BAS521,115 - NXP - Product.Live

1. Product profile

1.1 General description

Single high-voltage switching diode, fabricated in planar technology, and encapsulated in

a SOD523 (SC-79) ultra small Surface-Mounted Device (SMD) plastic package.

1.2 Features and benefits

High switching speed: trr ≤50 ns

High reverse voltage: VR≤300 V

Repetitive peak forward current: IFRM ≤1A

Ultra small SMD plastic package

AEC-Q101 qualified

1.3 Applications

High-speed switching

High-voltage switching

1.4 Quick reference data

[1] Tsp is the solder point temperature at the soldering point of the cathode tab.

[2] When switched from IF= 30 mA to IR=30mA; R

L= 100 Ω; measured at IR=3mA.

BAS521

Single high-voltage switching diode

Rev. 2 — 5 November 2010 Product data sheet

Table 1. Quick reference data

Symbol Parameter Conditions Min Typ Max Unit

IFforward current Tsp ≤90 °C[1] --250mA

VRreverse voltage - - 300 V

trr reverse recovery time [2] -1650ns

Product data sheet Rev. 2 — 5 November 2010 2 of 11

NXP Semiconductors BAS521

Single high-voltage switching diode

2. Pinning information

[1] The marking bar indicates the cathode.

3. Ordering information

4. Marking

5. Limiting values

[1] Tsp is the solder point temperature at the soldering point of the cathode tab.

[2] Tj=25°C prior to surge.

[3] Reflow soldering is the only recommended soldering method.

Table 2. Pinning

Pin Description Simplified outline Graphic symbol

1 cathode [1]

2 anode 21

006aab04

Table 3. Ordering i nformation

Type number Package

Name Description Version

BAS521 SC-79 plastic surface-mounted package; 2 leads SOD523

Table 4. Marking codes

Type number Marking code

BAS521 L4

Table 5. Limiting values

In accordance with the Absolute Maximum Rating System (IEC 60134).

Symbol Parameter Conditions Min Max Unit

VRreverse voltage - 300 V

VRRM repetitive peak reverse

voltage -300V

IFforward current Tsp ≤90 °C[1] 250 mA

IFRM repetitive peak forward

current tp=1ms;

δ=0.25 -1A

IFSM non-repetitive peak forward

current square wave;

tp=1μs[2] -4.5A

Ptot total power dissipation Tsp ≤90 °C[1][3] -500mW

Tjjunction temperature - 150 °C

Tamb ambient temperature −65 +150 °C

Tstg storage temperature −65 +150 °C

Product data sheet Rev. 2 — 5 November 2010 3 of 11

NXP Semiconductors BAS521

Single high-voltage switching diode

6. Thermal characteristics

[1] Device mounted on an FR4 PCB, single-sided copper, tin-plated and standard footprint.

[2] Reflow soldering is the only recommended soldering method.

[3] Soldering point of cathode tab.

7. Characteristics

[1] Pulse test: tp= 300 μs; δ=0.02.

[2] When switched from IF= 30 mA to IR=30mA; R

L= 100 Ω; measured at IR=3mA.

Table 6. Thermal characteristics

Symbol Parameter Conditions Min Typ Max Unit

Rth(j-a) thermal resistance from

junction to ambient in free air [1][2] - - 500 K/W

Rth(j-sp) thermal resistance from

junction to solder point [3] - - 120 K/W

Table 7. Characteristics

Tamb =25

C unless otherwise specified.

Symbol Parameter Conditions Min Typ Max Unit

VBR breakdown voltage IR= 100 μA 300 340 - V

VFforward voltage IF=100mA [1] - 0.95 1.1 V

IRreverse current VR= 250 V - 30 150 nA

VR=250V;

Tamb =150°C- 40 100 μA

Cddiode capacitance f = 1 MHz; VR= 0 V - 0.4 5 pF

trr reverse recovery time [2] - 1650ns

Product data sheet Rev. 2 — 5 November 2010 4 of 11

NXP Semiconductors BAS521

Single high-voltage switching diode

(1) Tamb = 150 °C

(2) Tamb =75°C

(3) Tamb =25°C

VR=V

Rmax

Fig 1. Forward current as a function of forward

voltage; typical values Fig 2. Re verse current as a function of junction

temperature; typical value s

f=1MHz; T

amb =25°C

Fig 3. Forward current as a function of ambient

temperature; derating curve Fig 4. Dio de ca pacitance as a function of reverse

voltage; typical values

0 0.5 1 1.5

(mA)

VF (V)

500

400

300

200

100

mhc618

(2)(1) (3)

2000 40 80 120

(μA)

160

Tj (°C)

102

10−1

10−2

mhc619

300

200

100

50 100 200

Tamb (°C)

150

(mA)

mhc620

01020 40

0.42

0.3

0.34

0.38

(pF)

VR (V)

mhc621

Product data sheet Rev. 2 — 5 November 2010 5 of 11

NXP Semiconductors BAS521

Single high-voltage switching diode

8. Test information

8.1 Quality information

This product has been qualified in accordance with the Automotive Electronics Council

(AEC) standard Q101 - Stress test qualification for discrete semiconductors, and is

suitable for use in auto motive applications.

Based on square wave currents.

Tj=25°C prior to surge.

Fig 5. No n-repetitive peak forward current as a function of pulse duration; maximum values

mbg703

102

IFSM

(A)

10−1

tp (μs)

110

103

10 102

(1) IR=3mA

Fig 6. Re verse recovery time test circuit and waveforms

trr

(1)

+ I

output signal

10 %

90 %

input signal

V = V

= 50 ΩI

D.U.T.

= 50 Ω

SAMPLING

OSCILLOSCOPE

mga881

Product data sheet Rev. 2 — 5 November 2010 6 of 11

NXP Semiconductors BAS521

Single high-voltage switching diode

9. Package outline

10. Packing information

[1] For further information and the availability of packing methods, see Section 14.

Fig 7. Package outline SOD523 (SC-79)

02-12-13Dimensions in mm

1.65

1.55

1.25

1.15

0.17

0.11

0.34

0.26

0.65

0.58

0.85

0.75

Table 8. Packing methods

The indicated -xxx are the last thre e digits of the 12NC ordering code.[1]

Type number Package Description Packing quan tity

3000 8000 10000

BAS521 SOD523 2 mm pitch, 8 mm tape and reel - -315 -

4 mm pitch, 8 mm tape and reel -115 - -

---135

Product data sheet Rev. 2 — 5 November 2010 7 of 11

NXP Semiconductors BAS521

Single high-voltage switching diode

11. Soldering

Reflow soldering is the only recommended soldering method.

Fig 8. Reflow soldering footprint SOD523 (SC-79)

solder lands

solder resist

occupied area

solder paste

Dimensions in mm

0.6

(2×)

0.5

(2×)

2.15

1.1

0.7

(2×)

0.8

(2×)

1.2

sod523_

Product data sheet Rev. 2 — 5 November 2010 8 of 11

NXP Semiconductors BAS521

Single high-voltage switching diode

12. Revision history

Table 9. Revision history

Document ID Release date Data sheet status Change notice Supersedes

BAS521 v.2 20101105 Product data sheet - BAS521_1

Modifications: •Section 1.2 “Features and benefits”: amended

•Section 8 “Test information”: added

•Figure 7: superseded by minimized package outline drawing

•Section 10 “Packing information”: added

•Section 11 “Soldering”: added

•Section 13 “Legal information”: updated

BAS521_1 20030812 Product data sheet - -

Product data sheet Rev. 2 — 5 November 2010 9 of 11

NXP Semiconductors BAS521

Single high-voltage switching diode

13. Legal information

13.1 Data sheet status

[1] Please consult the most recently issued document before initiating or completing a design.

[2] The term ‘short data sheet’ is explained in section “Definitions”.

[3] The product status of de vice(s) descr ibed in th is document m ay have cha nged since thi s document w as publish ed and may di ffe r in case of multiple devices. The latest product status

information is available on the Internet at URL http://www.nxp.com.

13.2 Definitions

Draft — The document is a draft version only. The content is still under

internal review and subject to formal approval, which may result in

modifications or additions. NXP Semiconductors does not give any

representations or warranties as to the accuracy or completeness of

information included herein and shall have no liab ility for the consequences of

use of such information.

Short data sheet — A short data sheet is an extract from a full data sheet

with the same product type number(s) and tit le. A short data sh eet is intended

for quick reference only and shou ld not b e relied u pon to cont ain det ailed and

full information. For detailed and full information see the relevant full data

sheet, which is available on request via the local NXP Semicond uctors sales

office. In case of any inconsistency or conflict with the short data sheet, the

full data sheet shall pre va il.

Product specificat ion — The information and data provided in a Product

data sheet shall define the specification of the product as agreed between

NXP Semiconductors and its customer, unless NXP Semiconductors and

customer have explicitly agreed otherwise in writing. In no event however,

shall an agreement be valid in which the NXP Semiconductors product is

deemed to off er functions and qualities beyond those described in the

Product data sheet.

13.3 Disclaimers

Limited warr a nty and liability — Information in this document is believed to

be accurate and reliable. However, NXP Semiconductors does not give any

representations or warrant ies, expressed or implied, as to the accuracy or

completeness of such information and shall have no liability for the

consequences of use of such information.

In no event shall NXP Semiconductors be liable for any indirect, incidental,

punitive, special or consequ ential damages (including - wit hout limitation - lost

profits, lost savings, business interruption, costs related to the removal or

replacement of any products or rework charges) whether or not such

damages are based on tort (including negligence), warranty, breach of

contract or any other legal theory.

Notwithstanding any damages that customer might incur for any reason

whatsoever, NXP Semiconductors’ aggregate and cumulative liability t owards

customer for the products described herein shall be limited in accordance

with the Terms and conditions of commercial sale of NXP Semiconductors.

Right to make changes — NXP Semiconductors reserves the right to make

changes to information published in this document, including without

limitation specifications and product descriptions, at any time and without

notice. This document supersedes and replaces all informa tion supplied prior

to the publication hereof .

Suitability for use — NXP Semiconductors products are not designed,

authorized or warranted to be suit able for use in life support, life-critical or

safety-critical systems or equipment, nor in applications where failure or

malfunction of an NXP Semiconductors product can reasonably be expected

to result in perso nal injury, death or severe property or environmental

damage. NXP Semiconductors accepts no liab ility for inclusion and/or use of

NXP Semiconductors products in such equipment or applications and

therefore such inclusion and/or use is at the customer’s own risk.

Applications — Applications that are described herein for any of these

products are for illustrative purposes only. NXP Semiconductors makes no

representation or warranty that such applications will be suitable for the

specified use without further testing or modification.

Customers are responsible for the design and ope ration of their applications

and products using NXP Semiconductors product s, and NXP Semiconductors

accepts no liability for any assistance with applications or cu stomer product

design. It is customer’s sole responsibility to determine whether the NXP

Semiconductors product is suit able and fit for the custome r’s applications and

products planned, as well as fo r the planned application and use of

customer’s third party customer(s). Custo mers should provide appropriate

design and operating safeguards to minimize the risks associated with their

applications and products.

NXP Semiconductors does not accept any liability related to any default,

damage, costs or problem which is based on any weakness or default in the

customer’s applications or products, or the application or use by custo m er’s

third party custo m er(s). Customer is responsible for doing all necessary

testing for the customer’s applications and products using NXP

Semiconductors products in order to avoid a default of the applications and

the products or of the application or use by customer’s third party

customer(s). NXP does not accept any liability in this respect.

Limiting values — Stress above one or more limiting values (as defined in

the Absolute Maximum Ratings System of IEC 60134) will cause permanent

damage to the device. Limiting values are stress ratings only and (proper)

operation of the device at these or any other conditions above those given in

the Recommended operating conditions section (if present) or the

Characteristics sections of this document is not warranted. Constant or

repeated exposure to limiting values will permanently and irreversibly affect

the quality and reliability of the device.

Te rms and conditions of commercial sale — NXP Semiconductors

products are sold subject to the general terms and conditions of commercial

sale, as published at http://www.nxp.com/profile/terms, unless otherwise

agreed in a valid written individua l agreement. In case an individual

agreement is concluded only the ter m s and conditions of the respective

agreement shall apply. NXP Semiconductors hereby expressly ob jects to

applying the customer’s general terms and conditions with regard to the

purchase of NXP Semiconductors products by customer.

No offer to sell or license — Nothing i n this document may be interpreted or

construed as an of fer t o sell product s that is open for accept ance or the gr ant,

conveyance or implication of any license under any copyrights, patents or

other industrial or inte llectual property rights.

Export control — This document as well as the item(s) described herein

may be subject to export control regulatio ns. Export might require a prior

authorization from national authorities.

Document status[1][2] Product status[3] Definition

Objective [short] data sheet Development This document contain s data from the objective specification for product development.

Preliminary [short] dat a sheet Qualification This document contains data from the preliminary specification.

Product [short] data sheet Production This document contains the product specification.

Product data sheet Rev. 2 — 5 November 2010 10 of 11

NXP Semiconductors BAS521

Single high-voltage switching diode

Quick reference data — The Quick reference data is an extract of the

product data given in the Limiting values and Characteristics sections of this

document, and as such is not complete, exhaustive or legally binding.

13.4 Trademarks

Notice: All referenced b rands, produc t names, service names and trademarks

are the property of their respective ow ners.

14. Contact information

For more information, please visit: http://www.nxp.com

For sales office addresses, please send an email to: salesaddresses@nxp.com

NXP Semiconductors BAS521

Single high-voltage switching diode

For more information, please visit: http://www.nxp.com

For sales office addresses, please send an email to: salesaddresses@nxp.com

Date of release: 5 November 2010

Document identifi er: BAS521

Please be aware that important notices concerning this document and the product(s)

described herein, have been included in section ‘Legal information’.

15. Contents

1 Product profile. . . . . . . . . . . . . . . . . . . . . . . . . . 1

1.1 General description . . . . . . . . . . . . . . . . . . . . . 1

1.2 Features and benefits. . . . . . . . . . . . . . . . . . . . 1

1.3 Applications . . . . . . . . . . . . . . . . . . . . . . . . . . . 1

1.4 Quick reference data . . . . . . . . . . . . . . . . . . . . 1

2 Pinning information. . . . . . . . . . . . . . . . . . . . . . 2

3 Ordering information. . . . . . . . . . . . . . . . . . . . . 2

4 Marking. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2

5 Limiting values. . . . . . . . . . . . . . . . . . . . . . . . . . 2

6 Thermal characteristics . . . . . . . . . . . . . . . . . . 3

7 Characteristics. . . . . . . . . . . . . . . . . . . . . . . . . . 3

8 Test information. . . . . . . . . . . . . . . . . . . . . . . . . 5

8.1 Quality information . . . . . . . . . . . . . . . . . . . . . . 5

9 Package outline . . . . . . . . . . . . . . . . . . . . . . . . . 6

10 Packing information . . . . . . . . . . . . . . . . . . . . . 6

11 Soldering . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7

12 Revision history. . . . . . . . . . . . . . . . . . . . . . . . . 8

13 Legal information. . . . . . . . . . . . . . . . . . . . . . . . 9

13.1 Data sheet status . . . . . . . . . . . . . . . . . . . . . . . 9

13.2 Definitions. . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9

13.3 Disclaimers. . . . . . . . . . . . . . . . . . . . . . . . . . . . 9

13.4 Trademarks. . . . . . . . . . . . . . . . . . . . . . . . . . . 10

14 Contact information. . . . . . . . . . . . . . . . . . . . . 10

15 Contents . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11