TIP115/TIP116/TIP117 — PNP Epitaxial Silicon Darlington Transistor
© 2007 Fairchild Semiconductor Corporation www.fairchildsemi.com
TIP115/TIP116/TIP117 Rev. 1.0.0 1
November 2008
TIP115/TIP116/TIP117
PNP Epitaxial Silicon Darlington Transistor
• Monolithic Construction With Built In Base-Emitter Shunt Resistors
• High DC Current Gain : hFE=1000 @ VCE= -4V, IC= -1A (Min.)
• Low Collector-Emitter Saturation Voltage
• Industrial Use
• Complementary to TIP110/111/112
Absolute Maximum Ratings* Ta = 25°C unless otherwise noted
* These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.
Symbol Parameter Ratings Units
VCBO Collector-Base Voltage : TIP115
: TIP116
: TIP117
- 60
- 80
- 100
V
V
V
VCEO
Collector-Emitter Voltage : TIP115
: TIP116
: TIP117
- 60
- 80
- 100
V
V
V
VEBO Emitter-Base Voltage - 5 V
IC Collector Current (DC) - 2 A
ICP Collector Current (Pulse) -4 A
IB Base Current (DC) - 50 mA
PC Collector Dissipation (Ta=25°C) 2 W
Collector Dissipation (TC=25°C) 50 W
TJ Junction Temperature 150 °C
TSTG Storage Temperature - 65 ~ 150 °C
1.Base 2.Collector 3.Emitter
1TO-220
Equivalent Circuit
B
E
C
R1 R2
R 1 10 k W@
R2 0.6 k W@
TIP115/TIP116/TIP117 — PNP Epitaxial Silicon Darlington Transistor
© 2007 Fairchild Semiconductor Corporation www.fairchildsemi.com
TIP115/TIP116/TIP117 Rev. 1.0.0 2
Electrical Characteristics* Ta=25°C unless otherwise noted
* Pulse Test: Pulse Width£300ms, Duty Cycle£2%
Symbol Parameter Test Condition Min. Typ. Max. Units
VCEO(sus) Collector-Emitter Sustaining Voltage
: TIP115
: TIP116
: TIP117
IC = -30mA, IB = 0 -60
-80
-100
V
V
V
ICEO Collector Cut-off Current
: TIP115
: TIP116
: TIP117
VCE = -30V, IB = 0
VCE = -40V, IB = 0
VCE = -50V, IB = 0
-2
-2
-2
mA
mA
mA
ICBO Collector Cut-off Current
: TIP115
: TIP116
: TIP117
VCB = -60V, IE = 0
VCB = -80V, IE = 0
VCB = -100V, IE = 0
-1
-1
-1
mA
mA
mA
IEBO Emitter Cut-off Current VBE = -5V, IC = 0 -2 mA
hFE DC Current Gain VCE = -4V,IC = -1A
VCE = -4V, IC = -2A
1000
500
VCE(sat) Collector-Emitter Saturation Voltage IC = -2A, IB = -8mA -2.5 V
VBE(on) Base-Emitter On Voltage VCE = -4V, IC = -2A -2.8 V
Cob Output Capacitance VCB = -10V, IE = 0, f =
0.1MHz
200 pF
TIP115/TIP116/TIP117 — PNP Epitaxial Silicon Darlington Transistor
© 2007 Fairchild Semiconductor Corporation www.fairchildsemi.com
TIP115/TIP116/TIP117 Rev. 1.0.0 3
Typical Characteristics
Figure 1. Static Characteristic Figure 2. DC current Gain
Figure 3. Collector-Emitter Saturation Voltage
Base-Emitter Saturation Voltage
Figure 4. Collector Output Capacitance
Figure 5. Safe Operating Area Figure 6. Power Derating
-0 -1 -2 -3 -4 -5
-0
-1
-2
-3
-4
-5
IB = -800mA
IB = -900mA
IB = -1000mA
IB = -700mA
IB = -600mA
IB = -500mA
I
B
= -400
m
A
IB = -300mA
IB = -200mA
IB = -100mA
IC[A], COLLECTOR CURRENT
VCE[V], COLLECTOR-EMITTER VOLTAGE
-0.01 -0.1 -1 -10
10
100
1k
10k
VCE = -4V
hFE, DC CURRENT GAIN
IC[A], COLLECTOR CURRENT
-0.01 -0.1 -1 -10
-0.1
-1
-10
-100
IC = 500 IB
VCE(sat)
VBE(sat)
VBE(sat), VCE(sat)[V], SATURATION VOLTAGE
IC[A], COLLECTOR CURRENT
-0.01 -0.1 -1 -10 -100
1
10
100
1000
f = 0.1 MHz
Cob[pF], CAPACITANCE
VCB[V], COLLECTOR-BASE VOLTAGE
-1 -10 -100
-0.1
-1
-10
5 ms
1 ms
DC
TIP 115
TIP 116
TIP 117
IC[A], COLLECTOR CURRENT
VCE[V], COLLECTOR-EMITTER VOLTAGE
0 25 50 75 100 125 150 175
0
10
20
30
40
50
60
70
80
PC[W], POWER DISSIPATION
TC[oC], CASE TEMPERATURE
TIP115/TIP116/TIP117 — PNP Epitaxial Silicon Darlington Transistor
© 2007 Fairchild Semiconductor Corporation www.fairchildsemi.com
TIP115/TIP116/TIP117 Rev. 1.0.0 4
Mechanical Dimensions
TO220
TIP115/TIP116/TIP117 PNP Epitaxial Silicon Darlington TransistorTIP115/TIP116/TIP117
© 2008 Fairchild Semiconductor Corporation www.fairchildsemi.com
TIP115/TIP116/TIP117 Rev. A1 5
Rev. I31
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