2SA1012
PNP SILICON TRANSISTOR
UNISONIC TECHNOLOGIES CO., LTD 2 of 4
www.unisonic.com.tw QW-R203-015,I
ABSOLUTE MAXIMUM RATINGS (TA = 25°C)
PARAMETER SYMBOL RATINGS UNIT
Collector-Base Voltage VCBO -60 V
Collector-Emitter Voltage VCEO -50 V
Collector-Emitter Voltage VEBO -5 V
Peak Collector Current IC -5 A
Power Dissipation PD 25 W
Junction Temperature TJ 150 °C
Storage Temperature TSTG -55 ~ +150 °C
Note Absolute maximum ratings are those values beyond which the device could be permanently damaged.
Absolute maximum ratings are stress ratings only and functional device operation is not implied.
ELECTRICAL CHARACTERISTICS (TA = 25°C, unless otherwise specified.)
PARAMETER SYMBOL TEST CONDITIONS MIN TYP MAX UNIT
Collector-Base Breakdown Voltage BVCBO I
C=-100μA, IE=0 -60 V
Collector-Emitter Breakdown Voltage BVCEO I
C=-10mA, IB=0 -50 V
Emitter-Base Breakdown Voltage BVEBO I
E=-100μA, IC=0 -5 V
Collector Cut-off Current ICBO V
CB=-50V, IE=0 -1.0 μA
Emitter Cut-off Current IEBO V
EB=-5V, IC=0 -1.0 μA
DC Current Gain hFE1 V
CE=-1V, IC=-1A 70 360
hFE2 V
CE=-1V, IC=-3A 30
Collector-Emitter Saturation Voltage VCE
SAT
IC=-3A, IB=-0.15A -0.2 -0.4 V
Base-Emitter Saturation Voltage VBE
SAT
IC=-3A, IB=-0.15A -0.9 -1.2 V
Transition frequency fT V
CE=-4V, IC=-1A 60 MHz
Collector output capacitance Cob VCB=-10V, IE=0, f=1MHz 170 pF
Switching time
Turn-on time tON 0.1 μs
Storage time tS 1.0 μs
Fall time tF 0.1 μs
CLASSIFICATION of hFE1
RANK O Y R R1
RANGE 70 ~ 140 120 ~ 240 180 ~ 360 >255