NOTES : 1.Measured at 1.0MHz and applied reverse voltage of 4.0V DC.
2.Thermal Resistance Junction to Ambient.
V
RMS
V
DC
V
RRM
I
(AV)
I
FSM
V
F
@TA
=
90 C
1N5817 thru 1N5819
FEATURES
Metal-Semiconductor junction with guard ring
Epitaxial construction
Low forward voltage drop
High current capability
The plastic material carries UL recognition 94V-0
For use in low voltage,high frequency inverters,free
wheeling,and polarity protection applications
MECHANICAL DATA
Case : JEDEC DO-41 molded plastic
Polarity : Color band denotes cathode
Weight : 0.012 ounces, 0.34 grams
Mounting position : Any
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Ratings at 25 ambient temperature unless otherwise specified.℃
1N5818
30
21
30
1N5817
20
14
20
1N5819
40
28
40
Maximum Average Forward
Rectified Current
Peak Forward Surge Current
8.3ms single half sine-wave
super imposed on rated load (JEDEC Method)
Maximum Recurrent Peak Reverse Voltage
Maximum RMS Voltage
Maximum DC Blocking Voltage
Maximum forward Voltage at 1.0A DC
1.0
25
0.450
T
J
Operating Temperature Range
-55 to +125
C
T
STG
Storage Temperature Range
-55 to +150
C
Typical Thermal Resistance (Note 2)
R
0JA
80
C/W
C
J
Typical Junction Capacitance (Note 1)
110
pF
I
R
@T
J
=100 C
Maximum DC Reverse Current
at Rated DC Blocking Voltage
@T
J
=25 C 0.1
10
mA
mA
V
A
A
V
UNIT
V
V
All Dimensions in millimeter
Max.
Min.
DO-41
Dim.
A
D
C
B
25.4
5.20
-
4.10
0.71
2.00 2.70
0.86
DO-41
A
C
D
A
B
CHARACTERISTICS SYMBOL
Maximum forward Voltage at 3.0A DC
V
F
0.550 0.600
0.900
0.875
0.750
V
SCHOTTKY BARRIER RECTIFIERS REVERSE VOLTAGE - 20 to 40 Volts
FORWARD CURRENT - 1.0 Ampere
SEMICONDUCTOR
LITE-ON
REV. 4, Aug-2011, KDHC01
0.25
10