2SC5136 Silicon NPN Epitaxial ADE-208-223 1st. Edition Application VHF/UHF wide band amplifier Features * High gain bandwidth product fT = 3.8 GHz typ * High gain, low noise figure PG = 11 dB typ, NF = 2.5 dB typ at f = 900 MHz Outline SMPAK 3 1 2 1. Emitter 2. Base 3. Collector 2SC5136 Absolute Maximum Ratings (Ta = 25C) Item Symbol Ratings Unit Collector to base voltage VCBO 25 V Collector to emitter voltage VCEO 13 V Emitter to base voltage VEBO 3 V Collector current IC 50 mA Collector power dissipation PC 80 mW Junction temperature Tj 150 C Storage temperature Tstg -55 to +150 C Note: Marking is "TI-". Attention: This device is very sensitive to electro static discharge. It is recommended to adopt appropriate cautions when handling this transistor. Electrical Characteristics (Ta = 25C) Item Symbol Min Typ Max Unit Test conditions Collector to base breakdown voltage V(BR)CBO 25 -- -- V I C = 10 A, IE = 0 Collector cutoff current I CBO -- -- 100 nA VCB = 15 V, IE = 0 I CEO -- -- 10 A VCE = 13 V, RBE = Emitter cutoff current I EBO -- -- 300 nA VEB = 3 V, IC = 0 DC current transfer ratio hFE 50 100 180 Collector output capacitance Cob -- 0.85 1.3 pF VCB = 10 V, IE = 0, f = 1 MHz Gain bandwidth product fT 3.0 3.8 -- GHz VCE = 4 V, IC = 20 mA Power gain PG 7 11 -- dB VCE = 4 V, IC = 20 mA, f = 900 MHz Noise figure NF -- 2.5 4.0 dB VCE = 4 V, IC = 5 mA, f = 900 MHz 2 VCE = 4 V, IC = 20 mA 2SC5136 DC Current Transfer Ratio vs. Collector Current Maximum Collector Dissipation Curve 200 DC Current Transfer Ratio h FE Collector Power Dissipation Pc (mW) 160 160 120 120 80 40 0 Collector Output Capacitance Cob (pF) VCE = 4V 4 3 VCE = 1V 2 1 0 1 2 5 10 20 Collector Current I C (mA) 50 40 0 0.01 200 Gain Bandwidth Product vs. Collector Current 5 Gain Bandwidth Product f T (GHz) 50 100 150 Ambient Temperature Ta (C) 80 2.0 1.6 VCE = 4 V Pulse Test 0.1 1 10 Collector Current I C (mA) 100 Collector Output Capacitance vs. Collector to Base Voltage IE = 0 f = 1 MHz 1.2 0.8 0.4 0 0.1 0.2 0.5 1 2 5 10 20 Collector to Base Voltage V CB (V) 3 2SC5136 20 Power Gain vs. Collector Current 10 Noise Figure vs. Collector Current 16 12 VCE = 4V 8 VCE = 1V 4 0 0.1 0.2 4 f = 900 MHz Noise Figure NF (dB) Power Gain PG (dB) f = 900 MHz 0.5 1 2 5 10 20 Collector Current I C (mA) 50 8 6 VCE = 1V 4 2 0 0.1 0.2 VCE = 4V 0.5 1 2 5 10 20 Collector Current I C (mA) 50 2SC5136 S11 Parameter vs. Frequency .8 1 S21 Parameter vs. Frequency Scale: 5 / div. 90 1.5 .6 60 120 2 .4 3 4 5 .2 30 150 10 0.2 0 .4 .6 .8 1.0 1.5 2 3 45 10 180 0 -10 -5 -4 -.2 -.4 -30 -150 -3 -2 -.6 -.8 -1 -90 Condition: V CE = 4 V , Zo = 50 100 to 1000 MHz (100 MHz step) (I C = 5 mA) (I C = 20 mA) Condition: V CE = 4 V , Zo = 50 100 to 1000 MHz (100 MHz step) (I C = 5 mA) (I C = 20 mA) S12 Parameter vs. Frequency 90 S22 Parameter vs. Frequency Scale: 0.02 / div. .8 60 120 -60 -120 -1.5 1 .6 1.5 2 .4 3 30 150 4 5 .2 10 180 0 .2 0 .4 .6 .8 1.0 1.5 2 3 45 10 -10 -5 -4 -.2 -30 -150 -3 -.4 -60 -120 -90 Condition: V CE = 4 V , Zo = 50 100 to 1000 MHz (100 MHz step) (I C = 5 mA) (I C = 20 mA) -2 -.6 -.8 -1 -1.5 Condition: V CE = 4 V , Zo = 50 100 to 1000 MHz (100 MHz step) (I C = 5 mA) (I C = 20 mA) 5 2SC5136 S11 Parameter vs. Frequency .8 1 .6 S21 Parameter vs. Frequency 90 1.5 Scale: 5 / div. 60 120 2 .4 3 4 5 .2 30 150 10 .2 0 .4 .6 .8 1.0 1.5 2 3 45 10 180 0 -10 -5 -4 -.2 -.4 -30 -150 -3 -2 -.6 -.8 -1 -90 Condition: V CE = 1 V , Zo = 50 100 to 1000 MHz (100 MHz step) (I C = 5 mA) (I C = 20 mA) Condition: V CE = 1 V , Zo = 50 100 to 1000 MHz (100 MHz step) (I C = 5 mA) (I C = 20 mA) S12 Parameter vs. Frequency 90 S22 Parameter vs. Frequency Scale: 0.04 / div. .8 60 120 -60 -120 -1.5 1 .6 1.5 2 .4 3 30 150 4 5 .2 10 180 0 .2 0 .4 .6 .8 1.0 1.5 2 3 45 10 -10 -5 -4 -.2 -30 -150 -3 -.4 -60 -120 -90 Condition: V CE = 1 V , Zo = 50 100 to 1000 MHz (100 MHz step) (I C = 5 mA) (I C = 20 mA) 6 -2 -.6 -.8 -1 -1.5 Condition: V CE = 1 V , Zo = 50 100 to 1000 MHz (100 MHz step) (I C = 5 mA) (I C = 20 mA) Unit: mm 2.2 Max 0.6 0.6 Max 0.45 0.1 14.5 Min 1.8 Max 3.2 Max 4.2 Max 0.4 0.1 1.27 1.27 2.54 Hitachi Code JEDEC EIAJ Weight (reference value) SPAK -- -- 0.10 g Cautions 1. Hitachi neither warrants nor grants licenses of any rights of Hitachi's or any third party's patent, copyright, trademark, or other intellectual property rights for information contained in this document. Hitachi bears no responsibility for problems that may arise with third party's rights, including intellectual property rights, in connection with use of the information contained in this document. 2. Products and product specifications may be subject to change without notice. Confirm that you have received the latest product standards or specifications before final design, purchase or use. 3. Hitachi makes every attempt to ensure that its products are of high quality and reliability. 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