Supertex inc.
Supertex inc.
www.supertex.com
Doc.# DSFP-VN2222LL
B082013
VN2222LL
YY = Year Sealed
WW = Week Sealed
= “Green” Packaging
Si VN
2222L
LYYWW
Features
Free from secondary breakdown
Low power drive requirement
Ease of paralleling
Low CISS and fast switching speeds
Excellent thermal stability
Integral source-drain diode
High input impedance and high gain
Applications
Motor controls
Converters
Ampliers
Switches
Power supply circuits
Drivers (relays, hammers, solenoids, lamps, memories,
displays, bipolar transistors, etc.)
General Description
This enhancement-mode (normally-off) transistor utilizes
a vertical DMOS structure and Supertex’s well-proven,
silicon-gate manufacturing process. This combination
produces a device with the power handling capabilities
of bipolar transistors and the high input impedance and
positive temperature coefcient inherent in MOS devices.
Characteristic of all MOS structures, this device is free
from thermal runaway and thermally-induced secondary
breakdown.
Supertex’s vertical DMOS FETs are ideally suited to a
wide range of switching and amplifying applications where
very low threshold voltage, high breakdown voltage, high
input impedance, low input capacitance, and fast switching
speeds are desired.
N-Channel Enhancement-Mode
Vertical DMOS FET
Absolute Maximum Ratings
Parameter Value
Drain-to-source voltage BVDSS
Drain-to-gate voltage BVDGS
Gate-to-source voltage ±30V
Operating and storage temperature -55OC to +150OC
Absolute Maximum Ratings are those values beyond which damage to the device may
occur. Functional operation under these conditions is not implied. Continuous operation
of the device at the absolute rating level may affect device reliability. All voltages are
referenced to device ground.
TO-92
Product Marking
Package may or may not include the following marks: Si or
Pin Conguration
TO-92
GATE
SOURCE
DRAIN
Product Summary
BVDSS/BVDGS
RDS(ON)
(max)
ID(ON)
(min)
60V 7.5Ω750mA
Typical Thermal Resistance
Package θja
TO-92 132OC/W
Ordering Information
Part Number Package Option Packing
VN2222LL-G TO-92 1000/Bag
VN2222LL-G P002
TO-92 2000/Reel
VN2222LL-G P003
VN2222LL-G P005
VN2222LL-G P013
VN2222LL-G P014
-G denotes a lead (Pb)-free / RoHS compliant package.
Contact factory for Wafer / Die availablity.
Devices in Wafer / Die form are lead (Pb)-free / RoHS compliant.
2
Supertex inc.
www.supertex.com
Doc.# DSFP-VN2222LL
B082013
VN2222LL
Electrical Characteristics (TA = 25°C unless otherwise specied)
Sym Parameter Min Typ Max Units Conditions
BVDSS Drain-to-source breakdown voltage 60 - - V VGS = 0V, ID = 100µA
VGS(th) Gate threshold voltage 0.6 - 2.5 V VGS = VDS, ID = 1.0mA
IGSS Gate body leakage current - - 100 nA VGS = ±20V, VDS = 0V
IDSS Zero gate voltage drain current
- - 10
µA
VGS = 0V, VDS = Max Rating
- - 500 VGS = 0V, VDS = 48V,
TA = 125OC
ID(ON) On-state drain current 0.75 - - A VGS = 10V, VDS = 10V
RDS(ON) Static drain-to-source on-state resistance - - 7.5 ΩVGS = 5.0V, ID = 200mA
- - 7.5 VGS = 10V, ID = 500mA
GFS Forward transconductance 100 - - mmho VDS = 10V, ID = 500mA
CISS Input capacitance - - 60
pF
VGS = 0V,
VDS = 25V,
f = 1.0MHz
COSS Common source output capacitance - - 25
CRSS Reverse transfer capacitance - - 8.0
t(ON) Turn-on time - - 10 ns VDD = 15V, ID = 0.6A,
RGEN = 25Ω
t(OFF) Turn-off time - - 10
VSD Diode forward voltage drop - 0.85 - V VGS = 0V, ISD = 0.2A
Notes:
1. All D.C. parameters 100% tested at 25OC unless otherwise stated. (Pulse test: 300µs pulse, 2% duty cycle.)
2. All A.C. parameters sample tested.
Switching Waveforms and Test Circuit
90%
10%
90% 90%
10%
10%
Pulse
Generator
VDD
R
L
OUTPUT
D.U.T.
t(ON)
t
d(ON)
t
(OFF)
t
d(OFF)
t
r
INPUT
INPUT
OUTPUT
10V
VDD
RGEN
0V
0V
t
f
Notes:
† ID (continuous) is limited by max rated Tj .
Thermal Characteristics
Package ID
(continuous)
ID
(pulsed)
Power Dissipation
@TC = 25OCIDR
IDRM
TO-92 230mA 1.0A 1.0W 230mA 1.0A
Supertex inc. does not recommend the use of its products in life support applications, and will not knowingly sell them for use in such applications unless it receives
an adequate “product liability indemnification insurance agreement.” Supertex inc. does not assume responsibility for use of devices described, and limits its liability
to the replacement of the devices determined defective due to workmanship. No responsibility is assumed for possible omissions and inaccuracies. Circuitry and
specifications are subject to change without notice. For the latest product specifications refer to the Supertex inc. (website: http//www.supertex.com)
©2013 Supertex inc. All rights reserved. Unauthorized use or reproduction is prohibited. Supertex inc.
1235 Bordeaux Drive, Sunnyvale, CA 94089
Tel: 408-222-8888
www.supertex.com
3
VN2222LL
(The package drawing(s) in this data sheet may not reect the most current specications. For the latest package outline
information go to http://www.supertex.com/packaging.html.)
Doc.# DSFP-VN2222LL
B082013
3-Lead TO-92 Package Outline (LL)
Symbol A b c D E E1 e e1 L
Dimensions
(inches)
MIN .170 .014.014.175 .125 .080 .095 .045 .500
NOM - - - - - - - - -
MAX .210 .022.022.205 .165 .105 .105 .055 .610*
JEDEC Registration TO-92.
* This dimension is not specied in the JEDEC drawing.
† This dimension differs from the JEDEC drawing.
Drawings not to scale.
Supertex Doc.#: DSPD-3TO92N3, Version E041009.
Seating
Plane
1
2
3
Front View Side View
Bottom View
E1 E
D
e1
L
e
c
1 2 3
b
A
Mouser Electronics
Authorized Distributor
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VN2222LL-G P003 VN2222LL-G P002 VN2222LL-G P013 VN2222LL-G P005 VN2222LL-G P014 VN2222LL-G-
P003 VN2222LL VN2222LL-P002 VN2222LL-P003-G VN2222LL-G VN2222LL-P003 VN2222LL-P013 VN2222LL-
P014 VN2222LL-P013-G VN2222LL-G-P013