2001 Infineon Technologies Corp. • Optoelectronics Division • San Jose, CA
www.infineon.com/opto • 1-888-Infineon (1-888-463-4636)
2–190 March 1, 2000-08
FEATURES
• Dual Version of SFH610 Series
• High Current Transfer Ratios
ILD610-1, 40-80%
ILD610-2, 63-125%
ILD610-3, 100-200%
ILD610-4, 160-320%
• Isolation Test Voltage, 5300 V
RMS
•
V
CEsat
0.25 (
≤
0.4) V at
I
F
=10 mA,
I
C
=2.5 mA
•
V
CEO
=70 V
• Underwriters Lab File #E52744
• VDE #0884 Available with Option 1
DESCRIPTION
The ILD610 Series is a dual channel optocoupler
series for high density applications. Each channel
consists of an optically coupled pair with a Gallium
Arsenide infrared LED and a silicon NPN pho-
totransistor. Signal information, including a DC
level, can be transmitted by the device while main-
taining a high degree of electrical isolation between
input and output. The ILD610 Series is the dual ver-
sion of SFH610 Series and uses a repetitive pin-out
configuration instead of the more common alternat-
ing pin-out used in most dual couplers.
Maximum Ratings
(Each Channel)
Emitter
Reverse Voltage ............................................... 6.0 V
Surge Forward Current (t
≤
10 ms) ................... 1.5 A
Total Power Dissipation ............................... 100 mW
Derate Linearly from 25
°
C....................... 1.3 mW/
°
C
DC Forward Current ....................................... 60 mA
Detector
Collector-Emitter Voltage................................... 70 V
Collector Current............................................ 50 mA
Collector Current (t
≤
1.0 ms)........................ 100 mA
Total Power Dissipation ............................... 150 mW
Derate Linearly from 25
°
C....................... 2.0 mW/
°
C
Package
Isolation Test Voltage (t=1.0 sec.)........... 5300 V
RMS
Isolation Resistance
V
IO
=500 V,
T
A
=25
°
C ................................
≥
10
12
Ω
V
IO
=500 V,
T
A
=100
°
C ..............................
≥
10
11
Ω
Storage Temperature .................... –55
°
C to +150
°
C
Operating Temperature................. –55
°
C to +100
°
C
Junction Temperature .....................................100
°
C
Lead Soldering Time at 260
°
C......................10 sec.
V
DE
Electrical Characteristics
T
A
=25
°
C
Symbol Typ. Unit Condition
Emitter
Forward Voltage
V
F
1.25
(
≤
1.65)
V
I
F
=60mA
Reverse Current
I
R
0.01 (
≤
10)
µ
A
V
R
=6.0 V
Capacitance
C
O
25 pF
V
R
=0 V
f=1.0 MHz
Detector
Breakdown Voltage BV
CEO
90 (
≥
70) V
I
C
=10 mA
I
E
=10
µ
A
BV
CEO
7.0 (
≥
6.0)
Collector-Emitter Dark
Current
I
CEO
2.0 (
≤
50) nA
V
CE
=10 V
Capacitance
C
CE
7.0 pF
V
CE
=5.0 V
f=1.0 MHz
Package
Collector-Emitter Saturation
Voltage
V
CEsat
0.25
(
≤
0.40)
V
I
F
=10 mA
I
C
=2.5 mA
Coupling Capacitance
C
C
0.35 pF —
8
7
6
5
Emitter
Collector
Emitter
Collector
Anode
Cathode
Anode
Cathode
1
2
3
4
pin one ID
.255 (6.48)
.268 (6.81)
.379 (9.63)
.390 (9.91)
.030 (0.76)
.045 (1.14)
4° typ.
.100 (2.54) typ.
10°
3°–9°
.300 (7.62)
typ.
.018 (.46)
.022 (.56) .008 (.20)
.012 (.30)
.110 (2.79)
.130 (3.30)
.130 (3.30)
.150 (3.81)
.020 (.51 )
.035 (.89 )
.230(5.84)
.250(6.35)
4321
.031 (0.79)
.050 (1.27)
5678
Dimensions in inches (mm)
ILD610
Dual Phototransistor
Optocoupler
2001 Infineon Technologies Corp. • Optoelectronics Division • San Jose, CA ILD610
www.infineon.com/opto • 1-888-Infineon (1-888-463-4636)
2–191 March 1, 2000-08
CTR will match within a ratio of 1.7:1
Switching Characteristics
Linear Operation (without saturation)
I
F
=10 mA,
V
CC
=5.0 V, R
L
=75
Ω
, Typical
Switching Operation
(with saturation)
V
CC
=5.0 V, R
L
=1.0 K
Ω
, Typical
-1 -2 -3 -4
CTR
1
,
I
F
=10 mA,
V
CE
=5.0 V 40-80 63-125 100-200 160-320 %
CTR
1
,
I
F
=1.0 mA,
V
CE
=5.0 V 13 min. 22 min. 34 min. 56 min. %
I
CEO
(
V
CE
=10 V) 2.0 (
≤
50) 2.0 (
≤
50) 5.0 (
≤
100) 5.0 (
≤
100) nA
-1 -2 -3 -4
Turn on time
t
on
3.0 3.2 3.6 4.1
µ
s
Rise time
t
r
2.0 2.5 2.9 3.3
µ
s
Turn off time
t
off
2.3 2.9 3.4 3.7
µ
s
Fall time
t
f
2.0 2.6 3.1 3.5
µ
s
-1
I
F
= 20 mA
-2
I
F
= 10 mA
-3
IF = 10 mA
-4
IF = 5.0 mA
Turn on time ton 3.0 4.3 4.6 6.0 µs
Rise time tr2.0 2.8 3.3 4.6 µs
Turn off time toff 18 2.9 3.4 25 µs
Fall time tf11 2.6 3.1 15 µs
Figure 1. Forward voltage versus forward current
Figure 2. Normalized non-saturated and saturated
CTR at TA=25°C versus LED current
100101.1
0.7
0.8
0.9
1.0
1.1
1.2
1.3
1.4
IF - Forward Current - mA
VF - Forward Voltage - V
Ta = -55°C
Ta = 25°C
Ta = 85°C
NCTR - Normalized CTR
.1 1 10 100
1.5
1.0
0.5
0.0
IF - LED Current - mA
NCTR(SAT)
NCTR
Normalized to:
VCE = 5 V, IF = 10 mA
TA = 25°C
CTRce(sat) VCE = 0.4 V
Figure 3. Normalized non-saturated and saturated
CTR at TA=50°C versus LED current
Figure 4. Normalized non-saturated and saturated
CTR at TA=70°C versus LED current
NCTR - Normalized CTR
.1 1 10 100
1.5
1.0
0.5
0.0
IF - LED Current - mA
TA = 50°C
NCTR(SAT)
NCTR
Normalized to:
VCE = 5 V, IF = 10 mA, TA = 25°C
CTRce(sat) VCE = 0.4 V
NCTR - Normalized CTR
.1 1 10 100
1.5
1.0
0.5
0.0
IF - LED Current - mA
NCTR(SAT)
NCTR
TA = 70°C
Normalized to:
VCE = 5 V, IF = 10 mA
TA = 25°C
CTRce(sat) VCE = 0.4 V
2001 Infineon Technologies Corp. • Optoelectronics Division • San Jose, CA ILD610
www.infineon.com/opto • 1-888-Infineon (1-888-463-4636)
2–192 March 1, 2000-08
Figure 9. Switching timing
Figure 10. Non-saturated switching schematic
Figure 11. Saturated switching time test waveform
IF
tR
VO
tD
tStF
tPHL
tPLH
VTH=1.5 V
VO
VCC=5 V
RL
F=10 KHz
DF=50%
IF=10 mA
Output
0
10%
50%
90% 90%
50%
10%
ton toff
tpdof
tpdon
tdtr
ts
tr
Input
0
Figure 5. Normalized non-saturated and saturated CTR
at TA=85°C versus LED current
Figure 6. Collector-emitter current versus temperature
and LED current
Figure 7. Collector-emitter leakage current versus
temperature
Figure 8. Propagation delay versus collector load resistor
NCTR - Normalized CTR
.1 1 10 100
1.5
1.0
0.5
0.0
IF - LED Current - mA
TA = 85°C
NCTR(SAT)
NCTR
Normalized to:
VCE = 10 V, IF = 10 mA, TA = 25°C
CTRce(sat) VCE = 0.4 V
6050403020100
0
5
10
15
20
25
30
35
50°C
70°C
85°C
IF - LED Current - mA
Ice - Collector Current - mA
25°C
-20 0 20 40 60 80 100
105
104
103
102
101
100
10-1
10-2
TA - Ambient Temperature - °C
ICEO - Collector-Emitter - nA
Typical
VCE = 10 V
100101.1
1
10
100
1000
1.0
1.5
2.0
2.5
RL - Collector Load Resistor - KΩ
tpLH - Propagation Delay - µs
tpHL - Propagation Delay - µs
tpLH
tpHL
Ta = 2 5 °C, IF = 10mA
Vcc = 5 V, Vth = 1 .5 V
