TSM2N7000K
60V N-Channel MOSFET
1/6
Version: B12
TO
-
92
PRODUCT SUMMARY
V
DS
(V) R
DS(on)
(Ω) I
D
(mA)
60 5 @ V
GS
= 10V 100
5.5 @ V
GS
= 5V 100
Features
● Low On-Resistance
● ESD Protection
● High Speed Switching
● Low Voltage Drive
Ordering Information
Part No. Package
Packing
TSM2N7000KCT B0 TO-92 1Kpcs / Bulk
TSM2N7000KCT A3 TO-92 2Kpcs / Ammo
Absolute Maximum Rating
(Ta = 25
o
C unless otherwise noted)
Parameter Symbol Limit Unit
Drain-Source Voltage V
DS
60 V
Gate-Source Voltage V
GS
±20 V
Drain Current Continuous @ T
A
=25ºC
I
D
300 mA
Pulsed I
DM
700
Drain Reverse Current Continuous @ T
A
=25ºC
I
DR
300 mA
Pulsed I
DMR
700
Maximum Power Dissipation P
D
400 mW
Operating Junction Temperature T
J
+150
o
C
Operating Junction and Storage Temperature Range T
J
, T
STG
-55 to +150
o
C
Thermal Performance
Parameter Symbol Limit Unit
Lead Temperature (1/8” from case) T
L
10 S
Junction to Ambient Thermal Resistance (PCB mounted) RӨ
JA
357 ºC/W
Notes:
a. Pulse width limited by the Maximum junction temperature
b. Surface Mounted on FR4 Board, t ≤ 5 sec.
Block Diagram
N-Channel MOSFET
Pin
Definition
:
1. Source
2. Gate
3. Drain
TSM2N7000K
60V N-Channel MOSFET
2/6
Version: B12
Electrical Specifications
(Ta = 25
o
C, unless otherwise noted)
Parameter Conditions Symbol
Min Typ Max Unit
Static
Drain-Source Breakdown Voltage V
GS
= 0V, I
D
= 10µA BV
DSS
60 -- -- V
Gate Threshold Voltage V
DS
= V
GS
, I
D
= 250µA V
GS(TH)
1.0 -- 2.5 V
Gate Body Leakage V
GS
= ±20V, V
DS
= 0V I
GSS
-- -- ±10 uA
Zero Gate Voltage Drain Current V
DS
= 60V, V
GS
= 0V I
DSS
-- -- 1.0 uA
Drain-Source On-State Resistance V
GS
= 10V, I
D
= 100mA R
DS(ON)
-- 3 5 Ω
V
GS
= 5V, I
D
= 100mA -- 3.6 5.5
Forward Transconductance V
DS
= 10V, I
D
= 200mA g
fs
100 -- -- mS
Diode Forward Voltage I
S
= 300mA, V
GS
= 0V V
SD
-- 0.9 1.2 V
Dynamic
b
Total Gate Charge V
DS
= 10V, I
D
= 250mA,
V
GS
= 4.5V
Q
g
-- 0.4 -- nC
Input Capacitance V
DS
= 25V, V
GS
= 0V,
f = 1.0MHz
C
iss
-- 7.32 --
pF
Output Capacitance C
oss
-- 3.42 --
Reverse Transfer Capacitance C
rss
-- 7.63 --
Switching
c
Turn-On Delay Time V
DD
= 30V, R
G
= 10Ω
I
D
= 100mA, V
GEN
= 10V,
t
d(on)
-- 25 -- nS
Turn-Off Delay Time t
d(off)
-- 35 --
Notes:
a. pulse test: PW ≤300µS, duty cycle ≤2%
b. For DESIGN AID ONLY, not subject to production testing.
b. Switching time is essentially independent of operating temperature.
TSM2N7000K
60V N-Channel MOSFET
3/6
Version: B12
Electrical Characteristics Curve
(Ta = 25
o
C, unless otherwise noted)
Output Characteristics
Transfer Characteristics
On-Resistance vs. Drain Current
Forward Transfer Admittance vs. Drain Current
On-Resistance vs. Gate-Source Voltage
Power Derating Curve
TSM2N7000K
60V N-Channel MOSFET
4/6
Version: B12
TO-92 Mechanical Drawing
Marking Diagram
Y
= Year
Code
M
= Month Code
(A=Jan, B=Feb, C=Mar, D=Apl, E=May, F=Jun, G=Jul, H=Aug,
I=Sep, J=Oct, K=Nov, L=Dec)
L
= Lot Code
TO-92 DIMENSION
DIM
MILLIMETERS INCHES
MIN MAX MIN MAX
A 4.30 4.70 0.169 0.185
B 4.30 4.70 0.169 0.185
C 13.53 (typ) 0.532 (typ)
D 0.39 0.49 0.015 0.019
E 1.18 1.28 0.046 0.050
F 3.30 3.70 0.130 0.146
G 1.27 1.31 0.050 0.051
H 0.33 0.43 0.013 0.017
TSM2N7000K
60V N-Channel MOSFET
5/6
Version: B12
TO-92 Ammo Pack Mechanical Drawing
TSM2N7000K
60V N-Channel MOSFET
6/6
Version: B12
Notice
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