BAT74,235 - NXP Semiconductors

1. Product profile

1.1 General description

Planar Schottky barrier double diode with an integrated guard ring for stress protection.

Two electrically isolated Schottky barrier diodes, encapsulated in a small SOT143B

Surface-Mounted Device (SMD) plastic package.

1.2 Features and benefits

Low forward voltage

Guard-ring protected

Small SMD plastic package

1.3 Applications

Ultra high-speed switching

Voltage clamping

Protection circuits

Blocking diodes

1.4 Quick reference data

2. Pinning information

BAT74

Schottky barrier double diode

Rev. 03 — 19 April 2010 Product data sheet

Table 1. Quick reference data

Symbol Parameter Conditions Min Typ Max Unit

Per diode

IFforward current - - 200 mA

VRreverse voltage - - 30 V

VFforward voltage IF= 100 mA - - 800 mV

Table 2. Pinning

Pin Description Simplified outline Graphic symbol

1 cathode (diode 1)

2 cathode (diode 2)

3 anode (diode 2)

4 anode (diode 1)

006aaa4

Product data sheet Rev. 03 — 19 April 2010 2 of 10

NXP Semiconductors BAT74

Schottky barrier double diode

3. Ordering information

4. Marking

[1] * = -: made in Hong Kong

* = p: made in Hong Kong

* = t: made in Malaysia

* = W: made in China

5. Limiting values

[1] Series connection.

[2] If both diodes are in forward operation at the same moment, total device current is max. 110 mA. If one

diode is in reverse operation and the other is in forward operation at the same moment, total device current

is max. 200 mA.

Table 3. Ordering information

Type number Package

Name Description Version

BAT74 - plastic surface-mounted package; 4 leads SOT143B

Table 4. Marking codes

Type number Marking code[1]

BAT74 *L4

Table 5. Limiting values

In accordance with the Absolute Maximum Rating System (IEC 60134).

Symbol Parameter Conditions Min Max Unit

Per diode

VRreverse voltage - 30 V

IFforward current - 200 mA

IFRM repetitive peak forward

current tp≤1s; δ≤0.5 - 300 mA

IFSM non-repetitive peak forward

current tp<10ms - 600 mA

Ptot total power dissipation Tamb ≤25 °C-230mW

Tjjunction temperature - 125 °C

Tamb ambient temperature −65 +125 °C

Tstg storage temperature −65 +150 °C

Double diode operation

VRreverse voltage - 30 V

[1] -60V

IFforward current [2] -110mA

IFRM repetitive peak forward

current tp≤1s; δ≤0.5 - 200 mA

Product data sheet Rev. 03 — 19 April 2010 3 of 10

NXP Semiconductors BAT74

Schottky barrier double diode

6. Thermal characteristics

[1] Refer to SOT143B standard mounting conditions.

7. Characteristics

[1] Temperature coefficient of forward voltage −0.6 %/K.

[2] Pulse test: tp= 300 μs; δ=0.02.

[3] When switched from IF= 10 mA to IR=10mA; R

L= 100 Ω; measured at IR=1mA.

Table 6. Thermal characteristics

Symbol Parameter Conditions Min Typ Max Unit

Rth(j-a) thermal resistance from

junction to ambient in free air [1] - - 500 K/W

Table 7. Characteristics

Tamb =25

C unless otherwise specified.

Symbol Parameter Conditions Min Typ Max Unit

Per diode

VFforward voltage IF= 0.1 mA - - 240 mV

IF=1mA [1] - - 320 mV

IF= 10 mA - - 400 mV

IF= 30 mA - - 500 mV

IF= 100 mA - - 800 mV

IRreverse current VR=25V [2] --2 μA

Cddiode capacitance VR=1V; f=1MHz --10pF

trr reverse recovery

time [3] --5 ns

Product data sheet Rev. 03 — 19 April 2010 4 of 10

NXP Semiconductors BAT74

Schottky barrier double diode

(1) Tamb = 125 °C

(2) Tamb =85°C

(3) Tamb =25°C

(1) Tamb = 125 °C

(2) Tamb =85°C

(3) Tamb =25°C

Fig 1. Forward current as a function of forward

voltage; typical values Fig 2. Reverse current as a functio n o f reverse

voltage; typical values

f=1MHz; T

amb =25°C Standard footprint

Fig 3. Diod e capacitance as a function of reverse

voltage; typical values Fig 4. Power derating curve

103

102

10−1

(mA)

VF (V)

1.20.80.40

msa892

(3)(2)(1)

0102030

VR (V)

103

102

10−1

(μA)

(1)

(2)

(3)

msa893

0102030

(V)

(pF)

msa891 msa894

100

200

300

Ptot

(mW)

150750 Tamb (°C)

Product data sheet Rev. 03 — 19 April 2010 5 of 10

NXP Semiconductors BAT74

Schottky barrier double diode

8. Test information

9. Package outline

10. Packing information

[1] For further information and the availability of packing methods, see Section 14.

(1) IR=1mA

Fig 5. Re verse recovery time test circuit and waveforms

trr

(1)

+ I

output signal

10 %

90 %

input signal

V = V

= 50 ΩI

D.U.T.

= 50 Ω

SAMPLING

OSCILLOSCOPE

mga881

Fig 6. Package outline BAT74 (SOT143B)

04-11-16Dimensions in mm

3.0

2.8 1.1

0.9

2.5

2.1

1.4

1.2

1.7

1.9

0.48

0.38

0.15

0.09

0.45

0.15

0.88

0.78

Table 8. Packing methods

The indicated -xxx are the last thre e digits of the 12NC ordering code.[1]

Type number Package Description Packing quantity

3000 10000

BAT74 SOT143B 4 mm pitch, 8 mm tape and reel -215 -235

Product data sheet Rev. 03 — 19 April 2010 6 of 10

NXP Semiconductors BAT74

Schottky barrier double diode

11. Soldering

Fig 7. Reflow soldering footprint BAT74 (SOT143B)

Fig 8. Wave soldering footprint BAT74 (SOT143B)

solder lands

solder resist

occupied area

solder paste

sot143b_

0.9

0.60.7

3.25

0.6

(3×)

0.6

(3×)

0.5

(3×)

0.7

(3×)

1.9

0.75 0.95

Dimensions in mm

solder lands

solder resist

occupied area

preferred transport direction during soldering

sot143b_

4.6

4.45

1.2

(3×)

1.425

(3×)

1.425

1.2

2.2

2.575

Dimensions in mm

Product data sheet Rev. 03 — 19 April 2010 7 of 10

NXP Semiconductors BAT74

Schottky barrier double diode

12. Revision history

Table 9. Revision history

Document ID Release date Data sheet status Change notice Supersedes

BAT74_3 20100419 Product data sheet - BAT74_2

Modifications: •The format of this data sheet has been redesigned to comply with the new identity

guidelines of NXP Semiconductors.

•Legal texts have been adapted to the new company name where appropriate .

•Section 1.1 “General description”: amended

•Table 1 “Quick reference data”: added

•Section 4 “Marking”: updated

•Section 8 “Test information ”: added

•Figure 5: enhanced

•Figure 6: superseded by minimized package outline drawing

•Section 10 “Packing information”: added

•Section 11 “Soldering”: added

•Section 13 “Legal information”: updated

BAT74_2 20010905 Product specification - BAT74_1

BAT74_1 19960319 Product specification - -

Product data sheet Rev. 03 — 19 April 2010 8 of 10

NXP Semiconductors BAT74

Schottky barrier double diode

13. Legal information

13.1 Data sheet status

[1] Please consult the most recently issued document before initiating or completing a design.

[2] The term ‘short data sheet’ is explained in section “Definitions”.

[3] The product status of de vice(s) descr ibed in th is document m ay have cha nged since thi s document w as publish ed and may di ffe r in case of multiple devices. The latest product status

information is available on the Internet at URL http://www.nxp.com.

13.2 Definitions

Draft — The document is a draft version only. The content is still under

internal review and subject to formal approval, which may result in

modifications or additions. NXP Semiconductors does not give any

representations or warranties as to the accuracy or completeness of

information included herein and shall have no liab ility for the consequences of

use of such information.

Short data sheet — A short data sheet is an extract from a full data sheet

with the same product type number(s) and tit le. A short data sh eet is intended

for quick reference only and shou ld not b e relied u pon to cont ain det ailed and

full information. For detailed and full information see the relevant full data

sheet, which is available on request via the local NXP Semicond uctors sales

office. In case of any inconsistency or conflict wit h the short data sheet, th e

full data sheet shall pre va il.

Product specificat ion — The information and data provided in a Product

data sheet shall define the specification of the product as agr eed between

NXP Semiconductors and its customer, unless NXP Semiconductors and

customer have explicitly agreed otherwise in writing. In no event however,

shall an agreement be valid in which the NXP Semiconductors product is

deemed to off er functions and qualities beyond those described in the

Product data sheet.

13.3 Disclaimers

Limited warr a nty and liability — Information in this document is believed to

be accurate and reliable. However, NXP Semiconductors does not give any

representations or warrant ies, expressed or implied, as to the accuracy or

completeness of such information and shall have no liability for the

consequences of use of such information.

In no event shall NXP Semiconductors be liable for any indirect, incidental,

punitive, special or consequ ential damages (including - wit hout limitation - lost

profits, lost savings, business interruption, costs related to the removal or

replacement of any products or rework charges) whether or not such

damages are based on tort (including negligence), warranty, breach of

contract or any other legal theory.

Notwithstanding any damages that customer might incur for any reason

whatsoever, NXP Semiconductors’ ag gregate and cumulative l iability towards

customer for the products described herein shall be limited in accordance

with the Terms and conditions of commercial sale of NXP Semicondu ctors.

Right to make changes — NXP Semiconductors reserves the right to make

changes to information published in this document, including without

limitation specifications and product descriptions, at any time and without

notice. This document supersedes and replaces all informa tion supplied prior

to the publication hereof .

Suitability for use — NXP Semiconductors products are not designed,

authorized or warranted to be suit able for use in life support, life-critical or

safety-critical systems or equipment, nor in applications where failure or

malfunction of an NXP Semiconductors product can reasonably be expected

to result in perso nal injury, death or severe property or environmental

damage. NXP Semiconductors accepts no liab ility for inclusion and/or use of

NXP Semiconductors products in such equipment or applications and

therefore such inclusion and/or use is at the customer’s own risk.

Applications — Applications that are described herein for any of these

products are for illustrative purposes only. NXP Semiconductors makes no

representation or warranty that such applications will be suitable for the

specified use without further testing or modification.

Customers are responsible for the design and ope ration of their applications

and products using NXP Semiconductors product s, and NXP Semiconductors

accepts no liability for any assistance with applicati ons or customer product

design. It is customer’s sole responsibility to determine whether the NXP

Semiconductors product is suit able and fit for the custome r’s applications and

products planned, as well as fo r the planned application and use of

customer’s third party customer(s). Custo mers should provide appropriate

design and operating safeguards to minimize the risks associated with their

applications and products.

NXP Semiconductors does not accept any liability related to any default,

damage, costs or problem which is based on any weakness or default in the

customer’s applications or products, or the application or use by customer’s

third party custo m er(s). Customer is responsible for doing all necessary

testing for the customer’s applications and products using NXP

Semiconductors products in order to avoid a default of the applications and

the products or of the application or use by customer’s third party

customer(s). NXP does not accept any liability in this respect.

Limiting values — Stress above one or more limiting values (as defined in

the Absolute Maximum Ratings System of IEC 60134) will cause permanent

damage to the device. Limiting values are stress ratings only and (proper)

operation of the device at these or any other conditions above those given in

the Recommended operating conditions section (if present) or the

Characteristics sections of this document is not warranted. Constant or

repeated exposure to limiting values will permanently and irreversibly affect

the quality and reliability of the device.

Terms and conditions of commercial sale — NXP Semiconductors

products are sold subject to the general terms and conditions of commercial

sale, as published at http://www.nxp.com/profile/terms, unless otherwise

agreed in a valid written individua l agreement. In case an individual

agreement is concluded only the ter m s and conditions of the respective

agreement shall apply. NXP Semiconductors hereby expressly objects to

applying the customer’s general terms and conditions with regard to the

purchase of NXP Semiconductors products by customer.

No offer to sell or license — Nothing i n this document may be interpreted or

construed as an of fer t o sell product s that is open for accept ance or the gr ant,

conveyance or implication of any license under any copyrights, patents or

other industrial or inte llectual property rights.

Export control — This document as well as the item(s) described herein

may be subject to export control regulatio ns. Export might require a prior

authorization from national authorities.

Document status[1][2] Product status[3] Definition

Objective [short] data sheet Development This document contains data from the objective specification for product development.

Preliminary [short] dat a sheet Qualification This document contains data from the preliminary specification.

Product [short] data sheet Production This document contains the product specification.

Product data sheet Rev. 03 — 19 April 2010 9 of 10

NXP Semiconductors BAT74

Schottky barrier double diode

Quick reference data — The Quick reference data is an extract of the

product data given in the Limiting values and Characteristics sections of this

document, and as such is not complete, exhaustive or legally binding.

13.4 Trademarks

Notice: All referenced b rands, produc t names, service names and trademarks

are the property of their respective ow ners.

14. Contact information

For more information, please visit: http://www.nxp.com

For sales office addresses, please send an email to: salesaddresses@nxp.com

NXP Semiconductors BAT74

Schottky barrier double diode

For more information, please visit: http://www.nxp.com

For sales office addresses, please send an email to: salesaddresses@nxp.com

Date of release: 19 April 2010

Document identifier: BAT74_3

Please be aware that important notices concerning this document and the product(s)

described herein, have been included in section ‘Legal information’.

15. Contents

1 Product profile. . . . . . . . . . . . . . . . . . . . . . . . . . 1

1.1 General description . . . . . . . . . . . . . . . . . . . . . 1

1.2 Features and benefits. . . . . . . . . . . . . . . . . . . . 1

1.3 Applications . . . . . . . . . . . . . . . . . . . . . . . . . . . 1

1.4 Quick reference data . . . . . . . . . . . . . . . . . . . . 1

2 Pinning information. . . . . . . . . . . . . . . . . . . . . . 1

3 Ordering information. . . . . . . . . . . . . . . . . . . . . 2

4 Marking. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2

5 Limiting values. . . . . . . . . . . . . . . . . . . . . . . . . . 2

6 Thermal characteristics . . . . . . . . . . . . . . . . . . 3

7 Characteristics. . . . . . . . . . . . . . . . . . . . . . . . . . 3

8 Test information. . . . . . . . . . . . . . . . . . . . . . . . . 5

9 Package outline . . . . . . . . . . . . . . . . . . . . . . . . . 5

10 Packing information . . . . . . . . . . . . . . . . . . . . . 5

11 Soldering . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6

12 Revision history. . . . . . . . . . . . . . . . . . . . . . . . . 7

13 Legal information. . . . . . . . . . . . . . . . . . . . . . . . 8

13.1 Data sheet status . . . . . . . . . . . . . . . . . . . . . . . 8

13.2 Definitions. . . . . . . . . . . . . . . . . . . . . . . . . . . . . 8

13.3 Disclaimers. . . . . . . . . . . . . . . . . . . . . . . . . . . . 8

13.4 Trademarks. . . . . . . . . . . . . . . . . . . . . . . . . . . . 9

14 Contact information. . . . . . . . . . . . . . . . . . . . . . 9

15 Contents . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10