AUIRFP4409
HEXFET® Power MOSFET
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Gate Drain Source
Features
Advanced Process Technology
Low On-Resistance
175°C Operating Temperature
Fast Switching
Repetitive Avalanche Allowed up to Tjmax
Lead-Free, RoHS Compliant
Automotive Qualified *
Description
Specifically designed for Automotive applications, this HEXFET®
Power MOSFETs utilizes the latest processing techniques to
achieve low on-resistance per silicon area. This benefit com-
bined with the fast switching speed and ruggedized device de-
sign that HEXFET power MOSFETs are well known for, provides
the designer with an extremely efficient and reliable device for
use in Automotive and a wide variety of other applications.
Base part number Package Type Standard Pack
Form Quantity
AUIRFP4409 TO-247AC Tube 25 AUIRFP4409
Orderable Part Number
VDSS 300V
RDS(on) typ. 56m
max 69m
ID 38A
Parameter Max. Units
ID @ TC = 25°C Continuous Drain Current, VGS @ 10V 38
A
ID @ TC = 100°C Continuous Drain Current, VGS @ 10V 27
IDM Pulsed Drain Current 152
PD @TC = 25°C Maximum Power Dissipation 341 W
Linear Derating Factor 2.3 W/°C
VGS Gate-to-Source Voltage ± 20 V
EAS (Thermally limited) Single Pulse Avalanche Energy 541 mJ
TJ
TSTG
Operating Junction and
Storage Temperature Range -55 to + 175
°C
Soldering Temperature, for 10 seconds
(1.6mm from case) 300
Mounting Torque, 6-32 or M3 Screw 10 lbf·in (1.1 N·m)
Thermal Resistance
Parameter Typ. Max. Units
RJC Junction-to-Case ––– 0.44
°C/W
RCS Case-to-Sink, Flat Greased Surface 0.24 –––
RJA Junction-to-Ambient ––– 40
AUTOMOTIVE GRADE
Absolute Maximum Ratings
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These
are stress ratings only; and functional operation of the device at these or any other condition beyond those indicated in
the specifications is not implied.Exposure to absolute-maximum-rated conditions for extended periods may affect device
reliability. The thermal resistance and power dissipation ratings are measured under board mounted and still air condi-
tions. Ambient temperature (TA) is 25°C, unless otherwise specified.
TO-247AC
AUIRFP4409
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D
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1 2017-09-21
HEXFET® is a registered trademark of Infineon.
*Qualification standards can be found at www.infineon.com