N-CHANNEL ENHANCEMENT MODE VERTICAL DMOS FET VN2222LL ISSUE 2 - FEB 94 s G D Tos2 ABSOLUTE MAXIMUM RATINGS. PARAMETER SYMBOL VALUE UNIT Drain-Source Voltage Vos 60 V Continuous Drain Current at T,4)= 25C Ib 150 mA Pulsed Drain Current lon 1 A Gate Source Voltage Ves + 40 Vv Power Dissipation at T,,,,= 25C Prot 400 mw Operating and Storage Temperature Range TT stg -55 to +150 C ELECTRICAL CHARACTERISTICS (at Tampb = 25C unless otherwise stated). PARAMETER SYMBOL | MIN. MAX. UNIT CONDITIONS. Drain-Source Breakdown | BVpgss 60 V [p= 100A, Ve e0V Voltage Gate-Source Breakdown | Vesan) 0.6 2.5 v [p= 1ImA, Voc= Ves Voltage Gate Body Leakage less 100 nA Vgget 30V, Vpg=0V Zero Gate Voltage Drain | Ipgs 10 pA Vps=48 V, Vg 0V Current (1) 500 pA vo 48 V, Vg OV, T=125C On State Drain Current(1) | Ipion, 750 mA Vpg=10 V, Vgg=10V Static Drain Source On Vosion) 3.75 V Vgg=10V,|p=500MA State Voltage (1) 1,50 V Vgs=5V, [p=200mA Static Drain Source On Rosion) 75 Q Vgg=10V,Ip=500MA State Resistance (1) Forward Sts 100 mS Vpg=10V,!,=500mA Transconductance (1)(2) Input Capacitance (2) Ciss 60 pF Common Source Output | C,,, 25 pF Vpg=25 V, Vgg-0V Capacitance (2) f=1MHz Reverse Transfer Crs 5 pF Capacitance (2) Turn-On Time (2}(3) tron) 10 ns Vpp=15V, |p=600mMA Turn-Off Time (2)(3) troth 10 ns (1) Measured under pulsed conditions. Width=300ys. Duty cycle <2%, (2) Sample test. (3) Switching times measured with 50Q source impedance and <5ns rise time on a pulse generator 3-91