ISL9V5036S3S / ISL9V5036P3 / ISL9V5036S3 ISL9V5036S3S / ISL9V5036P3 / ISL9V5036S3 EcoSPARK(R) 500mJ, 360V, N-Channel Ignition IGBT General Description Applications * Automotive Ignition Coil Driver Circuits * Coil-On Plug Applications The ISL9V5036S3S, ISL9V5036P3, and ISL9V5036S3 are the next generation IGBTs that offer outstanding SCIS capability in the DPak (TO-263) and TO-220 plastic package. These devices are intended for use in automotive ignition circuits, specifically as coil drivers. Internal diodes provide voltage clamping without the need for external components. Features * * * * * EcoSPARK(R) devices can be custom made to specific clamp voltages. Contact your nearest ON Semiconductor sales office for more information. Industry Standard D2-Pak package SCIS Energy = 500mJ at TJ = 25oC Logic Level Gate Drive Qualified to AEC Q101 RoHS Compliant Formerly Developmental Type 49443 Package Symbol COLLECTOR JEDEC TO-263AB D-Pak JEDEC TO-220AB JEDEC TO-262AA EC G EC G R1 GATE G R2 E EMITTER COLLECTOR (FLANGE) COLLECTOR (FLANGE) Device Maximum Ratings TA = 25C unless otherwise noted Symbol BVCER Parameter Collector to Emitter Breakdown Voltage (IC = 1 mA) Ratings 390 Units V BVECS Emitter to Collector Voltage - Reverse Battery Condition (IC = 10 mA) 24 V ESCIS25 At Starting TJ = 25C, ISCIS = 38.5A, L = 670 Hy 500 mJ ESCIS150 mJ At Starting TJ = 150C, ISCIS = 30A, L = 670 Hy 300 IC25 Collector Current Continuous, At TC = 25C, See Fig 9 46 A IC110 Collector Current Continuous, At TC = 110C, See Fig 9 31 A VGEM Gate to Emitter Voltage Continuous 10 V PD Power Dissipation Total TC = 25C 250 W Power Dissipation Derating TC > 25C 1.67 W/C Operating Junction Temperature Range -40 to 175 C Storage Junction Temperature Range -40 to 175 C Max Lead Temp for Soldering (Leads at 1.6mm from Case for 10s) 300 C Tpkg Max Lead Temp for Soldering (Package Body for 10s) 260 C ESD Electrostatic Discharge Voltage at 100pF, 1500 4 kV TJ TSTG TL (c)2009 Semiconductor Components Industries, LLC. October-2017, Rev. 3 Publication Order Number: ISL9V5036S3S/D Device Marking V5036S Device ISL9V5036S3ST Package TO-263AB Reel Size 330mm Tape Width 24mm Quantity 800 V5036P ISL9V5036P3 TO-220AA Tube N/A 50 V5036S ISL9V5036S3 TO-262AA Tube N/A 50 V5036S ISL9V5036S3S TO-263AB Tube N/A 50 Electrical Characteristics TA = 25C unless otherwise noted Symbol Parameter Test Conditions Min Typ Max Units Off State Characteristics BVCER Collector to Emitter Breakdown Voltage IC = 2mA, VGE = 0, RG = 1K, See Fig. 15 TJ = -40 to 150C 330 360 390 V BVCES Collector to Emitter Breakdown Voltage IC = 10mA, VGE = 0, RG = 0, See Fig. 15 TJ = -40 to 150C 360 390 420 V BVECS Emitter to Collector Breakdown Voltage IC = -75mA, VGE = 0V, TC = 25C 30 - - V BVGES Gate to Emitter Breakdown Voltage IGES = 2mA Collector to Emitter Leakage Current VCER = 250V, RG = 1K, See Fig. 11 ICER IECS Emitter to Collector Leakage Current R1 Series Gate Resistance R2 Gate to Emitter Resistance 12 14 - V TC = 25C - - 25 A TC = 150C - - 1 mA VEC = 24V, See TC = 25C Fig. 11 TC = 150C - - 1 mA - - 40 mA - 75 - 10K - 30K On State Characteristics VCE(SAT) Collector to Emitter Saturation Voltage IC = 10A, VGE = 4.0V TC = 25C, See Fig. 4 - 1.17 1.60 V VCE(SAT) Collector to Emitter Saturation Voltage IC = 15A, VGE = 4.5V TC = 150C - 1.50 1.80 V - 32 - nC Dynamic Characteristics QG(ON) Gate Charge IC = 10A, VCE = 12V, VGE = 5V, See Fig. 14 VGE(TH) Gate to Emitter Threshold Voltage IC = 1.0mA, VCE = VGE, See Fig. 10 VGEP Gate to Emitter Plateau Voltage IC = 10A, TC = 25C 1.3 - 2.2 V TC = 150C 0.75 - 1.8 V - 3.0 - V VCE = 12V Switching Characteristics td(ON)R trR td(OFF)L tfL SCIS Current Turn-On Delay Time-Resistive Current Rise Time-Resistive Current Turn-Off Delay Time-Inductive Current Fall Time-Inductive Self Clamped Inductive Switching VCE = 14V, RL = 1, VGE = 5V, RG = 1K TJ = 25C, See Fig. 12 VCE = 300V, L = 2mH, VGE = 5V, RG = 1K TJ = 25C, See Fig. 12 - 0.7 4 s - 2.1 7 s - 10.8 15 s - 2.8 15 s TJ = 25C, L = 670 H, RG = 1K, VGE = 5V, See Fig. 1 & 2 - - 500 mJ TO-263, TO-220, TO-262 - - 0.6 C/W Thermal Characteristics RJC Thermal Resistance Junction-Case www.onsemi.com 2 ISL9V5036S3S / ISL9V5036P3 / ISL9V5036S3 Package Marking and Ordering Information ISCIS, INDUCTIVE SWITCHING CURRENT (A) ISCIS, INDUCTIVE SWITCHING CURRENT (A) 45 RG = 1K, VGE = 5V,Vdd = 14V 40 35 30 TJ = 25C 25 20 15 TJ = 150C 10 5 SCIS Curves valid for Vclamp Voltages of <390V 45 RG = 1K, VGE = 5V,Vdd = 14V 40 35 30 25 20 TJ = 25C 15 TJ = 150C 10 5 SCIS Curves valid for Vclamp Voltages of <390V 0 0 0 50 100 150 200 250 300 350 0 2 4 tCLP, TIME IN CLAMP (S) 1.10 ICE = 6A 1.05 VGE = 3.7V VGE = 4.0V 1.00 VGE = 4.5V VGE = 5.0V VGE = 8.0V 0.90 0.85 -50 -25 0 25 50 75 100 125 150 1.25 ICE = 10A 1.20 VGE = 3.7V 1.10 VGE = 4.5V VGE = 5.0V VGE = 8.0V 1.05 1.00 -50 175 VGE = 4.0V 1.15 -25 25 0 TJ, JUNCTION TEMPERATURE (C) 50 75 100 125 150 175 TJ, JUNCTION TEMPERATURE (C) Figure 3. Collector to Emitter On-State Voltage vs Junction Temperature Figure 4.Collector to Emitter On-State Voltage vs Junction Temperature 50 50 ICE, COLLECTOR TO EMITTER CURRENT (A) ICE, COLLECTOR TO EMITTER CURRENT (A) 10 8 Figure 2. Self Clamped Inductive Switching Current vs Inductance VCE, COLLECTOR TO EMITTER VOLTAGE (V) VCE, COLLECTOR TO EMITTER VOLTAGE (V) Figure 1. Self Clamped Inductive Switching Current vs Time in Clamp 0.95 6 L, INDUCTANCE (mHy) VGE = 8.0V VGE = 5.0V 40 VGE = 4.5V VGE = 4.0V VGE = 3.7V 30 20 10 TJ = - 40C 1.0 2.0 3.0 VGE = 5.0V 40 VGE = 4.5V VGE = 4.0V VGE = 3.7V 30 20 10 TJ = 25C 0 0 0 VGE = 8.0V 4.0 0 VCE, COLLECTOR TO EMITTER VOLTAGE (V) 1.0 2.0 3.0 4.0 VCE, COLLECTOR TO EMITTER VOLTAGE (V) Figure 5. Collector Current vs Collector to Emitter On-State Voltage Figure 6. Collector Current vs Collector to Emitter On-State Voltage www.onsemi.com 3 ISL9V5036S3S / ISL9V5036P3 / ISL9V5036S3 Typical Characteristics 50 ICE, COLLECTOR TO EMITTER CURRENT (A) ICE, COLLECTOR TO EMITTER CURRENT (A) 50 VGE = 8.0V VGE = 5.0V VGE = 4.5V 40 VGE = 4.0V VGE = 3.7V 30 20 10 TJ = 175C 0 0 1.0 2.0 3.0 DUTY CYCLE < 0.5%, VCE = 5V PULSE DURATION = 250s 40 30 TJ = 175C 20 TJ = 25C 10 TJ = -40C 0 1.5 1.0 4.0 VCE, COLLECTOR TO EMITTER VOLTAGE (V) 2.5 2.0 3.0 3.5 4.0 4.5 VGE, GATE TO EMITTER VOLTAGE (V) Figure 7. Collector to Emitter On-State Voltage vs Collector Current Figure 8. Transfer Characteristics 40 30 20 10 0 25 50 75 100 125 150 VCE = VGE 2.0 VGE = 4.0V VTH, THRESHOLD VOLTAGE (V) ICE, DC COLLECTOR CURRENT (A) 50 ICE = 1mA 1.8 1.6 1.4 1.2 1.0 175 -50 -25 0 TC, CASE TEMPERATURE (C) 50 75 100 125 150 175 TJ, JUNCTION TEMPERATURE (C) Figure 9. DC Collector Current vs Case Temperature Figure 10. Threshold Voltage vs Junction Temperature 20 10000 ICE = 6.5A, VGE = 5V, RG = 1K Resistive tOFF 18 VECS = 24V 1000 16 SWITCHING TIME (S) LEAKAGE CURRENT (A) 25 100 VCES = 300V 10 VCES = 250V 14 Inductive tOFF 12 10 8 6 1 Resistive tON 4 0.1 -50 -25 0 25 50 75 100 125 150 175 2 25 TJ, JUNCTION TEMPERATURE (C) Figure 11. Leakage Current vs Junction Temperature 50 75 100 125 150 TJ, JUNCTION TEMPERATURE (C) Figure 12. Switching Time vs Junction Temperature www.onsemi.com 4 175 ISL9V5036S3S / ISL9V5036P3 / ISL9V5036S3 Typical Characteristics (Continued) ISL9V5036S3S / ISL9V5036P3 / ISL9V5036S3 Typical Characteristics (Continued) 3000 8 IG(REF) = 1mA, RL = 0.6, TJ = 25C VGE, GATE TO EMITTER VOLTAGE (V) FREQUENCY = 1 MHz C, CAPACITANCE (pF) 2500 2000 CIES 1500 1000 CRES 500 COES 7 6 5 VCE = 12V 4 3 2 VCE = 6V 1 0 0 5 10 15 20 0 25 0 10 VCE, COLLECTOR TO EMITTER VOLTAGE (V) 20 30 40 50 QG, GATE CHARGE (nC) Figure 13. Capacitance vs Collector to Emitter Voltage Figure 14. Gate Charge 360 TJ = - 40C BVCER, BREAKDOWN VOLTAGE (V) ICER = 10mA 358 356 354 TJ = 175C 352 TJ = 25C 350 348 346 344 342 340 10 1000 100 2000 3000 RG, SERIES GATE RESISTANCE (k) ZthJC, NORMALIZED THERMAL RESPONSE Figure 15. Breakdown Voltage vs Series Gate Resistance 100 0.5 0.2 10-1 0.1 0.05 t1 0.02 10-2 0.01 PD t2 DUTY FACTOR, D = t1 / t2 PEAK TJ = (PD X ZJC X RJC) + TC 10-3 SINGLE PULSE 10-4 10-6 10-5 10-4 10-3 10-2 T1, RECTANGULAR PULSE DURATION (s) Figure 16. IGBT Normalized Transient Thermal Impedance, Junction to Case www.onsemi.com 5 10-1 L VCE R or L C PULSE GEN LOAD C RG RG = 1K DUT G + DUT G VCE - 5V E E Figure 17. Inductive Switching Test Circuit Figure 18. tON and tOFF Switching Test Circuit VCE BVCES tP VCE L IAS VDD VARY tP TO OBTAIN REQUIRED PEAK IAS + RG VDD - VGS DUT tP 0V IAS 0 0.01 tAV Figure 19. Energy Test Circuit Figure 20. Energy Waveforms www.onsemi.com 6 ISL9V5036S3S / ISL9V5036P3 / ISL9V5036S3 Test Circuits and Waveforms th JUNCTION REV 1 May 2002 ISL9V5036S3S / ISL9V3536P3 / ISL9V5036S3 CTHERM1 th 6 4.0e2 CTHERM2 6 5 3.6e-3 CTHERM3 5 4 4.9e-2 CTHERM4 4 3 3.2e-1 CTHERM5 3 2 3.0e-1 CTHERM6 2 tl 1.6e-2 RTHERM1 CTHERM1 6 RTHERM1 th 6 1.0e-2 RTHERM2 6 5 1.4e-1 RTHERM3 5 4 1.0e-1 RTHERM4 4 3 9.0e-2 RTHERM5 3 2 9.4e-2 RTHERM6 2 tl 1.9e-2 RTHERM2 CTHERM2 5 SABER Thermal Model SABER thermal model ISL9V5036S3S / ISL9V5036P3 / ISL9V5036S3 template thermal_model th tl thermal_c th, tl { ctherm.ctherm1 th 6 = 4.0e2 ctherm.ctherm2 6 5 = 3.6e-3 ctherm.ctherm3 5 4 = 4.9e-2 ctherm.ctherm4 4 3 = 3.2e-1 ctherm.ctherm5 3 2 = 3.0e-1 ctherm.ctherm6 2 tl = 1.6e-2 RTHERM3 CTHERM3 4 CTHERM4 RTHERM4 rtherm.rtherm1 th 6 = 1.0e-2 rtherm.rtherm2 6 5 = 1.4e-1 rtherm.rtherm3 5 4 = 1.0e-1 rtherm.rtherm4 4 3 = 9.0e-2 rtherm.rtherm5 3 2 = 9.4e-2 rtherm.rtherm6 2 tl = 1.9e-2 } 3 CTHERM5 RTHERM5 2 CTHERM6 RTHERM6 tl www.onsemi.com 7 CASE ISL9V5036S3S / ISL9V5036P3 / ISL9V5036S3 SPICE Thermal Model ON Semiconductor and are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries. 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