Features
Repetitive Avalanche Ratings
Dynamic dv/dt Rating
Hermetically Sealed
Simple Drive Requirements
ESD Rating: Class 1A per MIL-STD-750,
Method 1020
The HEXFET® technology is the key to International
Rectifier’s HiRel advanced line of power MOSFET transistors.
The efficient geometry and unique processing of this latest
“State of the Art” design achieves: very low on state
resistance combined with high trans conductance.
The HEXFET transistors also feature all of the well
established advantages of MOSFETs such as voltage
control, very fast switching and temperature stability of the
electrical parameters.
They are well suited for applications such as switching power
supplies, motor controls, inverters, choppers, audio amplifiers
and high energy pulse circuits.
Absolute Maximum Ratings
Symbol Parameter Value Units
ID1 @ VGS = 10V, TC = 25°C Continuous Drain Current 3.5
A
ID2 @ VGS = 10V, TC = 100°C Continuous Drain Current 2.25
IDM @ TC = 25°C Pulsed Drain Current 14
PD @ TC = 25°C Maximum Power Dissipation 15 W
Linear Derating Factor 0.12 W/°C
VGS Gate-to-Source Voltage ± 20 V
EAS Single Pulse Avalanche Energy 68 mJ
IAR Avalanche Current 3.5
A
EAR Repetitive Avalanche Energy 1.5 mJ
dv/dt Peak Diode Recovery dv/dt 5.5
V/ns
TJ Operating Junction and
°C
TSTG Storage Temperature Range
Lead Temperature 300 (0.063 in. /1.6 mm from case for 10s)
Weight 0.98 (Typical) g
-55 to + 150
TO-39
IRFF110
JANTX2N6782
JANTXV2N6782
1 2018-12-04
Product Summary
Part Number BVDSS RDS(on) I
D
IRFF110 100V
0.60 3.5A
REPETITIVE AVALANCHE AND dv/dt RATED
HEXFET® TRANSISTORS
THRU-HOLE TO-205AF (TO-39)
PD-90423D
Description
For Footnotes, refer to the page 2.
International Rectifier HiRel Products, Inc.
100V, N-CHANNEL
REF: MIL-PRF-19500/556
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JANTX2N6782/JANTXV2N6782
International Rectifier HiRel Products, Inc.
Thermal Resistance
Symbol Parameter Min. Typ. Max. Units
RJC Junction-to-Case ––– ––– 8.33
RJA Junction-to-Ambient (Typical Socket Mount) ––– ––– 175 °C/W
Electrical Characteristics @ Tj = 25°C (Unless Otherwise Specified)
Symbol Parameter Min. Typ. Max. Units Test Conditions
BVDSS Drain-to-Source Breakdown Voltage 100 ––– ––– V VGS = 0V, ID = 1.0mA
BVDSS/TJ Breakdown Voltage Temp. Coefficient ––– 0.10 ––– V/°C Reference to 25°C, ID = 1.0mA
RDS(on) Static Drain-to-Source On-Resistance ––– ––– 0.60 VGS = 10V, ID2 = 2.25A
––– ––– 0.61 VGS = 10V, ID1 = 3.5A
VGS(th) Gate Threshold Voltage 2.0 ––– 4.0 V VDS = VGS, ID = 250µA
Gfs Forward Transconductance 0.8 ––– ––– S VDS = 15V, ID2 = 2.25A
IDSS Zero Gate Voltage Drain Current ––– ––– 25 µA VDS = 80 V, VGS = 0V
––– ––– 250 VDS = 80V,VGS = 0V,TJ =125°C
IGSS Gate-to-Source Leakage Forward ––– ––– 100 nA VGS = 20V
Gate-to-Source Leakage Reverse ––– ––– -100 VGS = -20V
QG Total Gate Charge ––– ––– 8.1
nC
ID1 = 3.5A
QGS Gate-to-Source Charge ––– ––– 1.7 VDS = 50V
QGD Gate-to-Drain (‘Miller’) Charge ––– ––– 4.5 VGS = 10V
td(on) Turn-On Delay Time ––– ––– 15
ns
VDD = 50V
tr Rise Time ––– ––– 25 ID1 = 3.5A
td(off) Turn-Off Delay Time ––– ––– 25 RG = 7.5
tf Fall Time ––– ––– 20 VGS = 10V
Ls +LD Total Inductance ––– 7.0 ––– nH
Measured from Drain lead (6mm / 0.25 in
from package) to Source lead (6mm/ 0.25
in from package) with Source wire
internally bonded from Source pin to Drain
pin
Ciss Input Capacitance ––– 180 –––
pF
VGS = 0V
Coss Output Capacitance ––– 82 ––– VDS = 25V
Crss Reverse Transfer Capacitance ––– 15 ––– ƒ = 1.0MHz
Source-Drain Diode Ratings and Characteristics
Symbol Parameter Min. Typ. Max. Units Test Conditions
IS Continuous Source Current (Body Diode) ––– ––– 3.5
ISM Pulsed Source Current (Body Diode) ––– ––– 14
VSD Diode Forward Voltage ––– ––– 1.5 V TJ = 25°C,IS = 3.5A, VGS = 0V
trr Reverse Recovery Time ––– ––– 180 ns TJ = 25°C, IF = 3.5A, VDD ≤ 50V
Qrr Reverse Recovery Charge ––– ––– 2.0 µC di/dt = 100A/µs
ton Forward Turn-On Time Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD)
A
Footnotes:
Repetitive Rating; Pulse width limited by maximum junction temperature.
VDD = 25V, starting TJ = 25°C, Peak IL = 3.5A
ISD 3.5A, di/dt 75A/µs, VDD 100V, TJ 150°C, Suggested RG = 7.5 Ω
Pulse width 300 µs; Duty Cycle 2%
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JANTX2N6782/JANTXV2N6782
International Rectifier HiRel Products, Inc.
Fig 3. Typical Transfer Characteristics
Fig 1. Typical Output Characteristics
Fig 4. Normalized On-Resistance Vs. Temperature
Fig 2. Typical Output Characteristics
Fig 6. Typical Gate Charge Vs.
Gate-to-Source Voltage
Fig 5. Typical Capacitance Vs.
Drain-to-Source Voltage
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JANTX2N6782/JANTXV2N6782
International Rectifier HiRel Products, Inc.
Fig 8. Maximum Safe Operating Area
Fig 9. Maximum Drain Current Vs.
Case Temperature
Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Case
Fig 7. Typical Source-Drain Diode
Forward Voltage
Fig 10. Maximum Avalanche Energy
Vs. Drain Current
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JANTX2N6782/JANTXV2N6782
International Rectifier HiRel Products, Inc.
Fig 12a. Unclamped Inductive Test Circuit Fig 12b. Unclamped Inductive Waveforms
Fig 13b. Gate Charge Test Circuit
Fig 13a. Gate Charge Waveform
Fig 14b. Switching Time Waveforms
Fig 14a. Switching Time Test Circuit
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IRFF110
JANTX2N6782/JANTXV2N6782
International Rectifier HiRel Products, Inc.
Case Outline and Dimensions - TO-205AF (TO-39)
www.infineon.com/irhirel
Infineon Technologies Service Center: USA Tel: +1 (866) 951-9519 and International Tel: +49 89 234 65555
Leominster, Massachusetts 01453, USA Tel: +1 (978) 534-5776
San Jose, California 95134, USA Tel: +1 (408) 434-5000
Data and specifications subject to change without notice.
7 2018-12-04
IRFF110
JANTX2N6782/JANTXV2N6782
International Rectifier HiRel Products, Inc.
IMPORTANT NOTICE
The information given in this document shall be in no event regarded as guarantee of conditions or characteristic. The
data contained herein is a characterization of the component based on internal standards and is intended to
demonstrate and provide guidance for typical part performance. It will require further evaluation, qualification and
analysis to determine suitability in the application environment to confirm compliance to your system requirements.
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the product of Infineon Technologies in customer’s applications.
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completeness of the product information given in this document with respect to applications.
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