1. Product profile
1.1 General description
Planar p assivated hi gh commut ation three q uadrant tria c in a SOT428 su rface-mount able
plastic package. This "series B" triac is intended for use in circuits where high static and
dynamic dV/dt and high dI/dt can occur. The "series B" will commutate the full rated RMS
current at the maximum rated junction temperature, without the aid of a snubber.
1.2 Features and benefits
3Q technology for improved noise
immunity
High commutation capability with
maximum false trigger immunity
High immunity to false turn-on by dV/dt
High voltage capability
Planar passivated for voltage
ruggedness and reliability
Surface-mountable package
Triggering in three quadrants only
1.3 Applications
Electronic thermostats
General purpose motor controls
Rectifier-fed DC inductive loads e.g.
DC motors and solenoids
1.4 Quick reference data
BTA208S-600B
3Q Hi-Com Triac
Rev. 3 — 13 April 2011 Product data sheet
DPAK
Table 1. Quick reference data
Symbol Parameter Conditions Min Typ Max Unit
VDRM repetitive peak
off-state voltage --600V
ITSM non-repetitive
peak on-state
current
full sine wave; Tj(init) =2C;
tp= 20 ms; see Figure 4;
see Figure 5
--65A
IT(RMS) RMS on-state
current full sine wave; Tmb 102 °C;
see Figure 1; see Figure 2;
see Figure 3
--8A
Static characteristics
IGT gate trigger
current VD=12V; I
T= 0.1 A; T2+ G+;
Tj=2C; see Figure 7 2 1850mA
VD=12V; I
T= 0.1 A; T2+ G-;
Tj=2C; see Figure 7 2 2150mA
VD=12V; I
T= 0.1 A; T2- G-;
Tj=2C; see Figure 7 2 3450mA
BTA208S-600B All information provided in this document is subject to legal disclaimers. © NXP B.V. 2011. All rights reserved.
Product data sheet Rev. 3 — 13 April 2011 2 of 13
NXP Semiconductors BTA208S-600B
3Q Hi-Com Triac
2. Pinning information
3. Ordering information
4. Limiting values
Table 2. Pinning info rmation
Pin Symbol Description Simplified outline Graphi c sy mbol
1 T1 main terminal 1
SOT428 (DPAK)
2 T2 main terminal 2
3 G gate
mb T2 mounti n g ba se ;
main terminal 2
3
2
mb
1
s
ym051
T1
G
T2
Table 3. Orderi ng information
Type number Package
Name Description Version
BTA208S-600B DPAK plastic single-ended surface-mounted package (DPAK); 3 leads
(one lead cropped) SOT428
Table 4. Limiting values
In accordance with the Absolute Maxi mum Rating System (IEC 60134).
Symbol Parameter Conditions Min Max Unit
VDRM repetitive peak off-state voltage - 600 V
IT(RMS) RMS on-state current full sine wave; Tmb 102 °C;
see Figure 1; see Figure 2; see Figure 3 -8A
ITSM non-repetitive peak on-state
current full sine wave; Tj(init) =2C;
tp= 20 ms; see Figure 4; see Figure 5 -65A
full sine wave; Tj(init) =2C;
tp=16.7ms -72A
I2t I
2t for fusing tp= 10 ms; sine-wave pulse - 21 A2s
dIT/dt rate of rise of on-state current IT=12A; I
G= 0.2 A; dIG/dt = 0.2 A/µs - 100 A/µs
IGM peak gate current - 2 A
VGM peak gate voltage - 5 V
PGM peak gate power - 5 W
PG(AV) average gate powe r over any 20 ms period - 0.5 W
Tstg storage temperature -40 150 °C
Tjjunction temperature - 125 °C
BTA208S-600B All information provided in this document is subject to legal disclaimers. © NXP B.V. 2011. All rights reserved.
Product data sheet Rev. 3 — 13 April 2011 3 of 13
NXP Semiconductors BTA208S-600B
3Q Hi-Com Triac
Fig 1. RMS on-state current as a function of heatsink
temperature; maximum values Fig 2. RMS on-state current as a function of surge
duration; maximum value
Fig 3. Total power dissipation as a function of RM S on-state current; maximum values
Tmb (°C)
50 150100050
003aaf581
4
6
2
8
10
IT(RMS)
0
102 °C
(A)
0
5
10
15
20
25
surge duration (s)
10
2
10110
1
003aaf617
I
T(RMS)
(A)
003aaf618
4
8
12
P
tot
0
I
T(RMS)
(A)
0 108462
2
6
10
(W)
101
105
109
117
121
125
113
T
mb(max)
(°C)
α = 180°
120°
90°
60°
30°
conduction
angle
(degrees)
form
factor
a
30
60
90
120
180
4
2.8
2.2
1.9
1.57
α
BTA208S-600B All information provided in this document is subject to legal disclaimers. © NXP B.V. 2011. All rights reserved.
Product data sheet Rev. 3 — 13 April 2011 4 of 13
NXP Semiconductors BTA208S-600B
3Q Hi-Com Triac
Fig 4. Non-repetitive peak on-state current as a function of the number of sinusoidal current cycles; maximum
values
Fig 5. Non-repetitive peak on-state current as a function of pulse width; maximum values
003aaa968
40
20
60
80
ITSM
0
number of cycles
1 103
102
10
(A)
I
TSM
t
I
T
T
j(init)
= 25 °C max
T
003aab121
tp (ms)
102102
101011
102
103
ITSM
(A)
10
(1)
I
TSM
t
I
T
T
j(init)
= 25 °C max
t
p
BTA208S-600B All information provided in this document is subject to legal disclaimers. © NXP B.V. 2011. All rights reserved.
Product data sheet Rev. 3 — 13 April 2011 5 of 13
NXP Semiconductors BTA208S-600B
3Q Hi-Com Triac
5. Thermal characteristics
Table 5. Thermal characteristics
Symbol Parameter Conditions Min Typ Max Unit
Rth(j-mb) thermal resistance
from junction to
mounting base
full cycle; see Figure 6 --2K/W
half cycle; see Figure 6 --2.4K/W
Rth(j-a) thermal resistance
from junction to
ambient
in free air; printed circuit board (FR4)
mounted -75-K/W
Fig 6. Transient thermal impedance from junction to mounting base as a function of pulse width
003aaf584
tp (s)
105110101
102
104103
1
101
10
Zth(j-mb)
(K/W)
102
unidirectional
bidirectional
tp
P
t
BTA208S-600B All information provided in this document is subject to legal disclaimers. © NXP B.V. 2011. All rights reserved.
Product data sheet Rev. 3 — 13 April 2011 6 of 13
NXP Semiconductors BTA208S-600B
3Q Hi-Com Triac
6. Characteristics
Table 6. Characteristics
Symbol Parameter Conditions Min Typ Max Unit
Static characteristics
IGT gate trigger current VD=12V; I
T= 0.1 A; T2+ G+;
Tj=2C; see Figure 7 2 1850mA
VD=12V; I
T= 0.1 A; T2+ G-;
Tj=2C; see Figure 7 2 2150mA
VD=12V; I
T= 0.1 A; T2- G-;
Tj=2C; see Figure 7 2 3450mA
ILlatching current VD=12V; I
G= 0.1 A; T2+ G+;
Tj=2C; see Figure 8 - 3160mA
VD=12V; I
G= 0.1 A; T2+ G-;
Tj=2C; see Figure 8 - 3490mA
VD=12V; I
G= 0.1 A; T2- G-;
Tj=2C; see Figure 8 - 3060mA
IHholding current VD=12V; T
j=2C; see Figure 9 - 3160mA
VTon-stat e vo ltage IT=10A; T
j= 25 °C; see Figure 10 - 1.3 1.65 V
VGT gate trigger voltage VD=12V; I
T= 0.1 A; Tj=2C;
see Figure 11 -0.71.5V
VD=400V; I
T= 0.1 A; Tj=12C;
see Figure 11 0.25 0.4 - V
IDoff-state current VD=600V; T
j= 125 °C - 0.1 0.5 mA
Dynamic character istics
dVD/dt rate of rise of off-state
voltage VDM =402V; T
j= 125 °C; exponential
waveform; gate open circuit 1000 4000 - V/µs
dIcom/dt rate of change of
commutating current VD=400V; T
j= 125 °C; IT(RMS) =8A;
dVcom/dt = 20 V/µs; gate open circuit;
snubberless condition; see Figure 12
-14-A/ms
tgt gate-controlled turn-on
time ITM =12A; V
D= 600 V; IG=0.1A;
dIG/dt = 5 A/µs -2s
BTA208S-600B All information provided in this document is subject to legal disclaimers. © NXP B.V. 2011. All rights reserved.
Product data sheet Rev. 3 — 13 April 2011 7 of 13
NXP Semiconductors BTA208S-600B
3Q Hi-Com Triac
(1) T2- G-
(2) T2+ G-
(3) T2+ G+
Fig 7. Normalized gate trigger current as a func tion of
junction temperature Fig 8. Normalized latching current as a function of
junction temperature
Vo = 1.264 V; Rs = 0.0378
(1) Tj = 125 °C; typical values
(2) Tj = 125 °C; maximum values
(3) Tj = 25 °C; maximum values
Fig 9. Normalized holding current as a function of
junction temperature Fig 10. On-state current as a function of on-state
voltage
Tj (°C)
50 150100050
003aac888
1
2
3
0
(1)
(2)
(3)
IGT
IGT(25°C)
Tj (°C)
50 150100050
001aab100
1
2
3
0
IL
IL(25°C)
Tj (°C)
50 150100050
001aab099
1
2
3
0
IH
IH(25°C)
003aaa971
VT (V)
0321
10
15
5
20
25
IT
(A)
0
(1) (2) (3)
BTA208S-600B All information provided in this document is subject to legal disclaimers. © NXP B.V. 2011. All rights reserved.
Product data sheet Rev. 3 — 13 April 2011 8 of 13
NXP Semiconductors BTA208S-600B
3Q Hi-Com Triac
Fig 11. Normalized gate trigger voltage as a function of
junction temperature Fig 12. Rate of rise of commutating current as a
function of junction temperature; typical values
Tj (°C)
50 150100050
001aab101
0.8
1.2
1.6
0.4
VGT
VGT(25°C)
001aac675
Tj (°C)
20 14010060
102
10
103
dlcom/dt
(A/ms)
1
BTA208S-600B All information provided in this document is subject to legal disclaimers. © NXP B.V. 2011. All rights reserved.
Product data sheet Rev. 3 — 13 April 2011 9 of 13
NXP Semiconductors BTA208S-600B
3Q Hi-Com Triac
7. Package outline
Fig 13. Package outline SOT428 (DPAK)
REFERENCES
OUTLINE
VERSION EUROPEAN
PROJECTION ISSUE DATE
IEC JEDEC JEITA
SOT428 SC-63
TO-252
SOT42
8
06-02-14
06-03-16
DIMENSIONS (mm are the original dimensions)
P
lastic single-ended surface-mounted package (DPAK); 3 leads (one lead cropped)
A
2
13
E1
D2
D1
HD
L
L1
L2
e1
e
mounting
base
wA
M
b
E
b2
b1c
A1
y
0 5 10 mm
scale
UNIT
mm 0.93
0.46
5.46
5.00
0.56
0.20
6.22
5.98
6.73
6.47
10.4
9.6
2.95
2.55
A1
2.38
2.22
Ab
2
1.1
0.9
b1e1
0.89
0.71
bcD
1
0.9
0.5
L2
Ee
2.285 4.57
4.0
D2
min
4.45
E1
min
0.5
L1
min
HDLw
0.2
y
max
0.2
A
BTA208S-600B All information provided in this document is subject to legal disclaimers. © NXP B.V. 2011. All rights reserved.
Product data sheet Rev. 3 — 13 April 2011 10 of 13
NXP Semiconductors BTA208S-600B
3Q Hi-Com Triac
8. Revision history
Table 7. Revision history
Document ID Release date Data sheet status Change notice Supersedes
BTA208S-600B v.3 20110413 Product data sheet - BTA208S_SER_B_2
Modifications: The format of this data sheet has been redesigned to comply with the new identity guidelines
of NXP Semiconductors.
Legal texts have been adapted to the new company name where appropriate.
Type number BTA208S-600B separated from data sheet BTA208S_SER_B_2.
BTA208S_SER_B_2
(9397 750 14861) 20050531 Product data sheet - BTA208S_SER_B_1
BTA208S-600B All information provided in this document is subject to legal disclaimers. © NXP B.V. 2011. All rights reserved.
Product data sheet Rev. 3 — 13 April 2011 11 of 13
NXP Semiconductors BTA208S-600B
3Q Hi-Com Triac
9. Legal information
9.1 Data sheet status
[1] Please consult the most recently issued document before initiating or completing a design.
[2] The term 'short data sheet' is explained in section "Definitions".
[3] The p r oduct status of device(s) de scribed in this document may have changed since this document was p ublished and ma y differ in case of multiple devices. The latest product
status information is available on the Internet at URL http://www.nxp.com.
9.2 Definitions
Draft — The document is a draft version only. The content is still under
internal review and subject to formal approval, which may result in
modifications or additions. NXP Semiconductors does not give any
representations or warranties as to the accuracy or completeness of
information included herein and shall have no liab ility for the consequences of
use of such information.
Short data sheetA short data sheet is an extract from a full data sheet
with the same product type number(s) and tit le. A short data sh eet is intended
for quick reference only and shou ld not b e relied u pon to cont ain det ailed and
full information. For detailed and full information see the relevant full data
sheet, which is available on request via the local NXP Semicond uctors sales
office. In case of any inconsistency or conf lict with the short data sheet, the
full data sheet shall pre va il.
Product specifica t ion The information and data provided in a Product
data sheet shall define the specification of the product as agreed between
NXP Semiconductors and its customer, unless NXP Semiconductors and
customer have explicitly agreed otherwise in writing. In no event however,
shall an agreement be valid in which the NXP Semiconductors product is
deemed to off er functions and qualities beyond those described in the
Product data sheet.
9.3 Disclaimers
Limited warranty and liability — Information in this d ocument is be lieved to
be accurate and reliable. However, NXP Semiconductors does not give any
representations or warrant ies, expressed or implied, as to the accuracy or
completeness of such information and shall have no liability for the
consequences of use of such information.
In no event shall NXP Semiconductors be liable for any indirect, incidental,
punitive, special or consequ ential damages (including - wit hout limitation - lost
profits, lost savings, business interruption, costs related to the removal or
replacement of any products or rework charges) whether or not such
damages are based on tort (including negligence), warranty, breach of
contract or any other legal theory.
Notwithstanding any damages that customer might incur for any reason
whatsoever, NXP Semiconductors’ aggregate and cumulat ive liability toward s
customer for the products described herein shall be limited in accordance
with the Terms and conditions of commercial sale of NXP Semiconductors.
Right to make changes — NXP Semiconductors reserves the right to make
changes to information published in this document, including without
limitation specifications and product descriptions, at any time and without
notice. This document supersedes and replaces all informa tion supplied prior
to the publication hereof .
Suitability for useNXP Semiconductors products are not designed,
authorized or warranted to be suitable for use in life support, life-critical or
safety-critical systems or equipment, nor in applications where failure or
malfunction of an NXP Semiconductors product can reasonably be expected
to result in perso nal injury, death or severe property or environmental
damage. NXP Semiconductors accepts no liab ility for inclusion and/or use of
NXP Semiconductors products in such equipment or applications and
therefore such inclusion and/or use is at the customer’s own risk.
Quick reference dataThe Quick reference data is an extract of the
product data given in the Limiting values and Characteristics sections of this
document, and as such is not complete, exhaustive or legally binding.
Applications — Applications that are described herein for any of these
products are for illustrative purposes only. NXP Semiconductors makes no
representation or warranty that such applications will be suitable for the
specified use without further testing or modification.
Customers are responsible for the design and ope ration of their applications
and products using NXP Semiconductors product s, and NXP Semiconductors
accepts no liability for any assistance with applications or customer product
design. It is customer’s sole responsibility to determine whether the NXP
Semiconductors product is suit able and fit for the custome r’s applications and
products planned, as well as fo r the planned application and use of
customer’s third party customer(s). Custo mers should provide appropriate
design and operating safeguards to minimize the risks associated with their
applications and products.
NXP Semiconductors does not accept any liabil i ty related to any default,
damage, costs or problem which is based on any weakness or default in the
customer’s applications or products, or the application or use by customer’s
third party custo m er(s). Customer is responsible for doing all necessar y
testing for the customer’s applications and products using NXP
Semiconductors products in order to avoid a default of the applications and
the products or of the application or use by customer’s third party
customer(s). NXP does not accept any liability in this respect.
Limiting values — Stress above one or more limiting values (as defined in
the Absolute Maximum Ratings System of IEC 60134) will cause permanent
damage to the device. Limiting values are stress rating s only and (proper)
operation of the device at these or any other conditions above those given in
the Recommended operating conditions section (if present) or the
Characteristics sections of this document is not warranted. Constant or
repeated exposure to limiting values will permanently and irreversibly affect
the quality and reliability of the device.
Terms and conditions of commercial sale — NXP Semiconductors
products are sold subject to the general terms and conditions of commercial
sale, as published at http://www.nxp.com/profile/terms, unless otherwise
agreed in a valid written individua l agreement. In case an individual
agreement is concluded only the ter m s and conditions of the respective
Document status [1] [2] Product status [3] Definition
Objective [short] data sheet Development This document contai ns data from the objective specification for product development.
Preliminary [shor t] data sheet Qualification This document contains data from the preliminary specification.
Product [short] data sheet Production This document contains the product specification.
BTA208S-600B All information provided in this document is subject to legal disclaimers. © NXP B.V. 2011. All rights reserved.
Product data sheet Rev. 3 — 13 April 2011 12 of 13
NXP Semiconductors BTA208S-600B
3Q Hi-Com Triac
agreement shall apply. NXP Semiconductors hereby expressly objects to
applying the customer’s general terms and conditions with regard to the
purchase of NXP Semiconductors products by customer.
No offer to sell or license — Nothing in this document ma y be interpret ed or
construed as an of fer to se ll product s that is op en for accept ance or the grant ,
conveyance or implication of any license under any copyrights, patents or
other industrial or intellectual property rights.
Export control — This document as well as the item(s) d escribed herein may
be subject to export control regulat i ons. Export might require a prior
authorization from national authorities.
Non-automotive qualified products — Unless this data sheet expressly
states that this specific NXP Semiconductors product is automotive qualified,
the product is not suitable for automotive use. It i s neit her qualif ied nor tested
in accordance with automotive testing or application requirements. NXP
Semiconductors accepts no liability for inclusion and/or use of
non-automotive qualified products in automotive equipment or applications.
In the event that customer uses the product for design-in and use in
automotive applications to automot ive specifications and standards, custome r
(a) shall use the product without NXP Semiconductors’ warranty of the
product for such automotive applications, use and specifications, and (b)
whenever customer uses the product for automotive applications beyond
NXP Semiconductors’ specifications such use shall be solely at customer’s
own risk, and (c) customer fully indemnifies NXP Semiconduct ors for an y
liability, damages or failed product claims resulting from custome r design and
use of the product for automotive applications beyond NXP Semiconductors’
standard warranty and NXP Semiconductors’ product specifications.
9.4 Trademarks
Notice: All referenced b rands, produc t names, service names and trademarks
are the property of their respective ow ners.
Adelante, Bitport, Bitsound, CoolFlux, CoReUse, DESFire, EZ-HV,
FabKey, GreenChip, HiPerSmart, HITAG, I²C-bus logo, ICODE, I-CODE,
ITEC, Labelution, MIFARE, MIFARE Plus, MIFAR E Ultralight, MoReUse,
QLPAK, Silicon Tuner, SiliconMAX, SmartXA, STARplug, TOPFET,
TrenchMOS, TriMedia and UCODE — are trademarks of NXP B.V.
HD Radio and HD Radio logo — are trademarks of iBiquity Digital
Corporation.
10. Contact information
For more information, please visit: http://www.nxp.com
For sales office addresses, please send an email to: salesaddresses@nxp.com
NXP Semiconductors BTA208S-600B
3Q Hi-Com Triac
© NXP B.V. 2011. All rights reserved.
For more information, please visit: http://www.nxp.com
For sales office addresses, please send an email to: salesaddresses@nxp.com
Date of release: 13 April 2011
Document identifier : B TA 2 08S-600B
Please be aware that important notices concerning this document and the product(s)
described herein, have been included in section ‘Legal information’.
11. Contents
1 Product profile . . . . . . . . . . . . . . . . . . . . . . . . . . .1
1.1 General description . . . . . . . . . . . . . . . . . . . . . .1
1.2 Features and benefits. . . . . . . . . . . . . . . . . . . . .1
1.3 Applications . . . . . . . . . . . . . . . . . . . . . . . . . . . .1
1.4 Quick reference data . . . . . . . . . . . . . . . . . . . . .1
2 Pinning information. . . . . . . . . . . . . . . . . . . . . . .2
3 Ordering information. . . . . . . . . . . . . . . . . . . . . .2
4 Limiting values. . . . . . . . . . . . . . . . . . . . . . . . . . .2
5 Thermal characteristics . . . . . . . . . . . . . . . . . . .5
6 Characteristics. . . . . . . . . . . . . . . . . . . . . . . . . . .6
7 Package outline . . . . . . . . . . . . . . . . . . . . . . . . . .9
8 Revision history. . . . . . . . . . . . . . . . . . . . . . . . .10
9 Legal information. . . . . . . . . . . . . . . . . . . . . . . .11
9.1 Data sheet status . . . . . . . . . . . . . . . . . . . . . . .11
9.2 Definitions. . . . . . . . . . . . . . . . . . . . . . . . . . . . .11
9.3 Disclaimers. . . . . . . . . . . . . . . . . . . . . . . . . . . .11
9.4 Trademarks. . . . . . . . . . . . . . . . . . . . . . . . . . . .12
10 Contact information. . . . . . . . . . . . . . . . . . . . . .1 2