Emitter Zero–Gate Breakdown Voltage (1)
(IC = 100 Adc, IB = 0) BC639–16 V(BR)CES 120 — — Vdc
Collector–Base Breakdown Voltage
(IC = 100 µAdc, IE = 0) BC635
BC637
BC639
V(BR)CBO 45
60
80
—
—
—
—
—
—
Vdc
Emitter–Base Breakdown Voltage
(IE = 10 Adc, IC = 0) V(BR)EBO 5.0 — — Vdc
Collector Cutoff Current
(VCB = 30 Vdc, IE = 0)
(VCB = 30 Vdc, IE = 0, TA = 125°C)
ICBO —
——
—100
10 nAdc
µAdc
ON CHARACTERISTICS (1)
DC Current Gain
(IC = 5.0 mAdc, VCE = 2.0 Vdc)
(IC = 150 mAdc, VCE = 2.0 Vdc) BC635
BC637
BC639
BC639–16ZLT1
(IC = 500 mA, VCE = 2.0 V)
hFE 25
40
40
40
100
25
—
—
—
—
—
—
—
250
160
160
250
—
—
Collector–Emitter Saturation Voltage
(IC = 500 mAdc, IB = 50 mAdc) VCE(sat) — — 0.5 Vdc
Base–Emitter On Voltage
(IC = 500 mAdc, VCE = 2.0 Vdc) VBE(on) — — 1.0 Vdc
DYNAMIC CHARACTERISTICS
Current–Gain — Bandwidth Product
(IC = 50 mAdc, VCE = 2.0 Vdc, f = 100 MHz) fT— 200 — MHz
Output Capacitance
(VCB = 10 Vdc, IE = 0, f = 1.0 MHz) Cob — 7.0 — pF
Input Capacitance
(VEB = 0.5 Vdc, IC = 0, f = 1.0 MHz) Cib — 50 — pF
1. Pulse Test: Pulse Width ≤ 300 µs, Duty Cycle 2.0%.
BC635, BC637, BC639, BC639–16
http://onsemi.com
3
IC, COLLECTOR CURRENT (mA)
hFE, DC CURRENT GAIN
f, CURRENT-GAIN BANDWIDTH PRODUCT (MHz)
T
V, VOLTAGE (VOLTS)
V, TEMPERATURE COEFFICIENTS (mV/ C)°θ
1000
1
2
5
10
20
50
100
200
500
1001 2 3 4 5 7 10 20 30 40 50 70
VCE, COLLECTOR-EMITTER VOLTAGE (VOLTS)
Figure 1. Active Region Safe Operating Area
BC635
BC637
BC639
PD TA 25°C
PD TC 25°C
SOA = 1S
PD TC 25°C
PD TA 25°C
500
200
100
50
20 1 3 5 10 30 50 100 300 500 1000
IC, COLLECTOR CURRENT (mA)
Figure 2. DC Current Gain
VCE = 2 V
500
300
100
50
20 1 10 100 1000
IC, COLLECTOR CURRENT (mA)
Figure 3. Current–Gain — Bandwidth Product
VCE = 2 V
1
0.8
0.6
0.4
0.2
01 10 100 1000
IC, COLLECTOR CURRENT (mA)
Figure 4. “Saturation” and “On” Voltages
VBE(sat) @ IC/IB = 10
VBE(on) @ VCE = 2 V
VCE(sat) @ IC/IB = 10
-0.2
-1.0
-2.2
-1.6
1 3 5 10 30 50 100 300 500 1000
IC, COLLECTOR CURRENT (mA)
Figure 5. Temperature Coefficients
VCE = 2 VOLTS
∆T = 0°C to +100°C
θV for VBE
BC635, BC637, BC639, BC639–16
http://onsemi.com
4
PACKAGE DIMENSIONS
TO–92
(TO–226)
CASE 29–11
ISSUE AL NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M, 1982.
2. CONTROLLING DIMENSION: INCH.
3. CONTOUR OF PACKAGE BEYOND DIMENSION R
IS UNCONTROLLED.
4. LEAD DIMENSION IS UNCONTROLLED IN P AND
BEYOND DIMENSION K MINIMUM.
R
A
P
J
L
B
K
G
H
SECTION X–X
C
V
D
N
N
XX
SEATING
PLANE DIM MIN MAX MIN MAX
MILLIMETERSINCHES
A0.175 0.205 4.45 5.20
B0.170 0.210 4.32 5.33
C0.125 0.165 3.18 4.19
D0.016 0.021 0.407 0.533
G0.045 0.055 1.15 1.39
H0.095 0.105 2.42 2.66
J0.015 0.020 0.39 0.50
K0.500 --- 12.70 ---
L0.250 --- 6.35 ---
N0.080 0.105 2.04 2.66
P--- 0.100 --- 2.54
R0.115 --- 2.93 ---
V0.135 --- 3.43 ---
1
STYLE 14:
PIN 1. EMITTER
2. COLLECTOR
3. BASE
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BC635/D
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