Supertex inc. VN2222LL N-Channel Enhancement-Mode Vertical DMOS FET Features General Description Free from secondary breakdown Low power drive requirement Ease of paralleling Low CISS and fast switching speeds Excellent thermal stability Integral source-drain diode High input impedance and high gain This enhancement-mode (normally-off) transistor utilizes a vertical DMOS structure and Supertex's well-proven, silicon-gate manufacturing process. This combination produces a device with the power handling capabilities of bipolar transistors and the high input impedance and positive temperature coefficient inherent in MOS devices. Characteristic of all MOS structures, this device is free from thermal runaway and thermally-induced secondary breakdown. Applications Motor controls Converters Amplifiers Switches Power supply circuits Drivers (relays, hammers, solenoids, lamps, memories, displays, bipolar transistors, etc.) Ordering Information Product Summary Part Number Package Option Packing VN2222LL-G VN2222LL-G P002 TO-92 1000/Bag TO-92 2000/Reel VN2222LL-G P003 VN2222LL-G P005 Supertex's vertical DMOS FETs are ideally suited to a wide range of switching and amplifying applications where very low threshold voltage, high breakdown voltage, high input impedance, low input capacitance, and fast switching speeds are desired. RDS(ON) BVDSS/BVDGS 60V ID(ON) (max) (min) 7.5 750mA Pin Configuration VN2222LL-G P013 VN2222LL-G P014 -G denotes a lead (Pb)-free / RoHS compliant package. Contact factory for Wafer / Die availablity. Devices in Wafer / Die form are lead (Pb)-free / RoHS compliant. DRAIN SOURCE Absolute Maximum Ratings Parameter Value Drain-to-source voltage BVDSS Drain-to-gate voltage BVDGS Gate-to-source voltage 30V Operating and storage temperature -55OC to +150OC Absolute Maximum Ratings are those values beyond which damage to the device may occur. Functional operation under these conditions is not implied. Continuous operation of the device at the absolute rating level may affect device reliability. All voltages are referenced to device ground. Typical Thermal Resistance Package ja TO-92 132OC/W Doc.# DSFP-VN2222LL B082013 GATE TO-92 Product Marking Si VN 2222L LY Y W W YY = Year Sealed WW = Week Sealed = "Green" Packaging Package may or may not include the following marks: Si or TO-92 Supertex inc. www.supertex.com VN2222LL Thermal Characteristics Package TO-92 (continuous) ID (pulsed) ID Power Dissipation @TC = 25OC IDR IDRM 230mA 1.0A 1.0W 230mA 1.0A Notes: ID (continuous) is limited by max rated Tj . Electrical Characteristics (T = 25C unless otherwise specified) A Sym Parameter BVDSS VGS(th) IGSS Min Typ Max Units Drain-to-source breakdown voltage 60 - - V VGS = 0V, ID = 100A Gate threshold voltage 0.6 - 2.5 V VGS = VDS, ID = 1.0mA - - 100 nA VGS = 20V, VDS = 0V - - 10 - - 500 0.75 - - - - 7.5 - - 7.5 100 - - Gate body leakage current IDSS Zero gate voltage drain current ID(ON) On-state drain current RDS(ON) Static drain-to-source on-state resistance GFS Forward transconductance CISS Input capacitance - - 60 COSS Common source output capacitance - - 25 CRSS Reverse transfer capacitance - - 8.0 t(ON) Turn-on time - - 10 t(OFF) Turn-off time - - 10 VSD Diode forward voltage drop - 0.85 - A A mmho Conditions VGS = 0V, VDS = Max Rating VGS = 0V, VDS = 48V, TA = 125OC VGS = 10V, VDS = 10V VGS = 5.0V, ID = 200mA VGS = 10V, ID = 500mA VDS = 10V, ID = 500mA pF VGS = 0V, VDS = 25V, f = 1.0MHz ns VDD = 15V, ID = 0.6A, RGEN = 25 V VGS = 0V, ISD = 0.2A Notes: 1. All D.C. parameters 100% tested at 25OC unless otherwise stated. (Pulse test: 300s pulse, 2% duty cycle.) 2. All A.C. parameters sample tested. Switching Waveforms and Test Circuit 10V INPUT 0V Pulse Generator 10% t(ON) td(ON) VDD OUTPUT 0V Doc.# DSFP-VN2222LL B082013 VDD 90% t(OFF) tr td(OFF) OUTPUT RGEN tf 10% 10% 90% RL INPUT D.U.T. 90% 2 Supertex inc. www.supertex.com VN2222LL 3-Lead TO-92 Package Outline (LL) D A Seating Plane 1 2 3 L c b e1 e Side View Front View E1 E 1 3 2 Bottom View Symbol Dimensions (inches) A b c MIN .170 .014 NOM - - MAX .210 .022 .014 D E E1 e e1 L .175 .125 .080 .095 .045 .500 - - - - - - .205 .165 .105 .105 .055 .610* .022 JEDEC Registration TO-92. * This dimension is not specified in the JEDEC drawing. This dimension differs from the JEDEC drawing. Drawings not to scale. Supertex Doc.#: DSPD-3TO92N3, Version E041009. (The package drawing(s) in this data sheet may not reflect the most current specifications. For the latest package outline information go to http://www.supertex.com/packaging.html.) Supertex inc. does not recommend the use of its products in life support applications, and will not knowingly sell them for use in such applications unless it receives an adequate "product liability indemnification insurance agreement." Supertex inc. does not assume responsibility for use of devices described, and limits its liability to the replacement of the devices determined defective due to workmanship. No responsibility is assumed for possible omissions and inaccuracies. Circuitry and specifications are subject to change without notice. For the latest product specifications refer to the Supertex inc. (website: http//www.supertex.com) Supertex inc. (c)2013 Supertex inc. All rights reserved. Unauthorized use or reproduction is prohibited. Doc.# DSFP-VN2222LL B082013 3 1235 Bordeaux Drive, Sunnyvale, CA 94089 Tel: 408-222-8888 www.supertex.com Mouser Electronics Authorized Distributor Click to View Pricing, Inventory, Delivery & Lifecycle Information: Microchip: VN2222LL-G P003 VN2222LL-G P002 VN2222LL-G P013 VN2222LL-G P005 VN2222LL-G P014 VN2222LL-GP003 VN2222LL VN2222LL-P002 VN2222LL-P003-G VN2222LL-G VN2222LL-P003 VN2222LL-P013 VN2222LLP014 VN2222LL-P013-G VN2222LL-G-P013